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Novel InSb quantum dots monolithically grown on silicon for low cost mid-infrared light emitting diodes

新型 InSb 量子点在硅上单片生长，用于低成本中红外发光二极管

基本信息

批准号：
EP/N018605/1
负责人：
Peter Carrington
金额：
$ 12.71万
依托单位：
Lancaster University
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2016
资助国家：
英国
起止时间：
2016 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FN018605%2F1
关键词：
Novel InSb quantum dots monolithically

项目摘要

There is great worldwide interest in the mid-infrared spectral region (2-5 um) as it contains the fundamental absorption bands of a number of pollutant and toxic gases and liquids. These include gases such as carbon dioxide, carbon monoxide and hydrogen chloride which require accurate, in-situ multi-component monitoring in a number of industries such as oil-rigs, coal mines, land-fill sites and car exhausts. Strong absorption bands also exist for drug intermediates, pharmaceuticals, narcotics and biochemicals where the absorption strength is typically 2 orders of magnitude stronger than in the near-infrared allowing highly selective and sensitive detection in the fields of: environmental monitoring, bio-medicine, industrial process control and health and safety. There is also an atmospheric transmission window between 3.6 and 3.8 um which enables free space optical communication and thermal imaging in both civil and military situations as well as the development of infrared countermeasures for homeland security. However, these applications have yet to be fully exploited due to the lack of efficient and affordable light sources and detectors. This work proposes the growth and fabrication of a new light emitting diode (LED) architecture based on indium antimonide (InSb) quantum dots onto low cost silicon (Si) substrates. This will revolutionize how we utilize these devices and lead to a dramatic scaling in the cost and size of the optical systems to enable their widespread uptake. It will also enable the photonic components to be directly embedded into electronic circuits which would open up a new field of mid-infrared photonic integrated circuits. This would generate entirely new technology in areas such as integrated 'lab-on-a-chip' sensors and compact biochips bringing great commercial benefits and opportunities to the UK.In the last few years, there has been significant progress in the development of mid-infrared devices using interband cascade lasers and type II superlattices. However these structures are extremely complex and expensive to fabricate and are grown on gallium antimonide (GaSb) substrates which are of poor quality, high cost (~50 times the cost of Si) and are only available in small sizes. Growth onto silicon would be most desireable to enable cost effective manufacture and to ensure future commercial success. The major obstacle in direct epitaxial growth of III-Vs onto Si is the large lattice mismatch between the III-V/Si interface, resulting in a large density of threading dislocations (TDs) which strongly deteriorate the device performance. This project shall overcome this by implementation of a new device design based on InSb quantum dots on low defect density GaSb buffer layers grown on Si. The key advantages are the mechanical robustness and very low sensitivity of the quantum dots to TD compared to bulk or quantum well structures, and the suppression of non-radiative Auger recombination to increase the quantum efficiency. In a quantum well device, every threading dislocation which propagates through it will act as a non-radiative centre drastically reducing the device performance. However in a QD, each TD will only 'kill' one or a few isolated dots which will not significantly affect device performance providing the TD density in the buffer layer can be reduced to moderate-to-low levels. Low defect density GaSb buffer layers shall be realized through novel 'interfacial misfit arrays (IMF)' and dislocation filtering layers designed to bend and annihilate TD generated at the III-V/Si interface. The Si based mid-infrared LEDs will be developed in close collaboration with academic (University of Southampton and University of Montpellier) and industrial (Compound Semiconductor Technologies and Gas Sensing Solutions) project partners to evaluate device performance for use in practical applications which will help to achieve future commercialisation.

全世界对中红外光谱区（2-5 μ m）有很大的兴趣，因为它包含许多污染物和有毒气体和液体的基本吸收带。其中包括二氧化碳、一氧化碳和氯化氢等气体，这些气体在石油钻井平台、煤矿、垃圾填埋场和汽车尾气等许多行业中需要进行准确的现场多组分监测。强吸收带也存在于药物中间体、药品、麻醉剂和生物化学品中，其中吸收强度通常比近红外强2个数量级，从而允许在以下领域中进行高度选择性和灵敏的检测：环境监测、生物医学、工业过程控制以及健康和安全。还有一个在3.6和3.8微米之间的大气传输窗口，可以在民用和军用情况下进行自由空间光通信和热成像，以及开发用于国土安全的红外对抗措施。然而，由于缺乏高效和负担得起的光源和检测器，这些应用尚未得到充分利用。这项工作提出了一种新的发光二极管（LED）架构的生长和制造的基础上，锑化铟（InSb）量子点到低成本的硅（Si）衬底。这将彻底改变我们利用这些设备的方式，并导致光学系统的成本和尺寸急剧扩大，使其能够广泛应用。它还将使光子器件能够直接嵌入到电子电路中，这将开辟中红外光子集成电路的新领域。这将在集成的“芯片实验室”传感器和紧凑型生物芯片等领域产生全新的技术，为英国带来巨大的商业利益和机会。在过去几年中，使用带间级联激光器和II型超晶格的中红外器件的开发取得了重大进展。然而，这些结构制造起来极其复杂和昂贵，并且生长在锑化镓（GaSb）衬底上，该衬底质量差、成本高（约为Si成本的50倍）并且仅以小尺寸可用。在硅上的生长将是最期望的，以实现成本有效的制造并确保未来的商业成功。在Si上直接外延生长III-V族的主要障碍是III-V/Si界面之间的大的晶格失配，导致大密度的穿透位错（TD），这强烈地劣化器件性能。本项目将克服这一点，通过实施一个新的器件设计的基础上，在低缺陷密度的GaSb缓冲层生长在Si上的InSb量子点。关键的优点是与体或量子阱结构相比，量子点对TD的机械鲁棒性和非常低的灵敏度，以及抑制非辐射俄歇复合以增加量子效率。在量子阱器件中，每一个穿过它的穿透位错都将充当非辐射中心，大大降低器件性能。然而，在QD中，每个TD将仅“杀死”一个或几个孤立的点，这将不会显著影响器件性能，前提是缓冲层中的TD密度可以降低到中等至低水平。低缺陷密度GaSb缓冲层将通过新型“界面失配阵列（IMF）”和位错过滤层来实现，所述位错过滤层被设计成弯曲并消除在III-V/Si界面处产生的TD。硅基中红外LED将与学术（南安普顿大学和蒙彼利埃大学）和工业（化合物半导体技术和气体传感解决方案）项目合作伙伴密切合作开发，以评估实际应用中使用的设备性能，这将有助于实现未来的商业化。

项目成果

期刊论文数量（9）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon

ULTRARAM：低能耗、高耐用性、硅基复合半导体存储器

DOI：
10.1002/aelm.202101103
发表时间：
2022
期刊：
Advanced Electronic Materials
影响因子：
6.2
作者：
Hodgson P
通讯作者：
Hodgson P

Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

DOI：
10.1109/jphot.2019.2911433
发表时间：
2019-04
期刊：
IEEE Photonics Journal
影响因子：
2.4
作者：
E. Delli;P. Hodgson;E. Repiso;A. Craig;Jonathan P. Hayton;Q. Lu;A. Marshall;A. Krier;P. Carrington
通讯作者：
E. Delli;P. Hodgson;E. Repiso;A. Craig;Jonathan P. Hayton;Q. Lu;A. Marshall;A. Krier;P. Carrington

Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy

分子束外延生长的InGaSb/GaAs量子点的光学和结构特性