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Exploring the functionality of Al-catalyzed Si nanowires

Exploring the functionality of Al-catalyzed Si nanowires
探索铝催化硅纳米线的功能
批准号:
22K04885
负责人:
J. Wipakorn
金额:
$2.66万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2022
资助国家:
日本
项目状态:
未结题
起止时间:
2022-04-01 至 2025-03-31

项目摘要

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中文摘要
翻译
研究了用于高迁移率场效应管(HEMT)和光伏电池的气-液-固三相法Al催化硅纳米线(NWS)。通过简单的异地生长条件成功地解决了Al催化剂快速氧化的主要挑战,从而有可能扩大工艺规模,同时防止由于催化剂污染而导致的深能级陷阱的形成。铝催化的SiNW生长在100微米和60微米厚的纸薄抛光和刻蚀的Si(111)晶片上,具有最大限度地减少界面缺陷和光吸收损失的能力。与用金刚石浆料抛光的标准方法相比,深度湿法刻蚀是制备薄硅片的一种简单技术。优化了掺锰CsPbCl3钙钛矿纳米晶与CsPbCl3钙钛矿纳米晶混合纳米结构制备具有同质结结构、提高功率转换效率的薄硅纳米晶太阳电池的工艺条件,并利用Al催化剂成功地实现了Si/Ge核壳纳米晶异质结的空穴气体积累。设计了p型硅和本征Ge异质结的II类能带排列,用于在Ge沟道中诱导空穴-气体积累,以抑制杂质和表面散射。Al催化SiNW具有垂直生长可控、表面光滑、Al掺杂自动化等独特特性,为垂直SiNW HEMT器件的应用提供了重要的优势。
英文摘要
Al-catalyzed Si nanowires (NWs) formed by vapor-liquid-solid growth for high mobility field-effect transistor (HEMT) and photovoltaic cell applications were parallelly investigated. Successfully addressing the major challenge of rapid Al catalyst oxidation by ex-situ and uncomplicated growth conditions allows for the potential to scale up the process while preventing the formation of deep-level traps resulting from catalyst contamination.Al-catalyzed SiNWs grown on paper-thin polished and etched Si(111) wafers of 100 um- and 60 um-thick with high proficiency for minimizing interfacial defects and light absorption loss has been accomplished. Deep wet etching was observed as a simple technique for thin Si wafer preparation compared to the standard method of polishing by diamond slurry. Fabrication of thin Si NW solar cells with homojunction structure toward enhanced power conversion efficiency by hybrid nanostructures with Mn-doped CsPbCl3 perovskite nanocrystals using a simple drop-casting method has been optimized.Hole-gas accumulation of Si/Ge core-shell NW heterostructures using Al-catalyst for core SiNW synthesis was successfully demonstrated. Type-II band alignment of p-type Si and intrinsic Ge heterojunction has been designed for induced hole-gas accumulation in the Ge channel to suppress impurity and surface scattering. The unique characteristics of controllable vertical growth and smooth surface with automated Al doping in Al-catalyzed SiNWs grant major advantages for the application of vertical SiNW-based HEMT devices.
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Energy transfer performances of nanocrystal quantum-dots for Si nanowire-based photovoltaic applications
用于基于硅纳米线的光伏应用的纳米晶体量子点的能量传输性能
DOI: --
发表时间: 2022
期刊:
影响因子: --
作者: [Wipakorn Jevasuwan, Mohammed Abdelhameed, Mostafa F. A. Abdelbar, Naoki Fukata]
通讯作者: Naoki Fukata
Hybrid Nanostructures of Al-Catalyzed Si Nanowires and Mn-doped Perovskite CsPbCl3 Nanocrystals for Thin Si Nanowire-based Photovoltaic cells
用于薄硅纳米线光伏电池的铝催化硅纳米线和锰掺杂钙钛矿 CsPbCl3 纳米晶体的混合纳米结构
DOI: --
发表时间: 2022
期刊:
影响因子: --
作者: [Wipakorn Jevasuwan, Bern Yu Jeco-Espaldon, Mostafa Abdelbar, Qinqiang Zhang, Mohammed Abdelhameed, Naoki Fukata]
通讯作者: Naoki Fukata
Energy Transfer Performances in Hybrid Nanostructures Using Si Nanowires and Nanocrystal Quantum-Dots for Photovoltaic Applications
用于光伏应用的使用硅纳米线和纳米晶体量子点的混合纳米结构的能量传输性能
DOI: --
发表时间: 2022
期刊:
影响因子: --
作者: [田中敬佑, 南畑孝介, 若林里衣, 神谷典穂, 後藤雅宏, K. Fukutani, Wipakorn Jevasuwan and Naoki Fukata]
通讯作者: Wipakorn Jevasuwan and Naoki Fukata
Al-Catalyzed Si Nanowire Formation on Pre-Etched and Post-Polished Thin Si Substrates for Photovoltaic Application
用于光伏应用的预蚀刻和后抛光薄硅基板上铝催化硅纳米线的形成
DOI: --
发表时间: 2022
期刊:
影响因子: --
作者: [関戸竜也, 麻田俊雄, 小関史朗, Wipakorn Jevasuwan and Naoki Fukata]
通讯作者: Wipakorn Jevasuwan and Naoki Fukata
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