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NSF Materials World Network: Creating Optoelectronic Materials and Devices Inside Microstructured Optical Fibers

NSF 材料世界网络：在微结构光纤内创建光电材料和器件

基本信息

批准号：
EP/G028273/1
负责人：
Pier Sazio
金额：
$ 70.41万
依托单位：
University of Southampton
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2009
资助国家：
英国
起止时间：
2009 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FG028273%2F1
关键词：
NSF Materials World Network Creating

项目摘要

The development of optical fibres led directly to the data communications revolution of the late 20th century and are now impacting many other fields from remote sensing to biomedicine. This impact is growing in part because of rapid advances in active devices for which the fibre serves not merely as a passive waveguide, but as a medium to directly modulate, generate, or otherwise manipulate light. As a result of this versatility, fibres form key components of systems in almost any applications that use light. In parallel with these breakthroughs in photonics, the computer and microelectronics industries has seen exponential growth every 18 months since the 1960's of the performance to price ratio of transistors on CPU and DRAM chips, with commensurate improvements in optoelectronic components such as the visible lasers used in DVD players, and the infrared laser diodes used to generate and modulate light for data communications in optical fibres. The crystalline semiconductors upon which all microelectronics is based, namely silicon, germanium, gallium arsenide and many others, are familiar to almost every scientist and engineer. The advanced technological fields represented by fibre optics that are based on very long, very thin strands of glass and microelectronics based on planar chips fabricated by lithography, are typically integrated to create communication network systems by using intermediate optics and packaging. However, the technology we are developing allows crystalline semiconductor structures made from silicon and germanium directly inside the optical fibre itself. This technique utilises a deposition process similar to that used for modern planar electronic devices and so opens up the possibility for directly combining the light guiding capabilities of optical fibres with the exceptional capabilities of semiconductors for manipulating light and electrons. This suggests that many of the functions currently performed by planar optoelectronics might now be integrated directly inside the fibre itself, and that many new semiconductor devices that cannot be realised in a conventional planar geometry may now become possible. Advanced technological applications demand high performance devices, which in turn require exceptional materials; our efforts focus on the fundamental materials research and development necessary to move this innovation beyond the laboratory to next generation photonic devices and systems.

光纤的发展直接引发了 20 世纪末的数据通信革命，目前正在影响从遥感到生物医学的许多其他领域。这种影响越来越大，部分原因是有源器件的快速发展，其中光纤不仅充当无源波导，而且充当直接调制、生成或以其他方式操纵光的介质。由于这种多功能性，光纤构成了几乎所有使用光的应用系统的关键组件。与光子学的这些突破同时，自 20 世纪 60 年代以来，计算机和微电子行业的 CPU 和 DRAM 芯片上的晶体管的性价比每 18 个月呈指数级增长，光电组件也相应改进，例如 DVD 播放器中使用的可见激光器，以及用于生成和调制数据通信光的红外激光二极管。光纤。所有微电子学所基于的晶体半导体，即硅、锗、砷化镓等，几乎每个科学家和工程师都熟悉。以基于非常长、非常细的玻璃丝的光纤和基于光刻制造的平面芯片的微电子为代表的先进技术领域通常通过使用中间光学器件和封装来集成以创建通信网络系统。然而，我们正在开发的技术允许将由硅和锗制成的晶体半导体结构直接内置于光纤本身中。该技术采用与现代平面电子器件类似的沉积工艺，因此为直接将光纤的光导功能与半导体操纵光和电子的卓越功能相结合提供了可能性。这表明，目前由平面光电器件执行的许多功能现在可能直接集成在光纤本身内部，并且许多无法在传统平面几何结构中实现的新型半导体器件现在可能成为可能。先进的技术应用需要高性能的设备，而高性能的设备又需要特殊的材料；我们的工作重点是基础材料的研究和开发，以将这种创新从实验室转移到下一代光子器件和系统。