Three-dimensional analysis of advanced industrial material using nano ion beam

本项目的目的是利用聚焦离子束的微加工和分析能力，建立先进工业材料三维微分析的新方法。构建了镓聚焦离子束和聚焦电子束与电子能量分析仪、脉冲镓聚焦离子束和飞行时间质谱仪的组合。首次组合实现了三维俄歇微量分析仪。受老式电子枪束流直径的限制，横向分辨率仅为1微米左右。原则上，深度分辨率约为5纳米，这受到转向精度和聚焦离子束轮廓的限制。从半导体器件中获得了浓度为10 ~ 20%的高质量的三维元素图。利用飞行时间、二次离子质谱图实现了200纳米左右的分辨率。对半导体器件的焊线部分进行了分析。硅和铝的三维地图清晰地显示出来。

The purpose of this project was to establish the new method for three-dimensional microanalysis of advanced industrial material, by utilizing micromachining and analytical capability of the focused ion beam. Combinations of a gallium focused ion beam and a focused electron beam together with an electron energy analyzer, and of a pulsed gallium focused ion beam and a time-of-flight, mass spectrometer were constructed.Three-dimensional Auger microanalyzer was realized by the first combination. Lateral resolution was limited to about 1 micrometer by the beam diameter of rather old type electron gun. In depth resolution was, in principle, about 5 nanometer which is limited by steering precision and profile of the focused ion beam. High quality three-dimensional elemental maps of elements with concentration of 10 to 20% were obtained from a semiconductor device.About 200 nanometer resolution was realized with the time-of-flight, secondary ion mass spectrometry mapping. A wire bonding part of a semiconductor device was analyzed. Three-dimensional maps of silicon and aluminum were clearly displayed.