To demonstrate the potential to make low cost, high efficiency LEDs using 3C-SiC substrates

该项目的目的是开发高效率、低成本的GaN基LED，该LED是在Anvil的硅基碳化硅(3C-SiC/Si)上开发的。Anvil最近与剑桥大学共同完成了Innovate UK资助的可行性研究，该研究展示了其为低成本高效功率器件开发的3C-SiC层在LED中的令人兴奋的应用，它提供了一种立方体衬底，使单相立方氮化镓能够在大直径硅晶片上生长。在大直径硅片上生产立方GaN的能力显然被认为是提高LED照明效率和降低成本的关键因素。Plessey已经开始利用最初由剑桥大学开发的IP将在大直径硅片上生长的传统(六角形)GaN中生产的LED商业化。当在硅片上生长碳化硅时，Anvil的IP解决了不可避免的压力。该项目将这三项技术结合在一起，生产出高效率、低成本的LED。这种性价比的提高将对LED市场产生颠覆性影响，推动用固态照明取代白炽灯和节能灯。

The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil’s silicon carbide onsilicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with theUniversity of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency powerdevices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of singlephase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter siliconwafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting.Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on largediameter silicon wafers using IP originally developed at The University of Cambridge. Anvil’s IP manages theinevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, toproduce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effecton the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.