Three-dimensional analysis of advanced industrial material using nano ion beam

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The purpose of this project was to establish the new method for three-dimensional microanalysis of advanced industrial material, by utilizing micromachining and analytical capability of the focused ion beam. Combinations of a gallium focused ion beam and a focused electron beam together with an electron energy analyzer, and of a pulsed gallium focused ion beam and a time-of-flight, mass spectrometer were constructed.Three-dimensional Auger microanalyzer was realized by the first combination. Lateral resolution was limited to about 1 micrometer by the beam diameter of rather old type electron gun. In depth resolution was, in principle, about 5 nanometer which is limited by steering precision and profile of the focused ion beam. High quality three-dimensional elemental maps of elements with concentration of 10 to 20% were obtained from a semiconductor device.About 200 nanometer resolution was realized with the time-of-flight, secondary ion mass spectrometry mapping. A wire bonding part of a semiconductor device was analyzed. Three-dimensional maps of silicon and aluminum were clearly displayed.