Spin-dependent tunneling in oxidic heterostructures (B06)

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We plan to fabricate type-III broken-gap oxidic heterostructures by using pulsed laser deposition. Because of a tunnel coupling between the (energetically higher) p-type valence band of one material and the (energetically lower) s-type conduction band of the other material the existence of a bulk band gap and topologically protected edge states is expected, whose magnetotransport and tunnel resistance will be experimentally investigated. An accompanying theoretical study will take into account the influence of interaction and disorder effects on dissipative edge transport and on possible exciton condensation.