Novel Short-Wave Mid-Infrared Devices for Si Photonics Applications

点击翻译按钮获取中文摘要

This proposed project is to be a continuation of the work undertaken for the past two years under thesupervision of Professor Stephen Sweeney, who is transferring to the University of Glasgow in October 2022.Work completed during this time frame has focused primarily on light emitting devices that are epitaxiallygrown on Si platforms. This area is of particular interest for the realisation of optoelectronic integrated circuits(OEICs) for Si photonics applications, as many of the passive components have already been successfullydeveloped. Whilst III-Vs have illustrated success when integrated via wafer bonding techniques, epitaxialgrowth of high-quality active regions remains ideal for scaling manufacturing processes.This broad topic is subdivided into two related but distinct areas of interest. Firstly, in laser deviceson Si operating in the 2-3um range. Due to the abundance of molecular absorption lines in this spectralregion, realising high-quality emitters at these wavelengths promises the development of lab-on-a-chip OEICsfor applications in medical and environmental sensing. By utilising high hydrostatic pressure- and temperature dependentmeasurement techniques, in conjunction with band modelling, we are able to investigate efficiencylimiting mechanisms resulting from carrier dynamics [1, 2]. Thus far, this has been achieved for GaSb and GeSninvestigate as part of an ongoing collaboration with the universities of Montpellier and Arkansas, respectively,with papers in the pipeline for both. This is an activity that will continue for a number of novel samples overthe duration of the project.The second aspect of the project focuses on quantum dot based single photon sources on silicon. This hasbeen based on a collaboration with UCL. From the start of the third year, attention will be placed primarilyon the development of novel long wavelength quantum-dot based single-photon emitters on Si. Semiconductorquantum dots are a leading candidate for on-demand single-photon sources for quantum information processingapplications. This work is complementary to research at the university (e.g. the group of Dr Luca Sapienza).Whilst most devices are typically based on InAs technologies operating in the near infrared around 900nm, itwould be preferable to push this emission toward the telecommunications O- and C-bands at 1300 and 1550nm,respectively. This would enable transmission off-chip through standard fibre optics with minimised losses. Sucha reduction in emission energy can be achieved through bandgap engineering by alloying III-Vs with Bi, asproposed by the Sweeney group at Surrey [3]. In this work we propose doping of low density InAs quantum dotsamples with a low-density flux of Bi ions in an attempt to shift emission into the mid-infrared, with an aim ofmoving towards near-deterministic implantation of pre-selected dots. Characterisation is to then be conductedutilising a combinationReferences[1] B. N. Murdin, A. R. Adams, and S. J. Sweeney. Band structure and high-pressure measurements. In AnthonyKrier, editor, Mid-infrared Semiconductor Optoelectronics, pages 93-127. Springer London, London, 2006.[2] S. J. Sweeney, T. D. Eales, and I. P. Marko. The physics of mid-infrared semiconductor materials andheterostructures. In Eric Tourni'e and Laurent Cerutti, editors, Mid-infrared Optoelectronics, WoodheadPublishing Series in Electronic and Optical Materials, pages 3-56. Woodhead Publishing, 2020.[3] I. P. Marko and S. J. Sweeney. The physics of bismide-based lasers. In ShuminWang and Pengfei Lu, editors,Bismuth-Containing Alloys and Nanostructures, pages 263-298. Springer Singapore, Singapore, 2019.