Room-temperature device application of one- dimensional-exciton photo-emission in quantum wires

一维激子光发射在量子线中的室温器件应用

• 批准号: 09555094
• 负责人: AKIYAMA Hidefumi
• 金额: $ 7.42万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555094/
• 关键词: Quantum Wire; 1D exciton; room temperature; MBE; characterization; confinement energy; 励起子; 温度依存性; 顕微分光; レーザー; 横方向閉じ込め; 束縛エネルギー; 発光デバイス

We have investigated the one-dimensional (1D) exciton effect from low up to room temperature and preventing factors in the physics and material point of view in order to achieve 1D GaAs quantum wire (QWR) photo-emission devices. For this purpose, we have developed microscopic photoluminescence (PL) imaging and spectroscopy system with high resolution and efficiency which is stable against temperature variation.Introduction of In GaAs material to T-shaped quantum wires was tried to stabilize the ID excitons. It turned out that the lateral confinement energy of QWR was increased to 35meV, which is about two times larger than 18meV observed for the corresponding GaAs T-QWRs. The temperature dependence of PL have shown that excitons are stable up to 150K in the sample. Introduction of AIAs barrier will further stabilize the ID excitons to make PL at room temperature.The major difficulty of T-QWRs lies in the MBE growth on the cleaved (110) crystal surface. We have investigated (110) MBE-grown surface of GaAs of atomic force microscopy and our microscopic PL imaging and spectroscopy system. The micrometer-scale large terrace formation inherent to (110) surface and the resulted modulated electronic states were observed, which contributes to the exciton diffusion and thermal activation processes at various temperatures.Ridge QWR lasers with low controllability but with inherently strong confinement have been also designed, fabricated, and characterized. They did lase at room temperature, on which we studied microscopic origin, temperature dependence, and uniformity.

为了实现一维量子线(QWR)光电发射器件，我们从物理和材料的角度研究了从低温到室温的一维激子效应及其防止因素。为此，我们研制了对温度变化稳定的高分辨率、高效率的显微光致发光成像和光谱系统，并尝试在T型量子线中引入In-GaAs材料来稳定ID激子。结果表明，QWR的侧向限制能增加到35 meV，约为相应的GaAsT-QWR的18 meV的两倍。光致发光的温度依赖关系表明，样品中的激子在150K以下是稳定的。AIAS势垒的引入将进一步稳定ID激子，使其在室温下发光。T-QWR的主要困难在于解理的(110)晶面上的分子束外延生长。我们用原子力显微镜和我们的显微光致发光成像和光谱系统研究了(110)分子束外延生长的GaAs表面。观察到了(110)表面固有的微米级大阶地的形成和由此产生的调制电子态，这有助于激子在不同温度下的扩散和热激活过程。还设计、制造和表征了具有低可控性但固有的强限制的脊型QWR激光器。他们在室温下进行激光，在此基础上，我们研究了微观起源、温度依赖性和均匀性。

项目成果

M. Yoshita,: "Solid immersion photoluminescence microscopy on carrier diffusion and drift in facet-growth GaAs quantum wells."Appl. Phys. Leff. 73. 2965-2967 (1998)

M. Yoshita，：“固体浸没光致发光显微镜研究小面生长 GaAs 量子阱中的载流子扩散和漂移。”

M. Baba: "Application of solid immersion lens to submicron resolution imaging of nano-scale quantum wells"Opt. Rev. 6. 257 (1999)

M. Baba：“固体浸没透镜在纳米级量子阱亚微米分辨率成像中的应用”Opt。

R. Sasagawa: "Enhancement of intersubband transition energies in GaAs quantum wells by Si delta-doping of high concentration"Appl. Phys. Lett.. 72. 719-721 (1998)

R. Sasakawa：“通过高浓度 Si δ 掺杂增强 GaAs 量子阱中的子带间跃迁能量”Appl。

M. Yoshita,: "Carrier transfer in facet-growth GaAs quantum wells studied by solid immersion photoluminescence microscopy,"J. Phys. Conf. Ser. No162/Compound Semicond vectors. 162. 143-148 (1999)

M. Yoshita，：“通过固体浸没光致发光显微镜研究刻面生长 GaAs 量子阱中的载流子转移”，J.

H.Akiyama: "Speetroseopyofone-dimensional excitons in GaAs quautum wires" Material Science and Engineering B. 48. 126-130 (1997)

H.Akiyama：“GaAs量子线中的一维激子的光谱”材料科学与工程B.48.126-130（1997）