Current-injection operation of quantum-wire lasers and verification of low threshold currents

量子线激光器的电流注入操作和低阈值电流的验证

• 批准号: 16360148
• 负责人: AKIYAMA Hidefumi
• 金额: $ 9.6万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16360148/
• 关键词: current injection; GaAs; quantum wires; T-shaped; laser; MBE; one dimension; doping; GaAs; 電子正孔系

We achieved single-mode lasing in two-types of T-shaped-quantum-wire (T-wire) lasers using current-injection via perpendicular and parallel p-and n-doping layers. These lasers had cavity length of 0.5 mm and cavity mirror facets coated by high-reflectivity Au/SiO2 thin films. The T-wire lasers are formed by the cleaved-edge overgrowth method, and laser optical waveguide is located at a corner on each wafer, for which we cannot use conventional photo-lithography technique. In addition, singular p-n junction geometry of T-wire lasers with non-plainer structures cannot be designed with conventional one-dimensional Poisson equation tools. Therefore, we designed perpendicular and parallel doping profiles in T-wire lasers by try-and-errors, developed manual semiconductor processing methods, and devised our homemade optical characterization tools.In a T-wire laser with 15-array of T-wires and perpendicular p-and n-doping layers, we observed single-mode lasing in a wide temperature range of 5- … More 110K, which is the highest lasing temperature in current-injection T-wire lasers. Laser performance becomes optimum at 100 K, where we obtained threshold current of 2.1mA and differential quantum efficiency of 0.9%. In a T-wire laser with 20-array of T-wires and parallel p-and n-doping layers, on the other hand, we observed single-mode lasing in a temperature range of 30-70K. Laser performance becomes optimum at 30 K, where we obtained the lowest threshold current of 0.27 mA and high differential quantum efficiency of 12%. This threshold current value of 0.27 mA corresponds to 14 μ A per single T-wire. A theoretical value estimated by Yariv's analysis method and wire length of 0.5 mm, temperature of 30 K, and carrier lifetime of 0.4 ns is about 10 μ A per single T-wire. Our present result is very close to this estimation, and in principle confirms the predicted low threshold current in quantum wire lasers. Further detailed characterizations of luminescence and lasing spectra, current-voltage characteristics, current-light-output characteristics, threshold currents, differential quantum efficiencies as well as their temperature dependences have been achieved on our current-injection T-wire lasers. Less

通过垂直和平行的p型和n型掺杂层的电流注入，我们实现了两种类型的T形量子线（T线）激光器的单模激射。这些激光器具有0.5 mm的腔长和由高反射率Au/SiO2薄膜涂覆的腔镜面。T型线激光器采用劈边生长法，激光光波导位于晶片的一个角上，这是传统光刻技术无法实现的。此外，奇异的p-n结的几何形状的T-线激光器与非平面结构不能设计与传统的一维泊松方程工具。因此，我们通过反复试验设计了垂直和平行掺杂的T线激光器，发展了手工半导体加工方法，并设计了自制的光学表征工具，在15排T线和垂直p和n掺杂层的T线激光器中，观察到了5- 10 ℃宽温度范围内的单模激光。 ...更多信息 110 K，这是电流注入T线激光器的最高激光温度。在100 K时激光性能达到最佳，阈值电流为2.1mA，微分量子效率为0.9%。另一方面，在具有20个T线阵列和平行的p型和n型掺杂层的T线激光器中，我们在30- 70 K的温度范围内观察到单模激光。激光性能在30 K时达到最佳，获得了最低阈值电流0.27 mA和12%的高微分量子效率。该阈值电流值为0.27 mA，相当于每根T形线14 μ A。根据Yariv的分析方法，在导线长度为0.5mm，温度为30 K，载流子寿命为0.4ns的条件下，理论计算值约为10 μ A/单根T导线。我们目前的结果非常接近这一估计，并在原则上证实了量子线激光器的预测低阈值电流。在电流注入型T线激光器上，获得了发光和激光光谱、电流-电压特性、电流-光输出特性、阈值电流、微分量子效率以及它们的温度依赖性的进一步详细表征。少

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• 发表时间: 2005
• 期刊: 分光研究 54
• 作者: 秋山英文;安東頼子;丹羽一樹;近江谷克裕;久保田英博
• 通讯作者: 久保田英博

Strong photoabsorption by a single-quantum wire in waveguide-transmission spectroscopy

• DOI: 10.1063/1.1947902
• 发表时间: 2005-06-13
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Takahashi, Y;Hayamizu, Y;West, KW
• 通讯作者: West, KW

Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys

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• 发表时间: 2006
• 期刊: Phys. Stat. Sol. (c)3
• 作者: H. Yaguchi;T. Morioke;T. Aoki;H. Shimizu;Y. Hijikata;S. Yoshida;M. Yoshita;H. Akiyama;N. Usami;D. Aoki;K. Onabe
• 通讯作者: K. Onabe

Bioluminescence quantum-yield measurements with modern semiconductor photo-detectors

使用现代半导体光电探测器进行生物发光量子产率测量

• 发表时间: 2005
• 期刊: Recent Progress of Bio/Chemiluminescence and Fluorescence Analysis in Photosynthesis(eds. by Naohisa Wada and Mamoru Mimuro)(Research Signpost, Kerala, India, 2005)
• 作者: Yoriko Ando;Hidefumi Akiyama;Kazuki Niwa;Hidehiro Kubota;Yoshihiro Ohmiya
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Control of type-I and type-II band alignments in AllnAs/AlGaAs self-assembled quantum dots by changing AlGaAs compositions

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• 发表时间: 2004
• 期刊: Physica E 21
• 作者: K.Ohdaira;H.Murata;S.Koh;M.Baba;H.Akiyama;R.Ito;Y.Shiraki
• 通讯作者: Y.Shiraki