Development of nano-scale characterization technology for semicondutors and devices with scanning capacitance microscope

扫描电容显微镜半导体及器件纳米级表征技术的发展

• 批准号: 09555093
• 负责人: YAO Takafumi
• 金额: $ 8.58万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555093/
• 关键词: Scanning Capacitance Microscopy; Nano-scale characterization of electrical properties; Atomic Force Microscopy; Scanning tunneling microscopy; MOS structures; Charge storage; Memory deivces

A novel scanning capacitance microscoe has been developed with a W cantilever, in which a new optical feed-back system is invented. By considerably suppressing noise due to stray capacitance, high sensitive detection of capacitance variation has become possible, which enables a capacitance as low as 1 aF.The lateral resolution for capacitance measurements is as good as 2Onm. These features are the best among SCaMs which enables direct CV measurements. It is possible to measure dC/dV simultaneously. We have achieved the followings with this novel SCaM : (1) To clarify the physical meaning of dC/dV signals. We have indicated that the dC/dV signal is so dependent on the bias conditions and modulation voltage that its interpretation requires the CV measurements. (2) It is demonstrated that the SCaM can be used to characterize real MOS devices with submicron gate length. With a help of scanning capacitance image of the device, a dC/dV technique can be properly used to image even a slight local change in capacitance. (3) Local CV characteristics of a lateral p-n junction has been measured, while its characteristics have been simulated using a device simulator. It has been demonstrated that the combination of the SCaM with device simulation enable to characterize local electric properties which have hitherto been performed.

研制了一种新型的W型悬臂梁扫描电容显微镜，其中采用了一种新的光学反馈系统。通过显著抑制杂散电容引起的噪声，电容变化的高灵敏度检测成为可能，这使得电容低至1aF。电容测量的横向分辨率高达20 nm。这些功能是SCAM中最好的，可以直接进行CV测量。可以同时测量dC/dV。利用这种新的SCaM，我们取得了以下成果：（1）阐明了dC/dV信号的物理意义。我们已经指出，DC/dV信号是如此依赖于偏置条件和调制电压，其解释需要CV测量。(2)结果表明，SCaM可以用来表征亚微米栅长的真实的MOS器件。借助于扫描器件的电容图像，可以适当地使用dC/dV技术来成像，即使是电容的微小局部变化。(3)测量了横向p-n结的局部CV特性，并利用器件模拟器对其特性进行了模拟。已经证明，SCaM与器件模拟的组合能够表征迄今为止已经执行的局部电特性。

项目成果

H.Tomiye: "Investigation of charge trapping in a SiO_2/Si System with a scanning capacitance microscope" Jpn.J.Appl.Phys.37 Pt.1. 3812-3815 (1998)

H.Tomiye：“用扫描电容显微镜研究 SiO_2/Si 系统中的电荷捕获”Jpn.J.Appl.Phys.37 Pt.1。

H.Tomiye: "Scanning capacitance microscope study of SiO_2/Si interface modified by change injection" Applied Physics A. (印刷中). (1998)

H. Tomiye：“通过变化注入改性的 SiO_2/Si 界面的扫描电容显微镜研究”Applied Chemistry A.（出版中）。

H.Tomiye: "“Investigation of charge trapping in a SiO_2/Si System with a scanning capacitance microscope"" Jpn.J.Appl.Phys.37. 3812-3815 (1998)

H. Tomiye：“用扫描电容显微镜研究 SiO_2/Si 系统中的电荷捕获”Jpn.J.Appl.Phys.37 (1998)。

H.Tomiye: "Scanning capacitance microscope study of a SiO_2/Si interface modified by charge injection" Appl.Phys.A 66. 431-434 (1998)

H.Tomiye：“通过电荷注入改性的 SiO_2/Si 界面的扫描电容显微镜研究”Appl.Phys.A 66. 431-434 (1998)

H.Tomiye: "“Characterization of SiO_2/Si with a novel scanning capacitance microscope combined with an atomic force microscope"" Appl.Surf.Sci.117/118. 166-170 (1997)

H.Tomiye：“使用新型扫描电容显微镜与原子力显微镜表征 SiO_2/Si”，Appl.Surf.Sci.117/118 (1997)。