Thermoelectric conversion improvement of Co-free skutterudites through a multiscale approach

对制备(Sm，ND)y(FexNi1-x)4Sb12双填充方铅矿进行了尝试。由于填充剂的数量较少，我们与热诺瓦大学合作，尝试制备了Sm0.15Nd0.5Sb0.8前驱体，以减少稀土含量的误差。不幸的是，在制备了方解石并通过X射线衍射和扫描电子显微镜对其进行分析后，我们发现前驱体被Ta污染了，这来自于合成所用的坩埚。因此，在等待购买一些钕的情况下，这位同事成功地制备了三个掺锡的方锌矿样品：Smy(FexNi1-x)4Sb11.5Sn0.5。这三个样品是按照最近研究系统交叉的合作者的指示制备的：X=0.45为n型半导体，X=0.55为n-p交叉半导体，X=0.55为n-p交叉半导体。样品用SPS(500℃，7分钟)研磨、筛分和致密。T Seebeck房间很有希望(约-90微V/K)，样品将很快被送到NIMS的合作者那里测量热导率和功率因数。

An attempt of preparing the double filled skutterudites of composition (Sm,Nd)y(FexNi1-x)4Sb12 was made. Due to the small quantity of fillers, we tried, in collaboration with Genova University, to prepare a precursor Sm0.15Nd0.5Sb0.8 to reduce the error in the amount of rare earths. Unfortunately, after preparing the skutterudites and analyzing it via XRD and SEM, we found out that the precursor was contaminated with Ta, coming from the crucible used for the synthesis. So, waiting for the purchase of some Nd, the fellow successfully prepared three samples of skutterudite doped with Sn: Smy(FexNi1-x)4Sb11.5Sn0.5The three samples were prepared following the directions of collaborators which have recently studied the crossover of the system: X= 0.45 as n-type semiconductor; X = 0.55 as n-p crossover semiconductor; X = 0.65 as p-type semiconductor.Samples were then ground, sieved and densified by SPS (500 ℃ for 7 minutes)Room T Seebeck is promising (about -90 microV/K) and the samples will be sent soon to collaborators at NIMS to measure the thermal conductivity and power factor.