Study on GaN-based normally-off device on Si substrate using selective area growth

选择性区域生长硅衬底上氮化镓基常断器件的研究

• 批准号: 23360154
• 负责人: EGAWA Takashi
• 金额: $ 12.48万
• 依托单位: Nagoya Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360154/
• 关键词: 有機金属気相成長法; GaN; 選択再成長; ノーマリオフ; HEMT; MOCVD; 有機金属気相成長; AlGaN/GaN; マイグレーション; 暗点欠陥密度; CL; 成長速度; 表面平坦性

GaN-based HEMTs have attractive for high power switching applications. Normally-off operation was one of major requirements for AlGaN/GaN HEMTs. However, realization of normally-off operation with high drain cuurent is difficult due to the existence of two-dimensional electron gas in heterointerface induced piezo and spontaneous polarization charges. Selective area growth (SAG) technique is one of solutions for normally-off operation.In this study, I report normally-off AlGaN/GaN HEMTs with SAG of an AlGaN layer and deposition of an Al2O3 film on an AlGaN/GaN heterostructure designed to be completely depleted. Adopting AlGaN regrowth in a selective area and Al2O3 film deposition for the access region of the HEMT, the normall-off operation of AlGaN/GaN HEMT was demonstrated. The device showed the drain current density of 160 mA/mm and the threshold voltgae of 0.4 V.

GaN基高电子迁移率晶体管（HEMT）在大功率开关领域具有广泛的应用前景。 常关断工作是AlGaN/GaN HEMT的主要要求之一。 然而，由于异质界面中二维电子气的存在，导致压电和自发极化电荷的产生，使得实现高漏电流的常关工作变得困难。 选择性区域生长（Selective Area Growth，SAG）技术是实现常关型器件的一种解决方案，在本论文中，作者报道了在AlGaN/GaN异质结构上沉积Al_2O_3薄膜，并采用SAG技术制备出常关型AlGaN/GaN HEMT。 采用AlGaN选择区再生长和Al 2 O3薄膜淀积作为HEMT的接入区，实现了AlGaN/GaN HEMT的常关工作。 器件的漏电流密度为160 mA/mm，阈值电压为0.4V。

项目成果

Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers

• DOI: 10.1063/1.4733359
• 发表时间: 2012-07
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: J. Freedsman;T. Kubo;T. Egawa

Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si

• DOI: 10.1109/iedm.2012.6479112
• 发表时间: 2012-12
• 期刊: 2012 International Electron Devices Meeting
• 作者: T. Egawa

High Drain Current Density E-Mode Al_2O_3/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit (4×10^<8> V^<2>Ω^<-1>cm^<-2>)

硅基高漏极电流密度 E 模式 Al_2O_3/AlGaN/GaN MOS-HEMT，具有增强型功率器件品质因数 (4×10^<8> V^<2>Ω^<-1>cm^<-2 >)

• 发表时间: 2013
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: J. J. Freedsman;T. Kubo;T. Egawa
• 通讯作者: T. Egawa

Deep Pits and Their Influence on the Device Performance for MOCVD Grown AlGaN/GaN HEMTS on Si Substrate

Si 衬底上 MOCVD 生长 AlGaN/GaN HEMTS 的深坑及其对器件性能的影响

• 发表时间: 2011
• 作者: S. L. Selvaraj;A;Watanabe;T. Egawa
• 通讯作者: T. Egawa

Electroluminescence under the gate region using AlGaN/GaN HEMT with a transparent gate electrode

使用具有透明栅电极的 AlGaN/GaN HEMT 在栅极区域下进行电致发光

• 发表时间: 2013
• 作者: T. Narita;Y. Fujimoto;A. Wakejima;T. Egawa
• 通讯作者: T. Egawa