Metal oxide memristors: Switching phenomena in van der Waals nanostructures

本项目旨在整合两个最近研究的现象：忆阻器（电阻存储器）和平面材料。它旨在采用原子级薄的平面材料用于忆阻器，从而实现高性能电阻存储器件。物理和环境的影响，管理的忆阻特性，这是最重要的了解电阻存储器的性质，将进行调查。在产生突破性知识的同时，该项目的关键成果将为基于平面货车德瓦尔斯纳米结构的新型存储器件奠定基础。这一突破将有助于实现可持续的忆阻器技术。

This project aims to integrate two recently researched phenomena: memristors (resistive memory) and planar materials. It aims to adopt atomically thin, planar materials for memristors enabling the realisation of high performance resistive memory devices. The physical and environmental effects that govern the memristive properties, which are of utmost importance in understanding resistive memory nature, will be investigated. While generating breakthrough knowledge, the key outcomes of this project will lay the foundation for a novel class of memory devices based on planar van der Waals nanostructures. Such a breakthrough will contribute to the realisation of sustainable memristor technology.