Research on band-to-band tunneling via discrete dopants near pn junctions in Si nanodevices

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The purpose of this research was to elucidate effects of discrete dopants in tunneling currents flowing in Si nanodevices. Exploration of tunneling via dopants in transistors is fundamental for such analysis, for which we studied silicon-on-insulator devices doped with phosphorus (P). As a main target, we also fabricated and studied pn/pin diodes with narrow depletion layers.We reported room-temperature single-electron tunneling in highly-doped SOI transistors, in which multiple-dopant quantum dots can be formed.At low concentrations, single-electron tunneling via single dopants has been analyzed experimentally and theoretically.We also reported steps in band-to-band tunneling current in nanoscale tunnel diodes, ascribed to energy states in the depletion layer.