Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal)

超越蓝色：氮化物的新视野（平台资助续订）

• 批准号: EP/M010589/1
• 负责人: Rachel Oliver
• 金额: $ 124.78万
• 依托单位: University of Cambridge
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2015
• 资助国家: 英国
• 起止时间: 2015 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FM010589%2F1
• 关键词: Beyond; Blue; New; Horizons; Nitrides

Our research is based on gallium nitride and its alloys, an amazing family of materials which can emit light over a wide range of colours - from the infra-red (IR) to the ultra-violet (UV). Already these materials are widely used in light emitting devices that are part of our everyday lives, perhaps most commonly in blue light emitting diodes (LEDs) and laser diodes (LDs). The LDs are at the heart of the blu-ray HD-DVD player, whilst the blue LEDs are combined with phosphors that emit other colours of light to produce white light. Such white LEDs are now very common in bicycle lights, torches and back-lighting for displays on portable electronic devices from mobile phones to tablet computers.Cambridge and Manchester have been collaborating on materials for blue LEDs for over ten years. Our research has led to step changes in the understanding of the basic materials science and physics of the light emitting materials leading to improved LED efficiency. Also we have pioneered lower cost methods for the growth of the gallium nitride crystals used in LEDs which have been commercialised, and are currently being exploited by a UK company, Plessey, who are fabricating these devices at their UK factory in Plymouth. Whilst we aim to continue to improve both the performance and cost of our blue LED technology in collaboration with our industrial partners, enabling new applications, e.g. in health care systems, we are now looking beyond the blue LED to other applications of gallium nitride such as devices that will emit light in the green and UV parts of the spectrum. Currently nitride devices emitting in the green and UV have much lower efficiencies than blue LEDs, and this limitation prevents the full exploitation of the nitrides across the whole spectrum. Applying the successful Cambridge-Manchester approach of understanding the basic science underlying the materials' properties, and using this to drive device development, we aim to produce green LEDs for application in displays and in high quality white lighting for homes and offices. Perhaps even more significantly, UV LEDs could be a low-energy way to purify drinking water, which could save millions of lives in the developing worlds, and we are considering innovative approaches to the development of these devices. Looking beyond LEDs, we will carry out research on LDs and even single photon sources. These latter devices, which emit one -and only one - photon on demand, are an enabling technology for quantum cryptography and quantum computation. We are already world leaders in the design and fabrication of blue single photon sources. The horizons we wish to explore are not necessarily new colours but devices with astounding new capabilities, such as the emission of pairs of entangled photons. Entanglement - which Albert Einstein referred to as "spooky action at a distance" - is a peculiar phenomenon by which changes made to one of the entangled pair of particles affect the other, even if the two are many miles apart. Entanglement can be used to achieve totally secure transfer of information. Gallium nitride can also be used in electronic devices, and so another emerging research theme at Cambridge and Manchester is the development of nitride transistors which will reduce the energy wasted as heat in high power applications such as computer power supplies, motor drives or power inverters of photovoltaic systems.Overall, our research has the potential to provide clean water for millions, vastly reduce energy consumption and greenhouse gas emissions and to enable totally secure communications but there are many new applications on the horizon for GaN, and we hope that this platform grant will help us to keep the UK at the forefront of this outstanding developing technology.

