Precursor Chemistry and the CVD of Transparent Conducting Oxides

透明导电氧化物的前驱体化学和 CVD

基本信息

  • 批准号:
    EP/K001515/1
  • 负责人:
  • 金额:
    $ 58.82万
  • 依托单位:
  • 依托单位国家:
    英国
  • 项目类别:
    Research Grant
  • 财政年份:
    2012
  • 资助国家:
    英国
  • 起止时间:
    2012 至 无数据
  • 项目状态:
    已结题

项目摘要

This project will involve the investigation of alternative precursors and deposition technologies in order to improve performance and enable next generation transparent conducting oxide (TCO) films to be developed. Indium tin oxide (ITO) is the current TCO of choice for most industrial applications but it has many limitations, such as modest conductivity (2000-4000 S/cm), a relatively low work function and some optical absorption in the blue-green spectral region. In addition, indium is expensive since it is in relatively short supply, which presents a significant challenge for larger-scale production of next generation photovolatic technologies and flat panel displays. It is therefore crucial to develop alternative TCO materials with no indium with improved optical and electrical properties. Alternatives to ITO include doped ZnO (ZnO:Al, ZnO:Ga, ZnO:SnO2) and doped SnO2 (SnO2:Sb, SnO2:F, ZnO-SnO2) and many of these have been investigated in their bulk form. However, studies of some of these materials as thin films is limited and for many of the applications thin films are required. An ideal method for preparing thin fims for large scale applications is chemical vapour deposition (CVD) given that films with good uniformity and compositional control, large area growth and step coverage can be achieved. However, for a successful CVD process, a volatile precursor is necessary which is prefereably a liquid or low metling solid for atmospheric pressure CVD or highly soluble for liquid based (aerosol assisted) CVD. Current precursors to TCO materials, particularly indium and zinc still suffer from chemical instability, poor reproducibility in the growth process and less than favourable vapour pressures and reactivity for film growth. This work aims to develop highly volatile and soluble precursors based on metal ketoiminates. The advantages of using the ketoiminate ligand include:- reactive complexes can be formed in high yield- complexes with a hign vapour pressure can be formed as monomeric species are isolated- thermal stability of the metal complexes can be increased by tuning the groups attached to the nitrogen atoms- the surface reaction between the metal precursor and the surface of the substrate can be enhanced due to the high chemical reactivity of the complexes.TCO materials to be investigated include doped-ZnO and doped-SnO2. We have the ability to lay down thin films using a new combinatorial aerosol-assisted (AA)CVD reactor for solution based and also a combinatorial APCVD reactor to make films of graded composition. This new reactor enables upto 400 different compositions to be made on a single plate in one CVD experiment. This is important as it will enable us to rapidly screen composition space make idealised and optimised compositions for TCO applications. This combined approach will enable us to investigate different combinations and go towards achieving the next generation TCO materials.
该项目将涉及替代前体和沉积技术的研究,以提高性能并开发下一代透明导电氧化物(TCO)薄膜。氧化铟锡 (ITO) 是目前大多数工业应用选择的 TCO,但它有许多局限性,例如适度的电导率 (2000-4000 S/cm)、相对较低的功函数以及蓝绿光谱区域的一些光学吸收。此外,由于供应相对短缺,铟价格昂贵,这对下一代光伏技术和平板显示器的大规模生产提出了重大挑战。因此,开发不含铟且光学和电学性能得到改善的替代 TCO 材料至关重要。 ITO 的替代品包括掺杂 ZnO(ZnO:Al、ZnO:Ga、ZnO:SnO2)和掺杂 SnO2(SnO2:Sb、SnO2:F、ZnO-SnO2),其中许多材料已以块状形式进行了研究。然而,对这些材料中的一些作为薄膜的研究是有限的,并且许多应用都需要薄膜。制备大规模应用薄膜的理想方法是化学气相沉积(CVD),因为可以获得具有良好均匀性和成分控制、大面积生长和阶梯覆盖的薄膜。然而,对于成功的CVD工艺,挥发性前体是必要的,对于常压CVD,其优选是液体或低熔点固体,或者对于基于液体的(气溶胶辅助)CVD,其优选是高度可溶的。当前TCO材料的前体,特别是铟和锌,仍然存在化学不稳定、生长过程再现性差以及薄膜生长的蒸气压和反应性较差的问题。这项工作旨在开发基于金属酮亚胺盐的高挥发性和可溶性前体。使用酮亚胺化物配体的优点包括: - 可以高产率形成反应性配合物 - 当单体物质被分离时,可以形成具有高蒸气压的配合物 - 通过调整连接到氮原子的基团可以提高金属配合物的热稳定性 - 由于配合物的高化学反应性,可以增强金属前体和基材表面之间的表面反应。 被研究的包括掺杂ZnO和掺杂SnO2。我们能够使用基于溶液的新型组合气溶胶辅助 (AA)CVD 反应器以及组合 APCVD 反应器来沉积薄膜,以制造分级成分的薄膜。这种新型反应器能够在一次 CVD 实验中在一块板上制备多达 400 种不同的组合物。这很重要,因为它将使我们能够快速筛选构图空间,为 TCO 应用制作理想化和优化的构图。这种组合方法将使我们能够研究不同的组合,并致力于实现下一代 TCO 材料。

