Effect of energy filtering due to donor atoms near source edge in Si nano-transistors
Effect of energy filtering due to donor atoms near source edge in Si nano-transistors
批准号:
26820127
负责人:
Moraru Daniel
金额:
$2.58万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2014
资助国家:
日本
项目状态:
已结题
起止时间:
2014-04-01 至 2016-03-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Effect of Individual Dopants in Esaki Tunneling Diodes
江崎隧道二极管中各个掺杂剂的影响
DOI:
--
发表时间:
2015
期刊:
影响因子:
--
作者:
[Hoang Nhat Tan, Daniel Moraru, Ryosuke Unno, Anak Agung Ngurah Gde Sapteka, Sri Purwiyanti,Le The Anh, Muruganathan Manoharan,Takeshi Mizuno, Hiroshi Mizuta, Djoko Hartanto, Michiharu Tabe]
通讯作者:
Michiharu Tabe
低濃度リンドープによるドーパント原子MOSFET
低浓度磷掺杂的掺杂原子MOSFET
DOI:
--
发表时间:
2015
期刊:
影响因子:
--
作者:
[Yuuki Takasu, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe]
通讯作者:
Michiharu Tabe
Individuality of Dopants in Silicon Nano-pn Junctions
硅纳米 pn 结中掺杂剂的个性
DOI:
10.5755/j01.ms.20.2.6312
发表时间:
2014
期刊:
MATERIALS SCIENCE MEDZIAGOTYRA
影响因子:
--
作者:
[Daniel Moraru, Sri Purwiyanti, Roland Nowak, Takeshi Mizuno, Arief Udhiarto, Djoko Hartanto, Ryszard Jablonski, Michiharu Tabe]
通讯作者:
Michiharu Tabe
KPFM Observation of Quantum Dots Induced by Clustered Donors in Selectively-Doped SOI-FETs
KPFM 观察选择性掺杂 SOI-FET 中簇状供体诱导的量子点
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[Krzysztof Tyszka, Arup Samanta, Daniel Moraru, Yohei Kuzuya, Le The Anh, Takeshi Mizuno, Ryszard Jablonski, Hiroshi Mizuta, Michiharu Tabe]
通讯作者:
Michiharu Tabe
Kelvin Probe Force Microscope Observation of Donors' Arrangement in Si Transistor Channel
硅晶体管沟道中施主排列的开尔文探针力显微镜观察
DOI:
10.4028/www.scientific.net/amr.1117.82
发表时间:
2015
期刊:
Advanced Materials Research
影响因子:
--
作者:
[Krzysztof Tyszka, Daniel Moraru, Takeshi Mizuno, Ryszard Jablonski, Michiharu Tabe]
通讯作者:
Michiharu Tabe
共 23 条
Research on band-to-band tunneling via discrete dopants near pn junctions in Si nanodevices
-
批准号:22K04216
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.66万
-
财政年份:2022
-
负责人:Moraru Daniel
-
依托单位:
Study of two-dimensional Si Esaki diodes at ultra-high doping with semimetal behavior
-
批准号:19K04529
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.75万
-
财政年份:2019
-
负责人:Moraru Daniel
-
依托单位:
海外基金