ZnO MESFETs for application to Intelligent Windows

用于智能窗户应用的 ZnO MESFET

基本信息

  • 批准号:
    EP/K018884/1
  • 负责人:
  • 金额:
    $ 76.31万
  • 依托单位:
  • 依托单位国家:
    英国
  • 项目类别:
    Research Grant
  • 财政年份:
    2013
  • 资助国家:
    英国
  • 起止时间:
    2013 至 无数据
  • 项目状态:
    已结题

项目摘要

The central aim of the research is to produce electronic circuits into glass windows for visual display, monitoring and control purposes: 'transparent electronics'. The circuits are made from a very thin semiconductor-like material (ZnO: zinc oxide) and thin metal contacts. The materials are so thin (10's nm) that most of the light passes straight through. Thus 'intelligence' can be built into the window. The material used also offers optical advantages in that is 'low emissivity'; its refractive index serves to enhance the capture of solar energy and reduces the heat loss from the building. The added-value of introducing electronics capability into the glass coatings can open up a new generation of glass windows in buildings, cars and aeroplanes; especially for 'heads-up' displays. The last application is currently available using films containing indium. This is a very expensive material so its replacement with ZnO will bring down the cost and so open up the availabilty of such products. ZnO also has low-toxicity. The devices we will use are called metal-semiconductor field effect transistor (MESFET). These devices are chosen because they are very simple and easy to fabricate. They also operate at lower voltages than the more commonly used metal-oxide field effect transistor (MOSFET), which is found in computers and phones etc. The use of MESFETs avoids the need to develop a gate oxide technology which is very challenging technologically. The downside is that the digital circuits need to more complicated and so take up more space. However, the footprint of the circuits is less critical that for Si based chips, as the electronics is on large area panels. The project is then concerned with the establishment of a MESFET fabrication process, device design for the intended circuitry and finally design and realisation of basic circuit blocks and gate arrays.
这项研究的主要目的是将电子电路制作成玻璃窗,用于视觉显示、监测和控制目的:“透明电子”。电路是由一个非常薄的电容器状材料(ZnO:氧化锌)和薄的金属接触。这些材料非常薄(10纳米),大部分光线都可以直接通过。因此,“智能”可以内置到窗口中。所使用的材料还具有“低发射率”的光学优势;其折射率有助于提高太阳能的捕获并减少建筑物的热损失。在玻璃涂层中引入电子功能的附加值可以在建筑物、汽车和飞机中开辟新一代玻璃窗;特别是用于“抬头”显示器。最后一种应用目前可使用含铟的薄膜。这是一种非常昂贵的材料,因此用ZnO替代它将降低成本,从而打开此类产品的可用性。ZnO也具有低毒性。我们将使用的器件称为金属半导体场效应晶体管(MESFET)。选择这些器件是因为它们非常简单且易于制造。它们的工作电压也比计算机和电话等中更常用的金属氧化物场效应晶体管(MOSFET)低。使用MOSFET避免了开发栅极氧化物技术的需要,而栅极氧化物技术在技术上非常具有挑战性。缺点是数字电路需要更复杂,因此占用更多空间。然而,电路的占地面积不像基于Si的芯片那么重要,因为电子器件在大面积面板上。然后,该项目涉及MESFET制造工艺的建立,预期电路的器件设计,以及基本电路模块和门阵列的设计和实现。

项目成果

期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique
  • DOI:
    10.1016/j.radphyschem.2019.108644
  • 发表时间:
    2020-05
  • 期刊:
  • 影响因子:
    2.9
  • 作者:
    Fang Yuxiao;Chun Zhao;S. Hall;I. Mitrovic;Wangying Xu;Li Yang-;Zhao Tianshi;Li Qihan;Cezhou Zhao
  • 通讯作者:
    Fang Yuxiao;Chun Zhao;S. Hall;I. Mitrovic;Wangying Xu;Li Yang-;Zhao Tianshi;Li Qihan;Cezhou Zhao
A promising method to improve the bias-stress and biased-radiation-stress stabilities of solution-processed AlOx thin films
  • DOI:
    10.1016/j.radphyschem.2021.109899
  • 发表时间:
    2021-11
  • 期刊:
  • 影响因子:
    2.9
  • 作者:
    Yuxiao Fang;Wangying Xu;T. Zhao;I. Mitrovic;Li Yang;Chun Zhao;Cezhou Zhao
  • 通讯作者:
    Yuxiao Fang;Wangying Xu;T. Zhao;I. Mitrovic;Li Yang;Chun Zhao;Cezhou Zhao
Zinc oxide based transparent electronics
氧化锌基透明电子产品
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Hall S (invited)
  • 通讯作者:
    Hall S (invited)
Effects of annealing conditions on resistive switching characteristics of SnOx thin films
  • DOI:
    10.1016/j.jallcom.2016.02.215
  • 发表时间:
    2016-07-15
  • 期刊:
  • 影响因子:
    6.2
  • 作者:
    Jin, Jidong;Zhang, Jiawei;Song, Aimin
  • 通讯作者:
    Song, Aimin
A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density
  • DOI:
    10.1088/1361-6463/aaa4a2
  • 发表时间:
    2018-01
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Jidong Jin;Jiawei Zhang;A. Shaw;V. Kudina;I. Mitrovic;J. S. Wrench;P. Chalker;C. Balocco;A. Song;S. Hall
  • 通讯作者:
    Jidong Jin;Jiawei Zhang;A. Shaw;V. Kudina;I. Mitrovic;J. S. Wrench;P. Chalker;C. Balocco;A. Song;S. Hall
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Steve Hall其他文献

