Hafren - High Voltage Lateral Bulk CMOS FETs

Hafren - 高压横向 Bulk CMOS FET

• 批准号: 101769
• 金额: $ 41.32万
• 依托单位: MICROCHIP TECHNOLOGY CALDICOT LIMITED
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2014
• 资助国家: 英国
• 起止时间: 2014 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=101769
• 关键词: Hafren; Voltage; Lateral; Bulk; CMOS

Hafren will develop novel lateral MOS-based high voltage (HV) devices (Vbr>1kV) to replace oversized and inefficient vertical MOSFETs in a range of applications including medical, consumer electronics (AC/DC converters) and LED drivers where high blocking voltage and low current drive is required. When compared to vertical MOSFETs, these lateral devices will be 6 times smaller with up to 10 times lower capacitance and extremely low leakage currents (<100nA @125C). This will significantly reduce power losses in the system, reduce cost and system footprint resulting in a compelling product. Lateral devices will be based on CMOS technology permitting monolithic integration with other external components (diodes, gate drivers, protection circuits), enabling realisation of more compact lower cost solutions with improved efficiency. The lateral design with all terminals on one side of the die will enable simpler product assembly process, leading to cheaper and more reliable end products. Novel flip-chip solutions for Chip-on-Board assembly of lateral HV devices will also be developed, which will, coupled with 6 times smaller MOSFETs enable further product miniaturisation.

Hafren将开发新型横向MOS高压（HV）器件（Vbr> 1 kV），以取代尺寸过大且效率低下的垂直MOSFET，用于医疗、消费电子（AC/DC转换器）和LED驱动器等需要高阻断电压和低电流驱动的应用。与垂直MOSFET相比，这些横向器件将小6倍，电容低10倍，漏电流极低（<100nA@125 C）。这将显著降低系统中的功率损耗，降低成本和系统占地面积，从而产生引人注目的产品。横向器件将基于CMOS技术，允许与其他外部元件（二极管、栅极驱动器、保护电路）进行单片集成，从而实现更紧凑、更低成本的解决方案，同时提高效率。所有端子均位于模具一侧的横向设计将简化产品组装过程，从而生产出更便宜、更可靠的最终产品。还将开发用于横向HV器件板上芯片组装的新型倒装芯片解决方案，该解决方案与小6倍的MOSFET相结合，可实现进一步的产品封装。