Novel Short-Wave Mid-Infrared Devices for Si Photonics Applications

用于硅光子学应用的新型短波中红外器件

• 批准号: 2811154
• 金额: --
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2811154
• 关键词: Novel; Short; Wave; Mid; Infrared

This proposed project is to be a continuation of the work undertaken for the past two years under thesupervision of Professor Stephen Sweeney, who is transferring to the University of Glasgow in October 2022.Work completed during this time frame has focused primarily on light emitting devices that are epitaxiallygrown on Si platforms. This area is of particular interest for the realisation of optoelectronic integrated circuits(OEICs) for Si photonics applications, as many of the passive components have already been successfullydeveloped. Whilst III-Vs have illustrated success when integrated via wafer bonding techniques, epitaxialgrowth of high-quality active regions remains ideal for scaling manufacturing processes.This broad topic is subdivided into two related but distinct areas of interest. Firstly, in laser deviceson Si operating in the 2-3um range. Due to the abundance of molecular absorption lines in this spectralregion, realising high-quality emitters at these wavelengths promises the development of lab-on-a-chip OEICsfor applications in medical and environmental sensing. By utilising high hydrostatic pressure- and temperature dependentmeasurement techniques, in conjunction with band modelling, we are able to investigate efficiencylimiting mechanisms resulting from carrier dynamics [1, 2]. Thus far, this has been achieved for GaSb and GeSninvestigate as part of an ongoing collaboration with the universities of Montpellier and Arkansas, respectively,with papers in the pipeline for both. This is an activity that will continue for a number of novel samples overthe duration of the project.The second aspect of the project focuses on quantum dot based single photon sources on silicon. This hasbeen based on a collaboration with UCL. From the start of the third year, attention will be placed primarilyon the development of novel long wavelength quantum-dot based single-photon emitters on Si. Semiconductorquantum dots are a leading candidate for on-demand single-photon sources for quantum information processingapplications. This work is complementary to research at the university (e.g. the group of Dr Luca Sapienza).Whilst most devices are typically based on InAs technologies operating in the near infrared around 900nm, itwould be preferable to push this emission toward the telecommunications O- and C-bands at 1300 and 1550nm,respectively. This would enable transmission off-chip through standard fibre optics with minimised losses. Sucha reduction in emission energy can be achieved through bandgap engineering by alloying III-Vs with Bi, asproposed by the Sweeney group at Surrey [3]. In this work we propose doping of low density InAs quantum dotsamples with a low-density flux of Bi ions in an attempt to shift emission into the mid-infrared, with an aim ofmoving towards near-deterministic implantation of pre-selected dots. Characterisation is to then be conductedutilising a combinationReferences[1] B. N. Murdin, A. R. Adams, and S. J. Sweeney. Band structure and high-pressure measurements. In AnthonyKrier, editor, Mid-infrared Semiconductor Optoelectronics, pages 93-127. Springer London, London, 2006.[2] S. J. Sweeney, T. D. Eales, and I. P. Marko. The physics of mid-infrared semiconductor materials andheterostructures. In Eric Tourni'e and Laurent Cerutti, editors, Mid-infrared Optoelectronics, WoodheadPublishing Series in Electronic and Optical Materials, pages 3-56. Woodhead Publishing, 2020.[3] I. P. Marko and S. J. Sweeney. The physics of bismide-based lasers. In ShuminWang and Pengfei Lu, editors,Bismuth-Containing Alloys and Nanostructures, pages 263-298. Springer Singapore, Singapore, 2019.

该项目是Stephen Sweeney教授过去两年工作的延续，他将于2022年10月转到格拉斯哥大学。在此期间完成的工作主要集中在Si平台上外延生长的发光器件上。这一领域对于实现硅光子学应用的光电集成电路（OEIC）特别感兴趣，因为许多无源元件已经成功开发。虽然III-V族在通过晶圆键合技术集成时取得了成功，但高质量有源区的外延生长仍然是缩放制造工艺的理想选择。首先，在激光器件中，Si工作在2- 3 μ m范围内。由于该光谱区域中丰富的分子吸收线，在这些波长下实现高质量的发射器有望开发用于医疗和环境传感应用的芯片实验室OEIC。通过利用高静水压力和温度相关的测量技术，结合能带建模，我们能够研究载流子动力学导致的效率限制机制[1，2]。到目前为止，GaSb和GeSninvestigate已经实现了这一目标，这是与蒙彼利埃大学和阿肯色州大学分别进行的持续合作的一部分，两所大学的论文都在筹备中。这是一个活动，将继续为一些新的样品在整个项目的持续时间。该项目的第二个方面集中在量子点为基础的单光子源的硅。这是基于与UCL的合作。从第三年开始，重点将放在硅上的新型长波长量子点单光子发射器的开发上。半导体量子点是量子信息处理应用中按需单光子源的主要候选者。这项工作是对大学研究的补充（例如Luca Sapienza博士的研究小组）。虽然大多数设备通常基于在900 nm左右的近红外线下工作的InAs技术，但最好将这种发射分别推向1300 nm和1550 nm的电信O和C波段。这将使通过标准光纤的芯片外传输具有最小的损耗。发射能量的苏查减少可以通过带隙工程实现，如萨里的Sweeney小组所提出的，通过将III-V族与Bi合金化[3]。在这项工作中，我们提出了掺杂低密度InAs量子点样品与低密度流量的Bi离子，试图将发射转移到中红外，目的是走向近确定性植入预选点。然后利用参考文献[1] B的组合进行表征。N. Murdin，A. R.亚当斯和S. J·斯威尼能带结构和高压测量。在AnthonyKrier，编辑，Mid-infrared Semiconductor Optoelectronics，第93-127页中。施普林格伦敦，伦敦，2006年。[2]S. J. Sweeney，T. D.伊尔斯和我。P. Marko中红外半导体材料与异质结构物理。在Eric Tourni 'e和Laurent Cerutti的编辑中，中红外光电子学，Woodhead电子和光学材料出版系列，第3-56页。Woodhead出版社，2020年。[3]I. P. Marko和S. J·斯威尼铋化物基激光器的物理学。ShuminWang和Pengfei Lu，编辑，含铋合金和纳米结构，第263-298页。施普林格新加坡，新加坡，2019年。