项目成果

期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Magnesium Oxide Thin Films with Tunable Crystallographic Preferred Orientation via Aerosol-Assisted CVD
通过气溶胶辅助 CVD 制备具有可调晶体择优取向的氧化镁薄膜
  • DOI:
    10.1002/cvde.201507156
  • 发表时间:
    2015
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Ponja S
  • 通讯作者:
    Ponja S
Aerosol-Assisted Chemical Vapour Deposition of Transparent Zinc Gallate Films
  • DOI:
    10.1002/cplu.201402037
  • 发表时间:
    2014-07-01
  • 期刊:
  • 影响因子:
    3.4
  • 作者:
    Knapp, Caroline E.;Manzi, Joe A.;Carmalt, Claire J.
  • 通讯作者:
    Carmalt, Claire J.
Transparent conductive aluminium and fluorine co-doped zinc oxide films via aerosol assisted chemical vapour deposition
  • DOI:
    10.1039/c4ra09997d
  • 发表时间:
    2014-01-01
  • 期刊:
  • 影响因子:
    3.9
  • 作者:
    Ponja, Sapna D.;Sathasivam, Sanjayan;Carmalt, Claire J.
  • 通讯作者:
    Carmalt, Claire J.
Influencing FTO thin film growth with thin seeding layers: a route to microstructural modification
  • DOI:
    10.1039/c5tc02144h
  • 发表时间:
    2015-01-01
  • 期刊:
  • 影响因子:
    6.4
  • 作者:
    Noor, Nuruzzaman;Chew, Clair K. T.;Parkin, Ivan P.
  • 通讯作者:
    Parkin, Ivan P.
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Claire Jane Carmalt其他文献

Claire Jane Carmalt的其他文献

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{{ truncateString('Claire Jane Carmalt', 18)}}的其他基金

Stain resistant paints from smart hydrophobic surfaces
来自智能疏水表面的防污涂料
  • 批准号:
    EP/N510051/1
  • 财政年份:
    2016
  • 资助金额:
    $ 58.82万
  • 项目类别:
    Research Grant
Sustainable Manufacturing of Transparent Conducting Oxide (TCO) Inks and Thin Films
透明导电氧化物 (TCO) 油墨和薄膜的可持续制造
  • 批准号:
    EP/L017709/1
  • 财政年份:
    2014
  • 资助金额:
    $ 58.82万
  • 项目类别:
    Research Grant
Molecular Precursors for the CVD of Gallium and Indium Oxides
用于 CVD 氧化镓和氧化铟的分子前体
  • 批准号:
    EP/F035675/1
  • 财政年份:
    2008
  • 资助金额:
    $ 58.82万
  • 项目类别:
    Research Grant

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