Novel Short-Wave Mid-Infrared Devices for Si Photonics Applications

在Stephen Sweeney教授的指导下，这个拟议的项目将是过去两年工作的延续，Stephen Sweeney教授将于2022年10月转到格拉斯哥大学。在此期间完成的工作主要集中在硅平台上外延生长的发光器件上。该领域对于实现用于硅光子学应用的光电集成电路（OEICs）特别感兴趣，因为许多无源元件已经成功开发。虽然iii - v在通过晶圆键合技术集成时取得了成功，但高质量活性区域的外延生长仍然是扩展制造工艺的理想选择。这个广泛的主题被细分为两个相关但不同的兴趣领域。首先，在激光器件中，硅在2-3um范围内工作。由于该光谱区域的分子吸收谱线丰富，实现这些波长的高质量发射器有望开发用于医疗和环境传感的芯片实验室oeics。通过利用高流体静压和温度相关的测量技术，结合波段建模，我们能够研究由载流子动力学引起的效率限制机制[1,2]。到目前为止，GaSb和GeSninvestigate分别作为与蒙彼利埃大学和阿肯色州大学正在进行的合作的一部分，已经实现了这一目标，两所大学的论文都在准备中。在整个项目期间，这一活动将继续用于许多新样本。该项目的第二个方面侧重于基于硅的量子点单光子源。这是基于与伦敦大学学院的合作。从第三年开始，重点将放在基于硅的新型长波量子点单光子发射器的开发上。半导体量子点是量子信息处理应用中按需单光子源的主要候选者。这项工作是对大学研究（如卢卡·萨皮恩扎博士小组）的补充。虽然大多数设备通常基于在900纳米左右的近红外波段工作的InAs技术，但最好将这种发射分别推向1300纳米和1550nm的电信O和c波段。这将使通过标准光纤的片外传输以最小化损耗成为可能。这种发射能量的降低可以通过带隙工程来实现，通过将iii - v与Bi合金化，这是由Sweeney小组在Surrey[3]提出的。在这项工作中，我们提出用低密度的Bi离子通量掺杂低密度的InAs量子点样品，试图将发射转移到中红外，目的是向预选点的近确定性植入迈进。然后利用参考文献B. N.默丁，a . R.亚当斯和S. J.斯威尼的组合来进行特征描述。波段结构和高压测量。AnthonyKrier，编辑，中红外半导体光电子学，93-127页。施普林格伦敦，伦敦，2006S. J. Sweeney， T. D. Eales和I. P. Marko。中红外半导体材料和异质结构的物理学。见Eric Tourni'e和Laurent Cerutti，编辑，中红外光电子学，woodhead出版系列，电子和光学材料，第3-56页。伍德黑德出版社，2020马科和斯威尼。基于铋的激光器的物理学。见王淑敏、卢鹏飞主编，《含铋合金与纳米结构》263-298页。施普林格新加坡，新加坡，2019。

This proposed project is to be a continuation of the work undertaken for the past two years under thesupervision of Professor Stephen Sweeney, who is transferring to the University of Glasgow in October 2022.Work completed during this time frame has focused primarily on light emitting devices that are epitaxiallygrown on Si platforms. This area is of particular interest for the realisation of optoelectronic integrated circuits(OEICs) for Si photonics applications, as many of the passive components have already been successfullydeveloped. Whilst III-Vs have illustrated success when integrated via wafer bonding techniques, epitaxialgrowth of high-quality active regions remains ideal for scaling manufacturing processes.This broad topic is subdivided into two related but distinct areas of interest. Firstly, in laser deviceson Si operating in the 2-3um range. Due to the abundance of molecular absorption lines in this spectralregion, realising high-quality emitters at these wavelengths promises the development of lab-on-a-chip OEICsfor applications in medical and environmental sensing. By utilising high hydrostatic pressure- and temperature dependentmeasurement techniques, in conjunction with band modelling, we are able to investigate efficiencylimiting mechanisms resulting from carrier dynamics [1, 2]. Thus far, this has been achieved for GaSb and GeSninvestigate as part of an ongoing collaboration with the universities of Montpellier and Arkansas, respectively,with papers in the pipeline for both. This is an activity that will continue for a number of novel samples overthe duration of the project.The second aspect of the project focuses on quantum dot based single photon sources on silicon. This hasbeen based on a collaboration with UCL. From the start of the third year, attention will be placed primarilyon the development of novel long wavelength quantum-dot based single-photon emitters on Si. Semiconductorquantum dots are a leading candidate for on-demand single-photon sources for quantum information processingapplications. This work is complementary to research at the university (e.g. the group of Dr Luca Sapienza).Whilst most devices are typically based on InAs technologies operating in the near infrared around 900nm, itwould be preferable to push this emission toward the telecommunications O- and C-bands at 1300 and 1550nm,respectively. This would enable transmission off-chip through standard fibre optics with minimised losses. Sucha reduction in emission energy can be achieved through bandgap engineering by alloying III-Vs with Bi, asproposed by the Sweeney group at Surrey [3]. In this work we propose doping of low density InAs quantum dotsamples with a low-density flux of Bi ions in an attempt to shift emission into the mid-infrared, with an aim ofmoving towards near-deterministic implantation of pre-selected dots. Characterisation is to then be conductedutilising a combinationReferences[1] B. N. Murdin, A. R. Adams, and S. J. Sweeney. Band structure and high-pressure measurements. In AnthonyKrier, editor, Mid-infrared Semiconductor Optoelectronics, pages 93-127. Springer London, London, 2006.[2] S. J. Sweeney, T. D. Eales, and I. P. Marko. The physics of mid-infrared semiconductor materials andheterostructures. In Eric Tourni'e and Laurent Cerutti, editors, Mid-infrared Optoelectronics, WoodheadPublishing Series in Electronic and Optical Materials, pages 3-56. Woodhead Publishing, 2020.[3] I. P. Marko and S. J. Sweeney. The physics of bismide-based lasers. In ShuminWang and Pengfei Lu, editors,Bismuth-Containing Alloys and Nanostructures, pages 263-298. Springer Singapore, Singapore, 2019.