Exploring the functionality of Al-catalyzed Si nanowires

探索铝催化硅纳米线的功能

• 批准号: 22K04885
• 负责人: J. Wipakorn
• 金额: $ 2.66万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2022
• 资助国家: 日本
• 起止时间: 2022-04-01 至 2025-03-31
• 项目状态: 未结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22K04885/
• 关键词: Nanowire; Nanostructure; Vapor-liquid-solid; CVD; Aluminum; Silicon; Nanowires; Germanium; Heterojunction

Al-catalyzed Si nanowires (NWs) formed by vapor-liquid-solid growth for high mobility field-effect transistor (HEMT) and photovoltaic cell applications were parallelly investigated. Successfully addressing the major challenge of rapid Al catalyst oxidation by ex-situ and uncomplicated growth conditions allows for the potential to scale up the process while preventing the formation of deep-level traps resulting from catalyst contamination.Al-catalyzed SiNWs grown on paper-thin polished and etched Si(111) wafers of 100 um- and 60 um-thick with high proficiency for minimizing interfacial defects and light absorption loss has been accomplished. Deep wet etching was observed as a simple technique for thin Si wafer preparation compared to the standard method of polishing by diamond slurry. Fabrication of thin Si NW solar cells with homojunction structure toward enhanced power conversion efficiency by hybrid nanostructures with Mn-doped CsPbCl3 perovskite nanocrystals using a simple drop-casting method has been optimized.Hole-gas accumulation of Si/Ge core-shell NW heterostructures using Al-catalyst for core SiNW synthesis was successfully demonstrated. Type-II band alignment of p-type Si and intrinsic Ge heterojunction has been designed for induced hole-gas accumulation in the Ge channel to suppress impurity and surface scattering. The unique characteristics of controllable vertical growth and smooth surface with automated Al doping in Al-catalyzed SiNWs grant major advantages for the application of vertical SiNW-based HEMT devices.

研究了气-液-固生长制备的铝催化硅纳米线（NWs）在高迁移率场效应晶体管（HEMT）和光伏电池中的应用。通过非原位和简单的生长条件，成功解决了Al催化剂快速氧化的主要挑战，从而有可能扩大该过程的规模，同时防止因催化剂污染而形成深层陷阱。al催化SiNWs生长在100 um和60 um厚度的纸张薄的抛光和蚀刻Si（111）晶圆上，具有最小化界面缺陷和光吸收损失的能力。与金刚石浆料抛光的标准方法相比，深湿蚀刻是一种简单的硅薄晶片制备技术。采用简单的滴铸法优化了以掺锰CsPbCl3钙钛矿纳米晶为杂化纳米结构制备具有均匀结结构的薄硅NW太阳能电池，以提高功率转换效率。用al催化剂成功地证明了硅/锗核壳NW异质结构的空穴-气富集。设计了p型Si和本征Ge异质结的ii型带对准，以诱导Ge通道中的空穴气体积聚，从而抑制杂质和表面散射。Al催化sinw的垂直生长可控和表面光滑的独特特性为垂直sinw基HEMT器件的应用提供了主要优势。

项目成果

Energy transfer performances of nanocrystal quantum-dots for Si nanowire-based photovoltaic applications

用于基于硅纳米线的光伏应用的纳米晶体量子点的能量传输性能

• 发表时间: 2022
• 作者: Wipakorn Jevasuwan;Mohammed Abdelhameed;Mostafa F. A. Abdelbar;Naoki Fukata
• 通讯作者: Naoki Fukata

Hybrid Nanostructures of Al-Catalyzed Si Nanowires and Mn-doped Perovskite CsPbCl3 Nanocrystals for Thin Si Nanowire-based Photovoltaic cells

用于薄硅纳米线光伏电池的铝催化硅纳米线和锰掺杂钙钛矿 CsPbCl3 纳米晶体的混合纳米结构

• 发表时间: 2022
• 作者: Wipakorn Jevasuwan;Bern Yu Jeco-Espaldon;Mostafa Abdelbar;Qinqiang Zhang;Mohammed Abdelhameed;Naoki Fukata
• 通讯作者: Naoki Fukata

Energy Transfer Performances in Hybrid Nanostructures Using Si Nanowires and Nanocrystal Quantum-Dots for Photovoltaic Applications

用于光伏应用的使用硅纳米线和纳米晶体量子点的混合纳米结构的能量传输性能

• 发表时间: 2022
• 作者: 田中敬佑;南畑孝介;若林里衣;神谷典穂;後藤雅宏;K. Fukutani;Wipakorn Jevasuwan and Naoki Fukata
• 通讯作者: Wipakorn Jevasuwan and Naoki Fukata

Al-Catalyzed Si Nanowire Formation on Pre-Etched and Post-Polished Thin Si Substrates for Photovoltaic Application

用于光伏应用的预蚀刻和后抛光薄硅基板上铝催化硅纳米线的形成

• 发表时间: 2022
• 作者: 関戸竜也;麻田俊雄;小関史朗;Wipakorn Jevasuwan and Naoki Fukata
• 通讯作者: Wipakorn Jevasuwan and Naoki Fukata