Shock and Awe: On Progressive Minimalism and Retreatism, and the New Ultra-Realism
  • DOI:
    10.1007/s10612-019-09431-1
  • 发表时间:
    2019-03-20
  • 期刊:
  • 影响因子:
    1.100
  • 作者:
    Simon Winlow;Steve Hall
  • 通讯作者:
    Steve Hall
Mining Engineering Education Pre and Post the COVID Pandemic and Some Ideas for the Future
新冠病毒大流行前后的采矿工程教育以及对未来的一些想法
  • DOI:
    10.1051/e3sconf/202127801003
  • 发表时间:
    2021
  • 期刊:
  • 影响因子:
    0
  • 作者:
    A. Spearing;Jixiong Zhang;Steve Hall;Liqiang Ma
  • 通讯作者:
    Liqiang Ma
Effect of lightly doped drain on the electrical characteristics of CMOS compatible vertical MOSFETs
轻掺杂漏极对 CMOS 兼容垂直 MOSFET 电特性的影响
Study of neutron sensitivity in CMS–RPC using MC simulation for two different setups
  • DOI:
    10.1016/j.nima.2005.10.004
  • 发表时间:
    2006-01-01
  • 期刊:
  • 影响因子:
  • 作者:
    M. Jamil;J.T. Rhee;Steve Hall;Christopher Chun;Y.J. Jeon
  • 通讯作者:
    Y.J. Jeon
Receiving shadows: governance and liminality in the night-time economy.
接收阴影:夜间经济中的治理和限制。
  • DOI:
    10.1080/00071310020015334
  • 发表时间:
    2000
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Dick Hobbs;S. Lister;Phil Hadfield;S. Winlow;Steve Hall
  • 通讯作者:
    Steve Hall

Steve Hall的其他文献

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{{ truncateString('Steve Hall', 18)}}的其他基金

High permittivity dielectrics on Ge for end of Roadmap application
Ge 上的高介电常数电介质用于路线图应用的结束
  • 批准号:
    EP/I012907/1
  • 财政年份:
    2011
  • 资助金额:
    $ 76.31万
  • 项目类别:
    Research Grant
A Biologically Plausible Spiking Neuron in Hardware
硬件中生物学上合理的尖峰神经元
  • 批准号:
    EP/F05551X/1
  • 财政年份:
    2008
  • 资助金额:
    $ 76.31万
  • 项目类别:
    Research Grant
Feasibility of Novel Deca-nanometer vertical MOSFETs for low-cost Radio Frequency Application
新型十纳米垂直 MOSFET 用于低成本射频应用的可行性
  • 批准号:
    EP/E012078/1
  • 财政年份:
    2007
  • 资助金额:
    $ 76.31万
  • 项目类别:
    Research Grant

相似国自然基金

高功率密度SiC MESFETs器件与三维电热解析模型研究
  • 批准号:
    61076072
  • 批准年份:
    2010
  • 资助金额:
    35.0 万元
  • 项目类别:
    面上项目

相似海外基金

Optimisation par essaims particulaires appliquée aux systèmes dynamique pour la modélisation de MESFETs
MESFET 建模的动态系统优化
  • 批准号:
    427851-2012
  • 财政年份:
    2012
  • 资助金额:
    $ 76.31万
  • 项目类别:
    Alexander Graham Bell Canada Graduate Scholarships - Master's
Fabrication of InP-based high-speed integrated circuits using MESFETs with high Schottky barrier height
使用具有高肖特基势垒高度的 MESFET 制造 InP 基高速集成电路
  • 批准号:
    07555093
  • 财政年份:
    1995
  • 资助金额:
    $ 76.31万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Supercomputer Initiation: Vectorized Transient Simulation of GaAs MESFETs
超级计算机启动:GaAs MESFET 的矢量化瞬态仿真
  • 批准号:
    8515073
  • 财政年份:
    1985
  • 资助金额:
    $ 76.31万
  • 项目类别:
    Standard Grant
Nonlinear Modeling and Characterization of Gallium Arsenide Mesfets and Related Devices
砷化镓 Mesfets 及相关器件的非线性建模和表征
  • 批准号:
    8507567
  • 财政年份:
    1985
  • 资助金额:
    $ 76.31万
  • 项目类别:
    Continuing Grant
Optical Microwave Interactions in Mesfets and Impatts
Mesfets 和 Impatts 中的光学微波相互作用
  • 批准号:
    7924399
  • 财政年份:
    1980
  • 资助金额:
    $ 76.31万
  • 项目类别:
    Continuing Grant
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