PREPARATION OF DIELECTRIC THICK FILMS BY INTERFACIAL POLYMERIZATION METHOD AND APPLICATION TO ACTUATORS FOR MICRO-MACHINES

界面聚合法制备介电厚膜及其在微型机械执行器中的应用

• 批准号: 09555189
• 负责人: YAMANE Masayuki
• 金额: $ 8.58万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555189/
• 关键词: piezoelectric material; PZT; actuator; thick film; laser interferometer; 強誘電体; 圧電アクチュエーター; ゾル-ゲル法; 圧電セラミックス

The purpose of this study was to prepare lead titanate-lead zirconate (PZT) thick films on silicon wafer by interfacial and to evaluate their piezoelectric properties. The followings were studied : 1) establishment of interfacial polymerization process to prepare PZT thick films on silicon wafer, 2) setup of Mach-Zehnder type interferometer to measure piezoelectric strains of PZT thick films.Interfacial polymerization technique is that the non-aqueous alkoxide precursor solution is poured on the surface of water in a container and a gel film is formed at the interface between the two immiscible liquids. The precursor solution was prepared by adding PZT alkoxide solution, PZT powders coated with 2wt% PbィイD25ィエD2GeィイD23ィエD2OィイD211ィエD2(PGO), and a dispersion stabilizer (SPAN80) into hexane solvent. The precursor solution was poured on the water and the PZT gel film was formed at the interface. The gel film was gently placed on the Pt/IrOィイD22ィエD2/SiOィイD22ィエD2/Si substrate by draining the water from the container. After drying the film was sintered at 950℃ for 10 min. PZT thick films (thickness=23μm) could be fabricated by this single coating process. The PGO-coated powder was effective to reduce the sintering temperature. The PZT thick films showed remnant polarization (PィイD2rィエD2) of 33.1 μ/cmィイD12ィエD1 and relative dielectric constant of 771respectively. Piezoelectric construct (dィイD233ィエD2) of PZT thick films was measured with the system of Mach-Zhender interferometer. Poling voltage of PZT thick film was 250V for 30min at R.T. Piezoelectric constant of PZT thick films was 225 pm/V between 200Hz to 3 kHz.Patterning technique was developed for the PZT thick films to establish a fundamental technology for utilizing theses thick films as actuators used in micro-machines

采用界面法在硅基片上制备钛酸铅-锆酸铅（PZT）厚膜，并对其压电性能进行评价。研究了以下内容：1）建立了在硅片上制备PZT厚膜的界面聚合工艺，2）建立了测量PZT厚膜压电应变的Mach-Zehnder型干涉仪，界面聚合技术是将非水的醇盐前驱体溶液倾倒在容器中的水表面，在两种不互溶液体的界面处形成凝胶膜。通过将PZT醇盐溶液、涂覆有2wt%Pb掺杂D25掺杂D2 Ge掺杂D23掺杂D2 O掺杂D211掺杂D2（PGO）的PZT粉末和分散稳定剂（SPAN 80）添加到己烷溶剂中来制备前体溶液。将前驱体溶液倒在水面上，在界面处形成PZT凝胶膜。通过将水从容器中排出，将凝胶膜轻轻地放置在Pt/IrO氧化物D22氧化物D2/SiO氧化物D22氧化物D2/Si衬底上。干燥后，在950℃下烧结10 min，可制备厚度为23μm的PZT厚膜。PGO包覆的粉末能有效降低烧结温度。PZT厚膜的剩余极化率（P_（max）D_2）为33.1 μ/cm ~（max）D_（12）D_1，相对介电常数为771。用马赫-曾德尔干涉仪系统测量了PZT厚膜的压电结构（d_（233））D_（233）D_（232））。PZT厚膜的极化电压为250 V，在室温下极化30 min。PZT厚膜的压电常数在200 ~ 3 kHz范围内为225 pm/V，为PZT厚膜用作微机械驱动器奠定了基础

项目成果

J. Lee, T. Yano, S. Shibata and M. Yamane: "Strucutural evolution during Cu+/Na+ ion -exchange in the system Na2O-Al203-SiO2"J. Non-Cryst, Solids. 246. 83-89 (1999)

J. Lee、T. Yano、S. Shibata 和 M. Yamane：“Na2O-Al2O3-SiO2 系统中 Cu/Na 离子交换过程中的结构演化”J。

Masayuki YAMANE: "Thick Silicate Glass Film for Waveguide" SPIE. 3136. 150-158 (1997)

Masayuki YAMANE：“用于波导的厚硅酸盐玻璃薄膜”SPIE。

S. Ozawa, N. Ohashi, M. Yamane and T. Tsurumi: "Fabrication and characterization of PZT thick films by a new sol-gel process using an interfacial polymerization"Ext. Abs. 9th US-Japan Seminar on Dielectric & Piezo. Ceram.. 413-416 (1999)

S. Ozawa、N. Ohashi、M. Yamane 和 T. Tsurumi：“通过使用界面聚合的新型溶胶-凝胶工艺制造和表征 PZT 厚膜”Ext。

S. Ozawa, N. Ohashi, M. Yamane and T. Tsurumi: "Fabrication and Characterization of PZT Thick Films by a New Sol-Gel Process Using an Interfacial Polymerization"Ext. Abs. 9th US-Japan Seminar on Dielectric & piezoelectric Ceramics. 413-416 (1999)

S. Ozawa、N. Ohashi、M. Yamane 和 T. Tsurumi：“采用界面聚合的新型溶胶-凝胶工艺制备 PZT 厚膜并对其进行表征”分机。

M. Yamane, T. Tsurumi and S. Ozawa: "Preparation of a Thick PZT Film by a New Sol-Gel Process Using an Interfacial Polymerization"Proc. 3rd Symp. Sol-Gel Sci. & Tech.. E7 (1998)

M. Yamane、T. Tsurumi 和 S. Ozawa：“利用界面聚合通过新型溶胶-凝胶工艺制备厚 PZT 薄膜”Proc。