Application of chemical lift-off process to the fabrication of vertical ultra-violet LEDs

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Recently, blue LEDs and white LEDs have been already in the commercial market and are widely used in our daily life. In order to apply the LED technology to general lighting, high-brightness LEDs emitting uv light are highly demanded. To this end, we propose to apply the chemical lift-off (CLO)technique to detach sapphire substrates after growing uv LED structures to fabricate vertical LED structures.We have demonstrated the fabrication of 385-nm band high-brightness uv LEDs by means of CLO technique. The emitting wavelength can be tuned by adjusting the composition of In in the active InGaN/GaN QW layers. The emission intensity has been greatly improved by adapting proper AlGaN cladding structures. These achievements can be applied to the fabrication of deep uv LEDs.