Towards room-temperature multiferroics by doping and ionic liquid gating

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This project aims to develop new multiferroic materials for high performance computing and data storage technologies. Semiconductor industry leaders have identified the development of these materials, operating a room temperature, as a key challenge in enabling future high speed, high performance logic and memory devices. The intended outcomes of this work are (i) the delivery of new multiferroic materials by magnetic doping of a semiconductor, strained to a ferroelectric state and (ii) the demonstration of a new paradigm in materials design to realise such materials. The key benefit of this work is the enabling of next generation computing and memory devices exhibiting higher speeds, reduced sizes and lower power consumption.