To demonstrate the potential to make low cost, high efficiency LEDs using 3C-SiC substrates

展示使用 3C-SiC 基板制造低成本、高效率 LED 的潜力

• 批准号: 132135
• 金额: $ 29.19万
• 依托单位: ANVIL SEMICONDUCTORS LIMITED
• 依托单位国家: 英国
• 项目类别: Feasibility Studies
• 财政年份: 2015
• 资助国家: 英国
• 起止时间: 2015 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=132135
• 关键词: demonstrate; potential; make; low; cost

The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil’s silicon carbide onsilicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with theUniversity of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency powerdevices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of singlephase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter siliconwafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting.Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on largediameter silicon wafers using IP originally developed at The University of Cambridge. Anvil’s IP manages theinevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, toproduce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effecton the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.

该项目的目的是在Anvil的碳化硅硅晶片（3C-SiC/Si）上开发高效率、低成本的GaN基LED。Anvil最近与剑桥大学完成了一项由Innovate UK资助的可行性研究，该研究证明了其为低成本高效率功率器件开发的3C-SiC层在LED中具有令人兴奋的应用，因为它提供了一种立方衬底，可以在大直径硅片上生长单相立方GaN。在大直径硅晶片上生产立方GaN的能力显然被认为是提高效率和降低LED照明成本的关键推动因素。Plessey已经开始将在大直径硅晶片上生长的传统（Hexononal）GaN中生产的LED商业化，该技术最初是在剑桥大学开发的。Anvil的IP管理在硅晶片上生长SiC时不可避免的应力。该项目将这三种技术结合在一起，以生产高效率，低成本的LED。这样的成本/性能改进将对LED市场产生破坏性影响，从而推动用固态照明替代白炽灯和节能灯。