Novel Mid Infrared III-V Light Sources & Detectors enabling Autonomous Gas Sensors

新型中红外 III-V 光源

• 批准号: 102898
• 金额: $ 42.15万
• 依托单位: GAS SENSING SOLUTIONS LTD.
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=102898
• 关键词: Novel; Mid; Infrared; III; Light

This project addresses a rapid growth global market requirement, in many cases legislatively driven, for mass produced ultra-low power consumption gas sensors. The project will achieve a step change reduction in gas sensor power consumption through significant enhancement of current epitaxially grown compound semiconductor light source (light emitting diode [LED]) and photodiode detector (PD) performance. Enhanced performance would be achieved through development of novel mid infrared (MIR) edge emitting LED`s (EELED) and photodiode detector (PD`s) devices, utilising antimonide epi-grown bandgap structures. The project provides MIR EELED`S and PD`s tuned to specific gas absorption bands for use as the mid infrared light source and detector respectively in optical based gas sensors. Such ultra-low power consumption devices enable low cost “fit & forget” deployment of gas sensors specifically in smart wireless autonomous sensor networks. The consortium provides a manufacturing supply chain to implement new processes, light sources & detectors through to complete gas sensors. The project advances the Technology Readiness Level of EELED and PD capability to a late stage pre-commercial level, i.e. >TRL6.

该项目满足了快速增长的全球市场需求，在许多情况下是由立法驱动的，即大规模生产超低功耗气体传感器。该项目将通过显著提高当前外延生长化合物半导体光源（发光二极管[LED]）和光电二极管检测器（PD）的性能，实现气体传感器功耗的阶阶变化降低。通过开发利用锑外延生长带隙结构的新型中红外（MIR）边缘发射LED （EELED）和光电二极管探测器（PD’s）器件，可以实现性能的增强。该项目提供MIR EELED’s和PD’s调谐到特定的气体吸收波段，分别用作光学气体传感器中的中红外光源和探测器。这种超低功耗设备可以实现低成本的气体传感器部署，特别是在智能无线自主传感器网络中。该联盟提供制造供应链，通过完整的气体传感器实现新工艺、光源和探测器。该项目将EELED和PD能力的技术准备水平提高到后期预商用水平，即b> TRL6。