Exploring the functionality of Al-catalyzed Si nanowires

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Al-catalyzed Si nanowires (NWs) formed by vapor-liquid-solid growth for high mobility field-effect transistor (HEMT) and photovoltaic cell applications were parallelly investigated. Successfully addressing the major challenge of rapid Al catalyst oxidation by ex-situ and uncomplicated growth conditions allows for the potential to scale up the process while preventing the formation of deep-level traps resulting from catalyst contamination.Al-catalyzed SiNWs grown on paper-thin polished and etched Si(111) wafers of 100 um- and 60 um-thick with high proficiency for minimizing interfacial defects and light absorption loss has been accomplished. Deep wet etching was observed as a simple technique for thin Si wafer preparation compared to the standard method of polishing by diamond slurry. Fabrication of thin Si NW solar cells with homojunction structure toward enhanced power conversion efficiency by hybrid nanostructures with Mn-doped CsPbCl3 perovskite nanocrystals using a simple drop-casting method has been optimized.Hole-gas accumulation of Si/Ge core-shell NW heterostructures using Al-catalyst for core SiNW synthesis was successfully demonstrated. Type-II band alignment of p-type Si and intrinsic Ge heterojunction has been designed for induced hole-gas accumulation in the Ge channel to suppress impurity and surface scattering. The unique characteristics of controllable vertical growth and smooth surface with automated Al doping in Al-catalyzed SiNWs grant major advantages for the application of vertical SiNW-based HEMT devices.