Development of practical theoretical calculation of semiconductor-laser gain including many-body Coulomb interactions and its experimental verifications with high-quality quantum-wire lasers

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Optical gain in semiconductor lasers has practically been calculated with band theories based on free electron approximations. In this study, we introduced mean-field approximations for many-body Coulomb interactions among carriers in two-dimensional quantum well system and one-dimensional quantum wire system. We developed practical calculation codes, and quantitatively calculated mode gain of the lasers by determining calculation parameters on the basis of the k-p perturbation theory. We also developed simplified calculation method by neglecting the wave-number dependence of screening for the Coulomb interactions. In the experiments, we precisely measured carrier density dependence of the gain spectrum in a 3 period T-shaped quantum-wire-laser sample with high quality. By comparing the peak gain values and quantitative gain spectra obtained with the theories and experiments, we verified the usefulness of the developed theories.