Application of chemical lift-off process to the fabrication of vertical ultra-violet LEDs

近来，蓝色LED和白色LED已经进入商业市场，并广泛应用于我们的日常生活中。为了将LED技术应用于普通照明，对发射紫外光的高亮度LED的需求很高。为此，我们提出了应用化学剥离（CLO）技术来分离蓝宝石衬底后生长的紫外LED结构来制造垂直的LED结构，我们已经展示了385 nm波段的高亮度紫外LED的制作通过CLO技术。通过调节InGaN/GaN量子阱有源层中In的组分，可以实现发光波长的调谐。通过采用合适的AlGaN包层结构，大大提高了发射强度。这些成果可应用于深紫外发光二极管的制作。

Recently, blue LEDs and white LEDs have been already in the commercial market and are widely used in our daily life. In order to apply the LED technology to general lighting, high-brightness LEDs emitting uv light are highly demanded. To this end, we propose to apply the chemical lift-off (CLO)technique to detach sapphire substrates after growing uv LED structures to fabricate vertical LED structures.We have demonstrated the fabrication of 385-nm band high-brightness uv LEDs by means of CLO technique. The emitting wavelength can be tuned by adjusting the composition of In in the active InGaN/GaN QW layers. The emission intensity has been greatly improved by adapting proper AlGaN cladding structures. These achievements can be applied to the fabrication of deep uv LEDs.