我们的研究基于氮化镓及其合金，这是一个令人惊叹的材料家族，可以发射从红外线(IR)到紫外线(UV)的各种颜色的光。这些材料已经被广泛用于发光设备，这些设备是我们日常生活的一部分，也许最常见的是蓝光发光二极管(LED)和激光二极管(LD)。LD是蓝光HD-DVD播放机的核心，而蓝色LED与发出其他颜色光的荧光粉结合在一起，产生白光。这种白色LED现在在自行车灯、手电筒和便携式电子设备(从手机到平板电脑)显示器的背光中非常常见。剑桥和曼彻斯特在蓝色LED材料方面的合作已有十多年。我们的研究使人们对发光材料的基本材料科学和物理学的理解逐步改变，从而提高了LED的效率。此外，我们还率先采用了低成本的方法来生长用于LED的氮化镓晶体，这些晶体已经商业化，目前正被英国公司Plessey开发，他们正在普利茅斯的英国工厂制造这些设备。虽然我们的目标是与我们的工业合作伙伴合作，继续提高我们的蓝色LED技术的性能和成本，使其能够实现新的应用，例如在医疗保健系统中，但我们现在正在将目光从蓝色LED转向氮化镓的其他应用，例如在绿色和紫外光部分发光的设备。目前，在绿色和紫外光下发射的氮化物器件的效率远低于蓝色LED，这一限制阻碍了整个光谱范围内氮化物的充分利用。应用剑桥-曼彻斯特成功的方法，了解材料性质背后的基础科学，并利用这一方法来推动设备开发，我们的目标是生产绿色LED，用于显示器和家庭和办公室的高质量白色照明。也许更重要的是，紫外线LED可能是一种低能耗的饮用水净化方式，可以拯救发展中国家数百万人的生命，我们正在考虑开发这些设备的创新方法。展望LED之外，我们将开展LD甚至单光子源的研究。后一种设备按需发射一个且只有一个光子，是量子密码学和量子计算的一种使能技术。我们在蓝光单光子源的设计和制造方面已经处于世界领先地位。我们希望探索的视野不一定是新的颜色，而是具有惊人新能力的设备，例如发射一对纠缠的光子。纠缠是一种奇怪的现象，通过这种现象，即使两个粒子相距数英里，纠缠对中的一个粒子所做的改变也会影响另一个粒子。阿尔伯特·爱因斯坦将这种现象称为“远距离的诡异行为”。纠缠可以用来实现完全安全的信息传输。氮化镓也可以用于电子设备，因此剑桥和曼彻斯特的另一个新兴研究主题是氮化物晶体管的开发，这种晶体管将减少在计算机电源、电机驱动器或光伏系统的电源逆变器等大功率应用中因热而浪费的能量。总体而言，我们的研究有潜力为数百万人提供清洁水，极大地减少能源消耗和温室气体排放，并实现完全安全的通信，但GaN有许多新的应用前景，我们希望这一平台拨款将帮助我们保持在这一杰出开发技术的前沿。

项目成果

Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells.

• DOI: 10.1021/acsphotonics.3c00355
• 发表时间: 2023-08-16
• 期刊: ACS PHOTONICS
• 影响因子: 7
• 作者: Barrett, R. M.;McMahon, J. M.;Ahumada-Lazo, R.;Alanis, J. A.;Parkinson, P.;Schulz, S.;Kappers, M. J.;Oliver, R. A.;Binks, D.
• 通讯作者: Binks, D.

A single emitting layer white OLED based on exciplex interface emission

• DOI: 10.1039/c6tc00750c
• 发表时间: 2016-01-01
• 期刊: JOURNAL OF MATERIALS CHEMISTRY C
• 影响因子: 6.4
• 作者: Angioni, E.;Chapran, M.;Skabara, P. J.
• 通讯作者: Skabara, P. J.

Enhanced excitonic nature of MAPbBr3 nanocrystals in nanoporous GaN

纳米多孔 GaN 中 MAPbBr3 纳米晶体的增强激子性质

• DOI: 10.17863/cam.107518
• 发表时间: 2024
• 作者: Bai X

Cubic GaN and InGaN/GaN quantum wells

• DOI: 10.1063/5.0097558
• 发表时间: 2022-12
• 期刊: Applied Physics Reviews
• 影响因子: 15
• 作者: D. Binks;P. Dawson;R. Oliver;D. Wallis

Properties of GaN nanowires with ScxGa1-xN insertion

ScxGa1-xN 插入的 GaN 纳米线的特性

• DOI: 10.17863/cam.12421
• 发表时间: 2017
• 作者: Bao A