Development of full-color III-nitride laser diodes

点击翻译按钮获取中文摘要

Significant progress has been made in III-nitride-based lighting technologies in the past decades. Owing to excellent and unique properties, including direct, tunable energy bandgaps (from short UV to longer infrared wavelengths), III-nitride (GaN and its alloys) is the material of choice for today's massive light-emitting diode (LED) based solid-state lighting technology. Despite this huge success, there are still many critical challenges to overcome. For example, III-nitride LEDs still exhibit low efficiency in the green and red spectral wavelengths; even blue LEDs show an efficiency drop when operated at a high current. These challenges can be by and large solved by growing these materials defects free using plasma-assisted molecular beam epitaxy. Furthermore, the efficiency-related problems associated with the current LED technology can be addressed byelectrically injected laser diodes (LDs). In this international collaboration, Dr. Muziol will grow device quality III-nitrides materials and Dr Sadaf will fabricate the devices.This Alliance international catalyst grant will be an essential first step to developing compact, high efficiency, full-colour laser diodes. The laser diodes will be valuable for a range of essential applications, including solid-state lighting, AR/VR, display, LIDAR, and photonic integrated circuits. The development of full-color lasers will establish Canada as a leading player in the worldwide photonics sector. The HQPs will get hands-on exposure to state-of-the-art growth and fabrication facilities. Therefore, the HQPs involved in this project will be highly benefitted and will be assets to Canadian academia and the photonics job market.