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ゲート周辺ダメージ層除去プラズマレス低速平滑エッチング技術開発とメカニズム解明

无等离子体低速平滑蚀刻技术的开发及栅极周围损伤层去除机理的阐明

基本信息

批准号：
26706022
负责人：
田嶋聡美
金额：
$ 13.15万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Young Scientists (A)
财政年份：
2014
资助国家：
日本
起止时间：
2014-04-01 至 2016-03-31
项目状态：
已结题

项目摘要

本研究の目的は次世代LSIデバイスの性能を左右する5-20 nmのゲート周辺プラズマエッチング後のダメージ層除去を行うための新規低速平滑ケミカルエッチング技術を開発し,表面反応の機序を解明することである.平成27年度の実績は論文発表1件,学会等発表17件（うち招待講演10件）,社会貢献3件, 図書3件である。平成26年度は6 nm/minの低速Siエッチングができることが分かったが, 再現性を得ることが課題であった.FTIRによるチャンバー内の副生成物と昇温脱離ガス分析法（TDS）を用いたSi表面の吸着分子の解析結果をまとめたところ,エッチングを阻害するN2O4のみならずN2O2も気相中に存在することが分かった.さらに試料固定の際の真空グリースや洗浄の際に利用したHCl等の不純物も残留していることが分かった.H27年はエッチングの再現性と面内均一性を高めるため赤外分光法(FTIR)チャンバー内の副生成物計測を元にチャンバー温度管理の厳密化と排気ライン改善を行った.また装置新建屋の移設後の再起動と老朽化していたFTIRの修繕を行った.実験設備移設工事期間中（H26.2月-H27.11月）は当該エッチング手法を次世代パワーデバイスのSiC,ナノカーボンセンサー表面処理, 異種材料接着等への応用に向けて一般企業の設備を借用し若手研究者と共に表面モデリングの課題抽出を行った.本研究のこれまでの成果をひらめきときめき☆サイエンス他合計3回の講義録にまとめて社会貢献を行った.平成26-27年度研究期間の実績は論文発表2件(うち国際共著1件）,学会等発表33件（うち招待講演15件）, 社会貢献7件, 特許出願2件, 図書3件である.期間中4か国の研究者と連携し研究活動を行った.研究推進をご支援下さった関係各位に厚く御礼申し上げる.

The purpose of this study is to improve the performance of the next-generation LSI system. 5-20 nm cycles are required to improve the performance of low-speed, low-speed, high-speed, high-speed, low-speed, high-speed, high- In Pingcheng in 27, there were 1 list of articles, 17 pieces of academic tables (10 pieces of entertainment), 3 pieces of social gifts and 3 pieces of gifts. In Pingcheng, 6 nm/min, low-speed Si, low-speed, high-speed, low-speed, high-speed, low-speed Si, low-speed, high-speed, low-speed, high-speed, low-speed Si, low-speed, high-speed, low-speed, low-speed, high-speed, low-speed Si, low-speed, low-speed, high-speed, low-speed, low-speed, high-speed, low-speed Si, low-speed, low-speed, low-speed There is a gap in the phase of N2O4 block, N2O2 block, and so on. In this paper, the material is fixed, the vacuum is fixed, and the residue is separated by the use of materials such as HCl. In H27, there is a high degree of intra-plane uniformity (FTIR). The by-product calculation is based on temperature management, temperature management, densification and improvement of the line. After the installation of the new house and the relocation of the equipment, the aging equipment will be activated, and the FTIR will be repaired. During the period of equipment relocation (H26.2-H27.11), the next generation of equipment transfer equipment during the construction period (H26.2-H27.11), during the period of equipment relocation (H26.2-H27.11), during the period of equipment relocation (H26.2-H27.11), during the period of equipment relocation (H26.2-H27.11), during the period of equipment relocation (H26.2-H27.11), during the period of equipment relocation (H26.2-H27.11), during the period of equipment relocation (H26.2-H27.11), the equipment was moved to the next generation of equipment equipment during H26.2-H27.11. The results of this study show that he has made a total of 3 times of social contributions. During the research period of Pingcheng 26-27, there were 2 papers (1 international co-author), 33 academic tables (15 entertainment performances), 7 social gifts, 2 special offers and 3 awards. During this period, researchers in four countries have linked up with research activities to conduct research activities. The study promotes the support of the government to help you to apply for the gift.