Development of atomic-scale materials processing utilizing electron-beam induced selective chemical reaction

利用电子束诱导选择性化学反应开发原子级材料加工

• 批准号: 03402024
• 负责人: YAO Takafumi
• 金额: $ 18.3万
• 依托单位: Tohoku University (1994)Hiroshima University (1991-1993)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03402024/
• 关键词: STM; atom; molecule manipulation; selective chemical reaction; semiconductor surface; molecule adsorption; materials processing; 走査トンネル顕微鏡; 分子吸着過程; 電界蒸発; 近接効果; 走査プローブ顕微鏡; 単原子操作; 単分子操作; 吸着分子; ハロゲンガス; レストアトム; アドアトム; 電子的励起; ナノテクノロジー; 表面反応

The main results obtained in this project are summarized as follows : (1) The initial stages of the adsorption of Al2Cl6 molecules are elucidated, in which rest atoms play an important role in the adsorption process. An A12C16 molecule decomposes on adsorbtion, resulting in the preferential adsorption of Cl and AlClx molecules onto the center adatom. Based on these findings, the desorptin of adsorbed single Cl atom and AlClx molecule is demonstrated. We succeeded also in the displacemnet of the molecule and the decomposition of the molucule, resulting in the adsorption of an Al atom. (2) Local atomic structures of HF-treated Si (111) surfaces are elucidated using STM.Based on this study, Ga nano dots are deposited onto (C2H5) 3Ga-adsorbed HF-treated Si (111) surfaces by appling a voltage pulse between the tip and the sample surface. The underlying mechansism is the electric-field enhanced decompositin of the adsorbed (C2H5) 3Ga molecule below the tip. (3) Local atomic structures of Al-adsorbed Si (111) surfaces and atomistic processes during Si solid phase epitaxy are elucidated.

本课题取得的主要成果概括如下： (1)阐明了Al2Cl6分子吸附的初始阶段，其中其余原子在吸附过程中发挥着重要作用。 A12C16 分子在吸附时分解，导致 Cl 和 AlClx 分子优先吸附到中心吸附原子上。基于这些发现，证明了吸附的单个 Cl 原子和 AlClx 分子的解吸作用。我们还成功地实现了分子的置换和分子的分解，从而导致铝原子的吸附。 (2)利用STM阐明了HF处理的Si(111)表面的局部原子结构。基于这项研究，通过在尖端和样品表面之间施加电压脉冲，Ga纳米点沉积到吸附了(C2H5)3Ga的HF处理的Si(111)表面上。基本机制是尖端下方吸附的 (C2H5) 3Ga 分子的电场增强分解。 (3)阐明了吸附Al的Si(111)表面的局部原子结构和Si固相外延过程中的原子过程。

项目成果

Karsuya Takaoka: "Al-√<3>x√<3> domain structure on Si (111) -7x7 observed by scanning tunneling microscopy" PHYSICAL REVIEW. B48. 5657-5659 (1993)

Karsuya Takaoka：“通过扫描隧道显微镜观察 Si (111) -7x7 上的 Al-√<3>x√<3> 域结构”B48 (1993)。

S.Inoue: "Selective Imaging of Metal Atoms in the Semiconducting Layeted Compound MoS2 by STM/STS" Mat.Res.Soc.Symp.Proc.332. 293-297 (1994)

S.Inoue：“通过 STM/STS 对半导体层状化合物 MoS2 中的金属原子进行选择性成像”Mat.Res.Soc.Symp.Proc.332。

X.Li: "Surface Physics" Gordon and beach science publishers, 232 (1992)

X.Li：《表面物理学》戈登和比奇科学出版社，232（1992）

Tomohiro KONISHI,Katsuhiro UESUGI,Katsuya TAKAOKA,Seiji KAWANO,Masamichi YOSHIMURA and Takafumi YAO: "Characterization of HF-treated Si (111) surfaces" Japanese Journal of Applied Physics. 32. 3131-3134 (1993)

Tomohiro KONISHI、Katsuhiro UESUGI、Katsuya TAKAOKA、Seiji KAWANO、Masamichi YOSHIMURA 和 Takafumi YAO：“HF 处理的 Si (111) 表面的表征”日本应用物理学杂志。

K.Uesugi, T.Takiguchi, M.Yoshimura, and T.Yao: "Scanning tunneling microscopy study of the reaction of AlCl_3 with the Si (111) surface" J.Vac.Sci.Technol.B12. 2008-2011 (1994)

K.Uesugi、T.Takiguchi、M.Yoshimura 和 T.Yao：“AlCl_3 与 Si (111) 表面反应的扫描隧道显微镜研究”J.Vac.Sci.Technol.B12。