Thermoelectric conversion improvement of Co-free skutterudites through a multiscale approach

本文尝试制备了（Sm,Nd）y(FexNi1-x)4Sb12双填充晶圆体。由于填料数量少，我们尝试与热那亚大学合作制备前驱体Sm0.15Nd0.5Sb0.8，以减少稀土量的误差。不幸的是，在制备了方角石并通过XRD和SEM对其进行分析后，我们发现前驱体被用于合成的坩埚污染了Ta。因此，等待一些Nd的购买，他成功地制备了三种掺杂Sn的晶圆石样品：Smy(FexNi1-x) 4sb11.5 sn0.5，这三种样品是按照最近研究该体系交叉的合作者的方向制备的：X= 0.45作为n型半导体；X = 0.55为n-p交叉半导体；X = 0.65为p型半导体。然后，样品被磨碎、筛选并通过SPS（500℃，7分钟）致密化。T室塞贝克很有希望（约-90 microV/K），样品将很快发送给NIMS的合作者，以测量热导率和功率因数。

An attempt of preparing the double filled skutterudites of composition (Sm,Nd)y(FexNi1-x)4Sb12 was made. Due to the small quantity of fillers, we tried, in collaboration with Genova University, to prepare a precursor Sm0.15Nd0.5Sb0.8 to reduce the error in the amount of rare earths. Unfortunately, after preparing the skutterudites and analyzing it via XRD and SEM, we found out that the precursor was contaminated with Ta, coming from the crucible used for the synthesis. So, waiting for the purchase of some Nd, the fellow successfully prepared three samples of skutterudite doped with Sn: Smy(FexNi1-x)4Sb11.5Sn0.5The three samples were prepared following the directions of collaborators which have recently studied the crossover of the system: X= 0.45 as n-type semiconductor; X = 0.55 as n-p crossover semiconductor; X = 0.65 as p-type semiconductor.Samples were then ground, sieved and densified by SPS (500 ℃ for 7 minutes)Room T Seebeck is promising (about -90 microV/K) and the samples will be sent soon to collaborators at NIMS to measure the thermal conductivity and power factor.