ZnO MESFETs for application to Intelligent Windows
ZnO MESFETs for application to Intelligent Windows
批准号:
EP/K018884/1
负责人:
Steve Hall
金额:
$76.31万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2013
资助国家:
英国
项目状态:
已结题
起止时间:
2013 至 --
中文摘要
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英文摘要
The central aim of the research is to produce electronic circuits into glass windows for visual display, monitoring and control purposes: 'transparent electronics'. The circuits are made from a very thin semiconductor-like material (ZnO: zinc oxide) and thin metal contacts. The materials are so thin (10's nm) that most of the light passes straight through. Thus 'intelligence' can be built into the window. The material used also offers optical advantages in that is 'low emissivity'; its refractive index serves to enhance the capture of solar energy and reduces the heat loss from the building. The added-value of introducing electronics capability into the glass coatings can open up a new generation of glass windows in buildings, cars and aeroplanes; especially for 'heads-up' displays. The last application is currently available using films containing indium. This is a very expensive material so its replacement with ZnO will bring down the cost and so open up the availabilty of such products. ZnO also has low-toxicity. The devices we will use are called metal-semiconductor field effect transistor (MESFET). These devices are chosen because they are very simple and easy to fabricate. They also operate at lower voltages than the more commonly used metal-oxide field effect transistor (MOSFET), which is found in computers and phones etc. The use of MESFETs avoids the need to develop a gate oxide technology which is very challenging technologically. The downside is that the digital circuits need to more complicated and so take up more space. However, the footprint of the circuits is less critical that for Si based chips, as the electronics is on large area panels. The project is then concerned with the establishment of a MESFET fabrication process, device design for the intended circuitry and finally design and realisation of basic circuit blocks and gate arrays.
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DOI:
10.1016/j.radphyschem.2019.108644
发表时间:
2020-05
期刊:
Radiation Physics and Chemistry
影响因子:
2.9
作者:
[Fang Yuxiao;Chun Zhao;S. Hall;I. Mitrovic;Wangying Xu;Li Yang-;Zhao Tianshi;Li Qihan;Cezhou Zhao]
通讯作者:
Fang Yuxiao;Chun Zhao;S. Hall;I. Mitrovic;Wangying Xu;Li Yang-;Zhao Tianshi;Li Qihan;Cezhou Zhao
DOI:
10.1016/j.radphyschem.2021.109899
发表时间:
2021-11
期刊:
Radiation Physics and Chemistry
影响因子:
2.9
作者:
[Yuxiao Fang;Wangying Xu;T. Zhao;I. Mitrovic;Li Yang;Chun Zhao;Cezhou Zhao]
通讯作者:
Yuxiao Fang;Wangying Xu;T. Zhao;I. Mitrovic;Li Yang;Chun Zhao;Cezhou Zhao
Zinc oxide based transparent electronics
氧化锌基透明电子产品
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[Hall S (invited)]
通讯作者:
Hall S (invited)
DOI:
10.1016/j.jallcom.2016.02.215
发表时间:
2016-07-15
期刊:
JOURNAL OF ALLOYS AND COMPOUNDS
影响因子:
6.2
作者:
[Jin, Jidong, Zhang, Jiawei, Song, Aimin]
通讯作者:
Song, Aimin
DOI:
10.1016/j.mee.2019.111113
发表时间:
2019-09
期刊:
Microelectronic Engineering
影响因子:
2.3
作者:
[Fang Yuxiao-;Cezhou Zhao;I. Mitrovic;S. Hall;Li Yang;Chun Zhao]
通讯作者:
Fang Yuxiao-;Cezhou Zhao;I. Mitrovic;S. Hall;Li Yang;Chun Zhao
共 8 条
High permittivity dielectrics on Ge for end of Roadmap application
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批准号:EP/I012907/1
-
项目类别:Research Grant
-
资助金额:$68.41万
-
财政年份:2011
-
负责人:Steve Hall
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依托单位:
A Biologically Plausible Spiking Neuron in Hardware
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批准号:EP/F05551X/1
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项目类别:Research Grant
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资助金额:$55.12万
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财政年份:2008
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负责人:Steve Hall
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依托单位:
Feasibility of Novel Deca-nanometer vertical MOSFETs for low-cost Radio Frequency Application
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批准号:EP/E012078/1
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项目类别:Research Grant
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资助金额:$79.62万
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财政年份:2007
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负责人:Steve Hall
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依托单位:
国内基金
海外基金
高功率密度SiC MESFETs器件与三维电热解析模型研究
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批准号:61076072
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项目类别:面上项目
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资助金额:35.0万元
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批准年份:2010
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负责人:邓小川
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依托单位: