Thermoelectric conversion improvement of Co-free skutterudites through a multiscale approach

尝试制备了（Sm，Nd）y（FexNi（1-x））4Sb（12）双填充方钴矿。由于填料量少，我们尝试与热那亚大学合作，制备前驱体Sm 0.15 Nd 0.5 Sb 0.8，以减少稀土量的误差。不幸的是，在制备方钴矿并通过XRD和SEM对其进行分析后，我们发现前体被来自用于合成的坩埚的Ta污染。于是，等待购买一些Nd，这位老乡成功制备了三个掺Sn的方钴矿样品：Smy（FexNi_（1-x））_4Sb_（11.5）Sn_（0.5）三种样品是按照最近研究该系统交叉的合作者的方向制备的：X= 0.45为n型半导体，X = 0.55为n-p交叉半导体，X = 0.55为n型半导体。然后将样品研磨、筛分并通过SPS（500 ℃，7分钟）致密化。Seebeck室很有前途（约-90 microV/K），样品将很快被送到NIMS的合作者那里，以测量热导率和功率因数。

An attempt of preparing the double filled skutterudites of composition (Sm,Nd)y(FexNi1-x)4Sb12 was made. Due to the small quantity of fillers, we tried, in collaboration with Genova University, to prepare a precursor Sm0.15Nd0.5Sb0.8 to reduce the error in the amount of rare earths. Unfortunately, after preparing the skutterudites and analyzing it via XRD and SEM, we found out that the precursor was contaminated with Ta, coming from the crucible used for the synthesis. So, waiting for the purchase of some Nd, the fellow successfully prepared three samples of skutterudite doped with Sn: Smy(FexNi1-x)4Sb11.5Sn0.5The three samples were prepared following the directions of collaborators which have recently studied the crossover of the system: X= 0.45 as n-type semiconductor; X = 0.55 as n-p crossover semiconductor; X = 0.65 as p-type semiconductor.Samples were then ground, sieved and densified by SPS (500 ℃ for 7 minutes)Room T Seebeck is promising (about -90 microV/K) and the samples will be sent soon to collaborators at NIMS to measure the thermal conductivity and power factor.