Study on GaN-based blue vertical cavity surface emitting laser on Si

硅基GaN基蓝色垂直腔面发射激光器研究

• 批准号: 09650049
• 负责人: EGAWA Takashi
• 金额: $ 2.18万
• 依托单位: Nagoya Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650049/
• 关键词: Vertical cavity surface emitting laser; distributed Bragg reflector; MOCVD; an; Multi quantum well; LED; Si; Cavity; 歪超格子; クラック; 反射率; AlGaN; InGaNダブルヘテロ構造; 自由励起子; 束縛励起子; 面発光レーザー; n型窒化ガリウム; P型窒化ガリウム

GaN, AlN and their alloys have direct transition type band gap structure and have attracted much attention for optical devices in the blue-ultraviolet region. GaN-based edge emitting lasers have been extensively studies and have achieved room temperature continuous wave operation. Recently, GaN-based vertical cavity surface emitting lasers (VCSELs) with a distributed Bragg reflector (DBR) have attracted much interest for various optical applications due to the fabrication of a smooth mirror without a cleavage technique. The DBR is also effective in improving the output power of LED. Thus, the DBR plays an important rule to fabricate high performance optical devices such as LED and VCSEL. In this study, the use of the GaN/AlィイD20.27ィエD2GィイD20.73ィエD2 DBR as a bottom mirror has improved the characteristics of InGaN MQW LED sapphire. Moreover, the reflectivity as high as 98% has been obtained by the use of the strained layer superlattice (SLS) beneath the DBR structure. The InGaN MQW LED grown on the 15 pairs of DBR with a reflectivity of 75% was fabricated for the first time to the best of our knowledge. The output power of 120μW at 435 nm was about 1.5 times as large as that of the conventional LED. The DBR is very promising for the fabrication of high performance GaN-based LED and VCSEL.

GaN、AlN及其合金具有直接跃迁型带隙结构，在蓝紫外光器件方面受到广泛关注。GaN基边发射激光器已得到广泛研究，并已实现室温连续波工作。近年来，GaN基垂直腔面发射激光器（VCSEL）与分布式布拉格反射器（DBR）的各种光学应用吸引了很大的兴趣，由于没有分裂技术的光滑镜的制造。DBR在提高LED的输出功率方面也是有效的。因此，DBR在制造高性能的光学器件如LED和VCSEL方面起着重要的作用。在本研究中，使用GaN/Al异质结D20.27异质结D2 G异质结D20.73异质结D2 DBR作为底镜，改善了InGaN MQW LED蓝宝石的特性。此外，通过在DBR结构下使用应变层超晶格（SLS），获得了高达98%的反射率。首次在15对DBR上生长出反射率为75%的InGaN多量子阱LED。在435 nm处输出功率为120μW，约为传统LED的1.5倍。DBR在高性能GaN基LED和VCSEL的制造中具有很大的应用前景。

项目成果

G.Y.Zhao et al.: "Energy-gap narrowing in a current injected InGaN/AlGaN surface light emitting diode" Appl. Phys. Lett.71・17. 2424-2426 (1997)

G.Y.Zhao 等：“电流注入 InGaN/AlGaN 表面发光二极管中的能隙变窄”Appl.71・17（1997）。

H. Ishikawa et al.: "GaN on Si Substrate with AlGaN/AlN Intermediate Layer"Jpn. J. Appl. Phys.. Vol. 38 No. 2. L492-L494 (1999)

H. Ishikawa 等人：“具有 AlGaN/AlN 中间层的 Si 衬底上的 GaN”Jpn。

T. Egawa et al.: "Characteristics of a GaN Metal Semiconductor Fiel-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys.. Vol. 38, No. 4B. 2630-2633 (1999)

T. Ekawa 等人：“通过金属有机化学气相沉积在蓝宝石衬底上生长的 GaN 金属半导体场效应晶体管的特性”Jpn。

T.Egawa et al.: "Investigations of SiO_2/n-GaN and SiN_4/n-GaN insulator-semiconductor interfaces with low interface state density" Appl.Phys.Lett.73・6. 809-811 (1998)

T.Ekawa等人：“具有低界面态密度的SiO_2/n-GaN和SiN_4/n-GaN绝缘体-半导体界面的研究”Appl.Phys.Lett.73・6（1998）。

G.Yu et al.: "Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire" Jpn. J. Appl. Phys.36・8A. L1029-L1031 (1997)

G.Yu等：“蓝宝石上氮化镓光学各向异性的偏振反射光谱和光谱椭圆光度测定”Jpn.Appl.36·8A（1997）