To demonstrate the potential to make low cost, high efficiency LEDs using 3C-SiC substrates

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The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil’s silicon carbide onsilicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with theUniversity of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency powerdevices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of singlephase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter siliconwafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting.Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on largediameter silicon wafers using IP originally developed at The University of Cambridge. Anvil’s IP manages theinevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, toproduce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effecton the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.