Spin Transfer Torque in Ferromagnetic Semiconductors and Hybrid Devices for Nanospintronics
铁磁半导体和纳米自旋电子学混合器件中的自旋转移力矩
基本信息
- 批准号:EP/H002294/1
- 负责人:
- 金额:$ 35.42万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2010
- 资助国家:英国
- 起止时间:2010 至 无数据
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The control of magnetic properties using electrical currents is a central activity in the fast-moving research field of nanospintronics. The underlying mechanism, called spin-transfer torque, offers fundamentally new insights into the interactions of charge and spin as well as prospects for new high-density storage devices, non-volatile memories and microwave emitters and filters. A key challenge here is to minimise the magnitude of the critical currents required while maintaining thermal stability. It has recently been demonstrated that, in ferromagnetic semiconducting materials based on III-V compounds, the critical currents required can be orders of magnitude lower than in metals. These materials also offer the ability to precisely tune and control their properties, so that ferromagnetic semiconductors form an ideal testing ground for enhancing the understanding of spin transfer torque and related effects.This proposal is for an extensive 3 year collaborative programme of research which aims to investigate aspects of both the fundamentals of charge and spin interactions and transport in spintronic devices and the potential of nanospintronic devices to provide a new paradigm for future electronics. We focus on the interaction between an electrical current and local spins in nanowires and tunnelling structures. Through this project we will develop novel device structures in order to address open questions of technological importance, including the role played by spin-orbit coupling and the compatibility with semiconductor technology. A particularly novel aspect of this project is that it exploits the extreme flexibility of ferromagnetic semiconductor systems to understand the fundaments of these effects while also exploring them in room temperature ferromagnetic metal systems. The project brings together complementary expertise of leading semiconductor spintronics research groups in the UK and China, firmly establishing a new collaboration while also strengthening existing ones, and exploits recent achievements by each participant in state-of-the-art materials development and new device concepts.
利用电流控制磁性是快速发展的纳米自旋电子学研究领域的一个中心活动。这种被称为自旋转移扭矩的基本机制提供了对电荷和自旋相互作用的全新见解,并为新的高密度存储设备、非易失性存储器以及微波发射器和过滤器的前景提供了新的前景。这里的一个关键挑战是在保持热稳定性的同时将所需的临界电流的大小降至最低。最近已经证明,在以III-V化合物为基础的铁磁半导体材料中,所需的临界电流可以比金属中的低一个数量级。这些材料还提供了精确调整和控制其性质的能力,使铁磁性半导体形成了一个理想的试验场,以加强对自旋转移扭矩和相关影响的了解。这项建议是一个广泛的3年合作研究计划,旨在研究自旋电子器件中电荷和自旋相互作用和输运的基本原理,以及纳米自旋内子器件的潜力,为未来的电子学提供一个新的范例。我们主要研究电流与纳米线和隧道结构中的局域自旋之间的相互作用。通过这个项目,我们将开发新的器件结构,以解决技术上的重要问题,包括自旋-轨道耦合所起的作用以及与半导体技术的兼容性。这个项目的一个特别新颖的方面是,它利用铁磁半导体系统的极端灵活性来理解这些效应的基本原理,同时也在室温铁磁金属系统中探索它们。该项目汇集了英国领先的半导体自旋电子学研究小组和中国的互补专业知识,在加强现有合作的同时坚定地建立了新的合作,并利用了每个参与者在最先进的材料开发和新器件概念方面的最新成果。
项目成果
期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Crystalline anisotropic magnetoresistance in quaternary ferromagnetic semiconductor (Ga,Mn)(As,Sb)
- DOI:10.1063/1.4791580
- 发表时间:2013-02-04
- 期刊:
- 影响因子:4
- 作者:Howells, B.;Wang, M.;Gallagher, B. L.
- 通讯作者:Gallagher, B. L.
