PREPARATION OF DIELECTRIC THICK FILMS BY INTERFACIAL POLYMERIZATION METHOD AND APPLICATION TO ACTUATORS FOR MICRO-MACHINES

本研究的目的是准备用表面上的硅芯片来引导钛-铅钛（PZT）厚电影，并对其压电材料进行评估。以下是研究过的：1）建立界面聚合过程以准备PZT厚薄膜上的硅薄膜; 2）设置Mach-Zehnder类型的干涉仪来测量PZT厚薄膜。界面聚合技术是这样的非aquous alkoxide precursor solution is poured on a container中的水表面和凝胶薄膜形成在两个immiscible liquids之间的界面。The precursor solution was prepared by adding PZT alkoxide solution， PZT powders coated with 2 wt % Pb_“预先解决方案在水面上吐出，PZT凝胶电影在界面上成型。”gel film was gently placed on the Pt/IrO-D22-D2/SiO-D22-D2/Si substrate by draManagement the water from the container。在950 ° C的10分钟内干燥后，电影在10分钟内干燥。PZT厚电影（厚度=23微米）可以通过这种单一涂层过程制造。PGO涂覆的粉末对降低中间温度有很大的影响。PZT thick films showed remnant polarization （P-D2r-D2） of 33. 1/cm-D12-D1 and relative dielectric constant of 771 respectively。PZT thick films was measured with the system of Mach-Zhender interferometer。PZT厚电影的轮询电压为250伏，30分钟，R.T.。PZT厚膜的压电常数为225 pm/V，在200赫兹至3千赫之间。为PZT厚膜开发了图案技术，以建立基础技术，用于利用这些厚膜作为制造器，用于微型机器

The purpose of this study was to prepare lead titanate-lead zirconate (PZT) thick films on silicon wafer by interfacial and to evaluate their piezoelectric properties. The followings were studied : 1) establishment of interfacial polymerization process to prepare PZT thick films on silicon wafer, 2) setup of Mach-Zehnder type interferometer to measure piezoelectric strains of PZT thick films.Interfacial polymerization technique is that the non-aqueous alkoxide precursor solution is poured on the surface of water in a container and a gel film is formed at the interface between the two immiscible liquids. The precursor solution was prepared by adding PZT alkoxide solution, PZT powders coated with 2wt% PbィイD25ィエD2GeィイD23ィエD2OィイD211ィエD2(PGO), and a dispersion stabilizer (SPAN80) into hexane solvent. The precursor solution was poured on the water and the PZT gel film was formed at the interface. The gel film was gently placed on the Pt/IrOィイD22ィエD2/SiOィイD22ィエD2/Si substrate by draining the water from the container. After drying the film was sintered at 950℃ for 10 min. PZT thick films (thickness=23μm) could be fabricated by this single coating process. The PGO-coated powder was effective to reduce the sintering temperature. The PZT thick films showed remnant polarization (PィイD2rィエD2) of 33.1 μ/cmィイD12ィエD1 and relative dielectric constant of 771respectively. Piezoelectric construct (dィイD233ィエD2) of PZT thick films was measured with the system of Mach-Zhender interferometer. Poling voltage of PZT thick film was 250V for 30min at R.T. Piezoelectric constant of PZT thick films was 225 pm/V between 200Hz to 3 kHz.Patterning technique was developed for the PZT thick films to establish a fundamental technology for utilizing theses thick films as actuators used in micro-machines