Novel Short-Wave Mid-Infrared Devices for Si Photonics Applications

用于硅光子学应用的新型短波中红外器件

• 批准号: 2811154
• 金额: --
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2811154
• 关键词: Novel; Short; Wave; Mid; Infrared

This proposed project is to be a continuation of the work undertaken for the past two years under thesupervision of Professor Stephen Sweeney, who is transferring to the University of Glasgow in October 2022.Work completed during this time frame has focused primarily on light emitting devices that are epitaxiallygrown on Si platforms. This area is of particular interest for the realisation of optoelectronic integrated circuits(OEICs) for Si photonics applications, as many of the passive components have already been successfullydeveloped. Whilst III-Vs have illustrated success when integrated via wafer bonding techniques, epitaxialgrowth of high-quality active regions remains ideal for scaling manufacturing processes.This broad topic is subdivided into two related but distinct areas of interest. Firstly, in laser deviceson Si operating in the 2-3um range. Due to the abundance of molecular absorption lines in this spectralregion, realising high-quality emitters at these wavelengths promises the development of lab-on-a-chip OEICsfor applications in medical and environmental sensing. By utilising high hydrostatic pressure- and temperature dependentmeasurement techniques, in conjunction with band modelling, we are able to investigate efficiencylimiting mechanisms resulting from carrier dynamics [1, 2]. Thus far, this has been achieved for GaSb and GeSninvestigate as part of an ongoing collaboration with the universities of Montpellier and Arkansas, respectively,with papers in the pipeline for both. This is an activity that will continue for a number of novel samples overthe duration of the project.The second aspect of the project focuses on quantum dot based single photon sources on silicon. This hasbeen based on a collaboration with UCL. From the start of the third year, attention will be placed primarilyon the development of novel long wavelength quantum-dot based single-photon emitters on Si. Semiconductorquantum dots are a leading candidate for on-demand single-photon sources for quantum information processingapplications. This work is complementary to research at the university (e.g. the group of Dr Luca Sapienza).Whilst most devices are typically based on InAs technologies operating in the near infrared around 900nm, itwould be preferable to push this emission toward the telecommunications O- and C-bands at 1300 and 1550nm,respectively. This would enable transmission off-chip through standard fibre optics with minimised losses. Sucha reduction in emission energy can be achieved through bandgap engineering by alloying III-Vs with Bi, asproposed by the Sweeney group at Surrey [3]. In this work we propose doping of low density InAs quantum dotsamples with a low-density flux of Bi ions in an attempt to shift emission into the mid-infrared, with an aim ofmoving towards near-deterministic implantation of pre-selected dots. Characterisation is to then be conductedutilising a combinationReferences[1] B. N. Murdin, A. R. Adams, and S. J. Sweeney. Band structure and high-pressure measurements. In AnthonyKrier, editor, Mid-infrared Semiconductor Optoelectronics, pages 93-127. Springer London, London, 2006.[2] S. J. Sweeney, T. D. Eales, and I. P. Marko. The physics of mid-infrared semiconductor materials andheterostructures. In Eric Tourni'e and Laurent Cerutti, editors, Mid-infrared Optoelectronics, WoodheadPublishing Series in Electronic and Optical Materials, pages 3-56. Woodhead Publishing, 2020.[3] I. P. Marko and S. J. Sweeney. The physics of bismide-based lasers. In ShuminWang and Pengfei Lu, editors,Bismuth-Containing Alloys and Nanostructures, pages 263-298. Springer Singapore, Singapore, 2019.

这个提议的项目将是在过去两年中的延续，在史蒂芬·斯威尼（Stephen Sweeney）教授的情况下，他将于2022年10月转移到格拉斯哥大学。在此时间范围内完成的工作主要集中在光线上的光线设备上。对于SI光子学应用程序的光电集成电路（OEIC），该领域特别感兴趣，因为许多被动组件已经成功开发。尽管III-VS通过晶圆粘结技术整合到了成功，但高质量活跃区域的外观生长仍然是扩展制造过程的理想之选。该广泛的主题细分为两个相关但独特的感兴趣领域。首先，在2-3UM范围内运行的激光设备中。由于该光谱中的分子吸收线丰富，因此在这些波长上实现了高质量的发射器，有望在医学和环境感应中开发实验室OEICSORICSORICS的实验性应用。通过利用较高的静水压力和温度依赖性测量技术，结合带模型，我们能够研究由载体动力学引起的效率限制机制[1，2]。到目前为止，这是与蒙彼利埃和阿肯色州大学进行的持续合作的一部分，与穆斯布和gesninvestigate一起实现了这一点，两者都在管道上进行了论文。这是一项活动，该活动将在项目的持续时间内继续进行许多新型样本。该项目的第二个方面着重于基于量子点的硅上的单个光子源。这基于与UCL的合作。从第三年开始，将主要关注基于SI的新型长波长量子点发射器的新型长波长量子点的发展。半导体点点是用于量子信息处理应用程序的按需单光子源的领先候选者。这项工作与大学的研究是互补的（例如，卢卡·萨皮恩扎（Luca Sapienza）博士）。当大多数设备通常基于在900nm左右在近红外运营的INAS技术，最好将这种排放推向电信O-和C-Bands，分别为1300和1550nm。这将使通过标准光纤以最小损失的标准光纤发射芯片。通过合金III​​-Vs的带隙工程可以实现发射能量的降低，这是由Surrey [3]的Sweeney组惊讶的。在这项工作中，我们提出了低密度量子dotsamples的掺杂，并试图将排放量转移到中红外，目的是朝着预先选择的点的近乎确定的植入。然后，表征是为了在组合介绍中进行研究[1] B. N. Murdin，A。R. Adams和S. J. Sweeney。带结构和高压测量。在Anthonykrier中，编辑，中红外半导体光电学，第93-127页。伦敦施普林格，2006年。[2] S. J. Sweeney，T。D。Eales和I. P. Marko。中红外半导体材料的物理和余粒结构。在Eric Tourni'e和Laurent Cerutti中，编辑，中红外光电，电子和光学材料的Woodheadheadpublishing系列，第3-56页。伍德海德出版社，2020年。[3] I. P. Marko和S. J. Sweeney。基于宾抗物的激光器的物理学。在Shuminwang和Pengfei Lu中，编辑，含有士兵的合金和纳米结构，第263-298页。新加坡施普林格新加坡，2019年。