Silicon-based nanospintronics

硅基纳米自旋电子学

• 批准号: EP/H002359/1
• 负责人: Gabriel Aeppli
• 金额: $ 34.99万
• 依托单位: University College London
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2010
• 资助国家: 英国
• 起止时间: 2010 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FH002359%2F1
• 关键词: Silicon; based; nanospintronics

The spin of the electron is a fundamental quantum mechanical phenomenon that means it behaves like a small magnet. In normal electronic devices the spin is not relevant, because the operation occurs by the effect of electric fields on the electron charge. However, new kinds of device are being proposed that will make use of the spin direction to carry information, and these technologies are called spintonics . The other quantum attributes, spin and orbit, are not used because of the continuing success in miniaturization underlying the celebrated Moore's Laws for information technology. However, the increased energy dissipation and performance variability associated with smaller devices is spurring a search for alternative paradigms, and schemes where charges are stationary while spin and/or orbital currents flow are attracting great interest. The present proposal exploits the combination of Chinese excellence in advanced silicon nanofabrication and UK expertise in addressing spin and orbital degrees of freedom in silicon to move towards single spin manipulation and detection in silicon. It meets not only the requirements of the UK-China Nanospintronics Call, but also addresses major EPSRC signposted areas, including quantum coherence and silicon technology, both topics with high significance and potential impact. Exploration of silicon-based platforms for spintronics is important because we could exploit the far more extensive processing and fabrication knowledge for this semiconductor. At the same time, silicon provides great benefits for spintronics: it is an exceptionally stable environment to store atoms with well-defined spin states Our programme will scale down the current state-of-the-art of silicon spintronic devices towards the single spin limit; we will demonstrate quantum mechanical manipulation of spins and orbitals in nano-scale structures. At the same time as allowing addressing of single spins, the nanostructures will also enhance the properties of the material by reducing the phonon scattering that upsets device operation.

电子的自旋是一种基本的量子力学现象，这意味着它的行为就像一个小磁铁。在普通的电子器件中，自旋是不相关的，因为操作是通过电场对电子电荷的影响而发生的。然而，正在提出的新型设备将利用自旋方向来携带信息，这些技术被称为自旋电子学。其他量子属性，自旋和轨道，没有使用，因为在信息技术的著名的摩尔定律的基础上，微型化的持续成功。然而，与更小的设备相关的增加的能量耗散和性能可变性正在刺激对替代范例的搜索，并且其中电荷静止而自旋和/或轨道电流流动的方案吸引了极大的兴趣。目前的提案利用了中国在先进硅纳米纤维方面的卓越表现和英国在解决硅中自旋和轨道自由度方面的专业知识，以实现硅中的单自旋操纵和检测。它不仅符合中英纳米自旋电子学会议的要求，而且还涉及EPSRC的主要标志性领域，包括量子相干和硅技术，这两个主题都具有重要意义和潜在影响。探索自旋电子学的硅基平台是重要的，因为我们可以利用这种半导体更广泛的加工和制造知识。与此同时，硅为自旋电子学提供了巨大的好处：它是一个非常稳定的环境，可以存储具有明确定义的自旋状态的原子。我们的计划将缩小目前最先进的硅自旋电子器件的规模，使其接近单自旋极限;我们将展示纳米尺度结构中自旋和轨道的量子力学操纵。在允许单自旋寻址的同时，纳米结构还将通过减少扰乱设备操作的声子散射来增强材料的特性。