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Development of oxidation-free light-emitting material of silicon microparticles that have many fine trenches

Development of oxidation-free light-emitting material of silicon microparticles that have many fine trenches
具有许多微细沟槽的硅微粒无氧化发光材料的开发
批准号:
17H04962
负责人:
Inasawa Susumu
金额:
$15.39万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (A)
财政年份:
2017
资助国家:
日本
项目状态:
已结题
起止时间:
2017-04-01 至 2020-03-31

项目摘要

项目成果

Inasawa Susumu的其他基金

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DOI: 10.1016/j.jcrysgro.2019.05.009
发表时间: 2019-08
期刊: Journal of Crystal Growth
影响因子: 1.8
作者: [S. Inasawa;Kai Inoue]
通讯作者: S. Inasawa;Kai Inoue
Formation of jointed silicon wires/nanowires using dissolution and re-crystalization of silicon in molten zinc droplets.
Mat of silicon nanowires as a highly efficient thermoelectric material
Retardation in oxidation and quenching of photoluminescence from trenched silicon micropartices