Strain control of magnetic anisotropy in (Ga,Mn)As microbars
(Ga,Mn)As 微棒中磁各向异性的应变控制
- DOI:10.1103/physrevb.83.115312
- 发表时间:2011
- 期刊:
- 影响因子:3.7
- 作者:King C
- 通讯作者:King C
Temperature dependence of spin-orbit torque effective fields in the diluted magnetic semiconductor (Ga,Mn)As
稀磁半导体 (Ga,Mn)As 中自旋轨道扭矩有效场的温度依赖性
- DOI:10.48550/arxiv.1407.2409
- 发表时间:2014
- 期刊:
- 影响因子:0
- 作者:Howells B
- 通讯作者:Howells B
Fast switching of magnetization in the ferromagnetic semiconductor (Ga,Mn)(As,P) using nonequilibrium phonon pulses
使用非平衡声子脉冲快速切换铁磁半导体 (Ga,Mn)(As,P) 中的磁化强度
- DOI:10.1063/1.3672029
- 发表时间:2011
- 期刊:
- 影响因子:4
- 作者:Casiraghi A
- 通讯作者:Casiraghi A
Intrinsic magnetic refrigeration of a single electron transistor
- DOI:10.1063/1.4941289
- 发表时间:2016-02-01
- 期刊:
- 影响因子:4
- 作者:Ciccarelli, C.;Campion, R. P.;Ferguson, A. J.
- 通讯作者:Ferguson, A. J.
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Bryan Gallagher其他文献
Managing Social Innovation
管理社会创新
- DOI:
- 发表时间:
2014 - 期刊:
- 影响因子:0
- 作者:
T. Lawrence;Graham Dover;Bryan Gallagher - 通讯作者:
Bryan Gallagher
Bryan Gallagher的其他文献
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{{ truncateString('Bryan Gallagher', 18)}}的其他基金
Antiferromagnetic devices for spintronic memory applications
用于自旋电子存储应用的反铁磁器件
- 批准号:
EP/P019749/1 - 财政年份:2017
- 资助金额:
$ 35.42万 - 项目类别:
Research Grant
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具有时序迁移能力的Spiking-Transfer learning (脉冲-迁移学习)方法研究
- 批准号:61806040
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- 资助金额:20.0 万元
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Novel designs of Spin Torque Transfer Magnetic Random Access Memory (STT-MRAM) devices
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561528-2021 - 财政年份:2021
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Establishment of evaluation method for Neel spin orbit torque in C11b Cr2Al via magnetic transfer
磁传递评估C11b Cr2Al中Neel自旋轨道力矩方法的建立
- 批准号:
20K15109 - 财政年份:2020
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Grant-in-Aid for Early-Career Scientists
SHF: Small: Collaborative Research: Energy Efficient Strain Assisted Spin Transfer Torque Memory
SHF:小型:合作研究:节能应变辅助自旋转移扭矩存储器
- 批准号:
1816406 - 财政年份:2018
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$ 35.42万 - 项目类别:
Standard Grant
SHF: Small: Collaborative Research: Energy Efficient Strain Assisted Spin Transfer Torque Memory
SHF:小型:合作研究:节能应变辅助自旋转移扭矩存储器
- 批准号:
1815033 - 财政年份:2018
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Standard Grant
CAREER: iMPACT: Metaphysical and Probabilistic-Based Computing Transformation with Emerging Spin-Transfer Torque Device Technology
职业:iMPACT:利用新兴的自旋转移扭矩器件技术进行形而上学和基于概率的计算转型
- 批准号:
1553056 - 财政年份:2016
- 资助金额:
$ 35.42万 - 项目类别:
Continuing Grant
MRI: Development of a system for low temperature optical measurement of 3D magnon, plasmon and spin torque transfer dynamics.
MRI:开发用于 3D 磁振子、等离激元和自旋扭矩传递动力学低温光学测量的系统。
- 批准号:
1624976 - 财政年份:2016
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Spin Torque Transfer Driven Magnetotransport Phenomena in Magnetic Nano-elements.
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438578-2013 - 财政年份:2014
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Spin Torque Transfer Driven Magnetotransport Phenomena in Magnetic Nano-elements.
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Study on spin-transfer-torque switching by photocurrent
光电流自旋转移矩开关研究
- 批准号:
25790066 - 财政年份:2013
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EAGER: Preliminary Studies on Novel Four-Terminal Spin Transfer Torque Devices to Enable All-Magnetic Logic Circuits
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1146799 - 财政年份:2012
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