Continuously tunable Dual Color DFB Laser System for characterization of epitaxial graphene devices at THz frequencies

连续可调双色 DFB 激光系统，用于在太赫兹频率下表征外延石墨烯器件

• 批准号: EP/K016822/1
• 负责人: Vladimir Antonov
• 金额: $ 13.84万
• 依托单位: Royal Holloway University of London
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2013
• 资助国家: 英国
• 起止时间: 2013 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FK016822%2F1
• 关键词: Continuously; tunable; Dual; Color; DFB

Graphene is a new material with promising applications in high frequency electronics and optoelectronics. Potentially, active graphene devices can reach operation speed of picoseconds. High frequency transistors and opto- electronic modulators have been reported however in a modest frequency range limited only by tens of gigahertz. A study of graphene at terahertz frequencies, being a challenging task, is of very important, both fundamentally, from the point of interaction of high frequency radiation with a new electronic system, and practically, since terahertz range itself is a rewarding field of deep space observation, security and health screening.The main objective of the proposed research is to build new capabilities of far- and mid- infrared optoelectronics technology based on epitaxial graphene. RHUL carries an extensive research in a field of THz technology, including detectors, sources and optics, with the aim at THz imager for security and health screening. There are in place a wide range of technologies and expertise: nanofabrication facilities, low temperature experimental set up, THz spectroscopic equipment, sensitive THz detectors and sources. Semiconductor hetero-structures with high mobility 2DEG and superconductors were the prime materials of the terahertz research until recently. We expand this with a new material, the epitaxial graphene. The epitaxial graphene (G/SiC) is produced at standard SiC wafer by annealing in Ar atmosphere. In contrast to the flakes of graphene widely used for research, the G/SiC has a macroscopic size, and it is compatible with industrial nanofabrication technology. The SiC/G has a strong coupling to the SiC substrate, which makes it different from the exfoliated graphene: it has a non-vanishing n-doping, proximity of substrate affects optical properties of graphene, particular in the mid- infrared range where SiC has a sharp absorption edge. We aim to utilize these properties in a new generation of devices, like fast optical switches, generators and detectors of high frequency radiation. Study of high frequency operation of epitaxial graphene is in progress already in collaboration with National Physical Laboratory. We investigate plasmon and magneto-plasmon response of the G/SiC in application to mid and far-infrared detectors and sources. Theoretical support is provided from a leading graphene research group at Lancaster University. The work involves international collaboration with Chalmers University in Sweden and Tokyo University in Japan.We propose to upgrade our facilities with tunable THz laser source of bandwidth from 0.1 to 2 THz with accuracy of 0.1 GHz. This source will boost our abilities in spectroscopy of the G/SiC based devices in THz range, as well as give us inside of the fundamental high frequency properties of the material. The platform will be available for the UK organisations involving in graphene research and development. NPL and UCL are partners in the project have a complementary graphene and THz facilities. A collaborative research on high frequency operation of graphene is in progress between three organisations, RHUL, NPL and UCL.

石墨烯是一种在高频电子学和光电子学领域具有广阔应用前景的新型材料。潜在地，活性石墨烯器件可以达到皮秒的操作速度。然而，据报道，高频晶体管和光电调制器的频率范围仅限于数十GHz。在太赫兹频率下对石墨烯的研究是一项具有挑战性的任务，从根本上讲，从高频辐射与新电子系统的相互作用的角度来看，以及实际上，由于太赫兹范围本身是深空观测的有益领域，安全和健康检查。拟议研究的主要目标是建立远中端的新能力，基于外延石墨烯的红外光电子技术。RHUL在THz技术领域进行了广泛的研究，包括探测器，光源和光学器件，旨在开发用于安全和健康筛查的THz成像仪。有广泛的技术和专业知识：纳米纤维设施，低温实验装置，太赫兹光谱设备，灵敏的太赫兹探测器和源。直到最近，具有高迁移率2DEG的半导体异质结构和超导体一直是太赫兹研究的主要材料。我们用一种新材料来扩展它，外延石墨烯。在标准SiC晶片上通过Ar气氛退火制备了外延石墨烯（G/SiC）。与广泛用于研究的石墨烯薄片相比，G/SiC具有宏观尺寸，并且与工业纳米纤维技术兼容。SiC/G具有与SiC衬底的强耦合，这使得其不同于剥离的石墨烯：其具有非零的n掺杂，衬底的接近度影响石墨烯的光学性质，特别是在SiC具有尖锐吸收边缘的中红外范围内。我们的目标是在新一代设备中利用这些特性，如快速光学开关，高频辐射发生器和探测器。与国家物理实验室合作，对外延石墨烯的高频操作进行了研究。我们研究了G/SiC的等离子体和磁等离子体响应在中远红外探测器和光源中的应用。理论支持来自兰开斯特大学的一个领先的石墨烯研究小组。这项工作涉及到瑞典查尔默斯大学和日本东京大学的国际合作。我们建议用带宽为0.1到2 THz的可调谐THz激光源来升级我们的设备，精度为0.1 GHz。这个来源将提高我们在太赫兹范围内基于G/SiC器件的光谱学能力，并为我们提供材料的基本高频特性。该平台将提供给参与石墨烯研究和开发的英国组织。NPL和UCL是该项目的合作伙伴，拥有互补的石墨烯和THz设施。石墨烯高频操作的合作研究正在RHUL，NPL和UCL三个组织之间进行。

项目成果

Detection of Coherent Terahertz Radiation from a High-Temperature Superconductor Josephson Junction by a Semiconductor Quantum-Dot Detector

• DOI: 10.1103/physrevapplied.5.024010
• 发表时间: 2016-02
• 期刊: Physical review applied
• 影响因子: 4.6
• 作者: R. Shaikhaidarov;V. Antonov;A. Casey;A. Kalaboukhov;S. Kubatkin;Y. Harada;K. Onomitsu;A. Tzalenchuk;A. Sobolev

Phase coherence and energy relaxation in epitaxial graphene under microwave radiation

• DOI: 10.1063/1.4819726
• 发表时间: 2013-08-26
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Eless, V.;Yager, T.;Antonov, V.
• 通讯作者: Antonov, V.