Molecular Diodes and an Approch to Single Molecule Electronics

分子二极管和单分子电子学方法

• 批准号: EP/F000987/2
• 负责人: Geoff Ashwell
• 金额: --
• 依托单位: Lancaster University
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2010
• 资助国家: 英国
• 起止时间: 2010 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FF000987%2F2
• 关键词: Molecular; Diodes; Approch; Single; Molecule

Molecular electronics represents the ultimate challenge in device miniaturisation: it provides the means to design components with specific properties and, in relation to this, a recent discovery from the applicant's group has resulted in the highest intrinsic rectification ratio to date from a molecular diode (Ashwell et al., Phys. Chem. Chem. Phys. 2006, 8, 3314). The reported current ratio of 3000 at +/-1 V represents a 150-fold improvement compared with the next highest reported value from another group. The discovery has attracted much attention: the paper was designated as a Hot Article in June 2006 and it has since been listed as a Top Ten paper on the Royal Society of Chemistry website for seven consecutive months and most accessed six times; it also features on the journal's cover and there are editorial highlights of the paper in Korean, Polish and UK journals. There are still few examples of intrinsic rectification from organic films and, until now, the reported current ratios have been far too small to have any practical significance. The aforementioned discovery overcomes this deficiency and the experimentally challenging objective of this proposal is to enhance the performance of molecular diodes when studied as ultra-thin films and ultimately single molecule devices. It will be attempted by (i) optimising the rectifying donor-acceptor sequence in sterically hindered Au/D-bridge-D*-bridge-A/Au and Au/D-bridge-A*-bridge-A/Au structures in which the asterisks represent weaker electroactive components and (ii) developing non-invasive contacting techniques that involve the post-fabrication self-assembly of single molecules or small molecular clusters across nano-sized gold electrode gaps. The aim is to utilise the discoveries made to date to increase the rectification ratio to 100,000 at +/-1 V.

分子电子学代表了器件小型化的终极挑战：它提供了设计具有特定属性的组件的方法，并且与此相关的是，申请人小组最近的一项发现导致了分子二极管迄今为止最高的本征整流比（Ashwell 等人，Phys. Chem. Chem. Phys. 2006, 8, 3314）。报告的 +/-1 V 电流比为 3000，与另一组报告的下一个最高值相比提高了 150 倍。这一发现引起了广泛关注：该论文于2006年6月被评为Hot Article，此后连续7个月被英国皇家化学学会网站列为前十论文，访问次数最多6次；它还出现在该期刊的封面上，并且在韩国、波兰和英国期刊上都有该论文的编辑亮点。有机薄膜的本征整流的例子仍然很少，而且到目前为止，报道的电流比太小，没有任何实际意义。上述发现克服了这一缺陷，并且该提案的实验挑战性目标是在作为超薄膜和最终单分子器件进行研究时增强分子二极管的性能。将尝试通过以下方式尝试：（i）优化空间位阻Au/D-桥-D*-桥-A/Au和Au/D-桥-A*-桥-A/Au结构中的整流供体-受体序列，其中星号代表较弱的电活性成分，以及（ii）开发涉及单层制造后自组装的非侵入性接触技术。 分子或小分子簇穿过纳米尺寸的金电极间隙。目的是利用迄今为止的发现将 +/-1 V 下的整流比提高到 100,000。