Room-temperature device application of one- dimensional-exciton photo-emission in quantum wires
Room-temperature device application of one- dimensional-exciton photo-emission in quantum wires
批准号:
09555094
负责人:
AKIYAMA Hidefumi
金额:
$7.42万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1999
中文摘要
为了实现一维砷化镓量子线(QWR)光发射器件,我们从物理和材料的角度研究了低温到室温的一维激子效应和阻止因素。为此,我们开发了高分辨率、高效率、对温度变化稳定的显微光致发光(PL)成像和光谱系统。尝试在t型量子线中引入砷化镓材料来稳定ID激子。结果表明,QWR的侧限能提高到35meV,比相应的GaAs t -QWR的18meV约大2倍。PL的温度依赖性表明激子在样品中高达150K时是稳定的。AIAs势垒的引入将进一步稳定ID激子,从而在室温下制备PL。t - qws的主要难点在于MBE在裂解(110)晶体表面的生长。我们用原子力显微镜研究了(110)mbe生长的GaAs表面和我们的显微PL成像和光谱系统。观察到(110)表面固有的微米尺度的大阶地形成和由此产生的调制电子态,这有助于激子在不同温度下的扩散和热激活过程。具有低可控性但固有强约束的脊型量子水阱激光器也被设计、制造和表征。它们确实在室温下激光,在此基础上我们研究了微观起源、温度依赖性和均匀性。
英文摘要
We have investigated the one-dimensional (1D) exciton effect from low up to room temperature and preventing factors in the physics and material point of view in order to achieve 1D GaAs quantum wire (QWR) photo-emission devices. For this purpose, we have developed microscopic photoluminescence (PL) imaging and spectroscopy system with high resolution and efficiency which is stable against temperature variation.Introduction of In GaAs material to T-shaped quantum wires was tried to stabilize the ID excitons. It turned out that the lateral confinement energy of QWR was increased to 35meV, which is about two times larger than 18meV observed for the corresponding GaAs T-QWRs. The temperature dependence of PL have shown that excitons are stable up to 150K in the sample. Introduction of AIAs barrier will further stabilize the ID excitons to make PL at room temperature.The major difficulty of T-QWRs lies in the MBE growth on the cleaved (110) crystal surface. We have investigated (110) MBE-grown surface of GaAs of atomic force microscopy and our microscopic PL imaging and spectroscopy system. The micrometer-scale large terrace formation inherent to (110) surface and the resulted modulated electronic states were observed, which contributes to the exciton diffusion and thermal activation processes at various temperatures.Ridge QWR lasers with low controllability but with inherently strong confinement have been also designed, fabricated, and characterized. They did lase at room temperature, on which we studied microscopic origin, temperature dependence, and uniformity.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
M. Yoshita,: "Solid immersion photoluminescence microscopy on carrier diffusion and drift in facet-growth GaAs quantum wells."Appl. Phys. Leff. 73. 2965-2967 (1998)
M. Yoshita,:“固体浸没光致发光显微镜研究小面生长 GaAs 量子阱中的载流子扩散和漂移。”
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
M. Baba: "Application of solid immersion lens to submicron resolution imaging of nano-scale quantum wells"Opt. Rev. 6. 257 (1999)
M. Baba:“固体浸没透镜在纳米级量子阱亚微米分辨率成像中的应用”Opt。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
R. Sasagawa: "Enhancement of intersubband transition energies in GaAs quantum wells by Si delta-doping of high concentration"Appl. Phys. Lett.. 72. 719-721 (1998)
R. Sasakawa:“通过高浓度 Si δ 掺杂增强 GaAs 量子阱中的子带间跃迁能量”Appl。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
M. Yoshita,: "Carrier transfer in facet-growth GaAs quantum wells studied by solid immersion photoluminescence microscopy,"J. Phys. Conf. Ser. No162/Compound Semicond vectors. 162. 143-148 (1999)
M. Yoshita,:“通过固体浸没光致发光显微镜研究刻面生长 GaAs 量子阱中的载流子转移”,J.
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
H.Akiyama: "Speetroseopyofone-dimensional excitons in GaAs quautum wires" Material Science and Engineering B. 48. 126-130 (1997)
H.Akiyama:“GaAs量子线中的一维激子的光谱”材料科学与工程B.48.126-130(1997)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 58 条
Fundamental physics of ultra-short-pulse generation in clean quantum-structure semiconductor lasers
-
批准号:15H03968
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$10.65万
-
财政年份:2015
-
负责人:AKIYAMA Hidefumi
-
依托单位:
Development of practical theoretical calculation of semiconductor-laser gain including many-body Coulomb interactions and its experimental verifications with high-quality quantum-wire lasers
-
批准号:23360135
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.65万
-
财政年份:2011
-
负责人:AKIYAMA Hidefumi
-
依托单位:
Fabrication of low-threshold quantum-wire lasers and study on their lasing properties and physics
-
批准号:20360135
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.06万
-
财政年份:2008
-
负责人:AKIYAMA Hidefumi
-
依托单位:
Current-injection operation of quantum-wire lasers and verification of low threshold currents
-
批准号:16360148
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.6万
-
财政年份:2004
-
负责人:AKIYAMA Hidefumi
-
依托单位:
Lasing mechanisms in high-quality T-shaped quantum-wire lasers
-
批准号:14350159
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$10.69万
-
财政年份:2002
-
负责人:AKIYAMA Hidefumi
-
依托单位: