Non-polar nitride quantum dots for application in single photon sources
Non-polar nitride quantum dots for application in single photon sources
批准号:
EP/M011682/1
负责人:
Rachel Oliver
金额:
$63.34万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2015
资助国家:
英国
项目状态:
已结题
起止时间:
2015 至 --
中文摘要
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英文摘要
Physicists understand that light can be thought of as either a wave, or a stream of tiny particles called "photons". A photon is the smallest amount of light which can exist. Using single photons, we can encode information for cryptography and computing. Quantum cryptography using photons offers the ultimate in data security, and linear optical quantum computation provides the opportunity for massively parallel data processing. However, progress towards these applications is limited by the current performance of single photon sources. Such a device can reliably provide one - and only one - photon on demand. Using a dim conventional light source in place of a true single photon source always risks the possibility of emission of multiple photons, compromising the security of quantum cryptography and corrupting the performance of quantum computers. True single photon sources can be made using semiconductor quantum dots: tiny crystals with atom-like properties, whose very nature means that they emit a single photon upon optical or electrical excitation. Different semiconductor materials are being explored, including families of materials based on compounds of arsenic (the "arsenides") and on compounds of nitrogen (the "nitrides"). Of the two, the arsenides have been fairly widely studied, and can be used to produce efficient single photon sources, but with one major disadvantage: these devices only operate at very low temperatures: typically, 250 degrees below zero, or lower. The nitrides, on the other hand, have been used to demonstrate single photon emission at room temperature, which would obviously be much more convenient for real-world applications. However, this family of materials has been studied much less, and current devices are not very efficient and have a low rate of photon emission compared to the arsenides. Another difference between the arsenides and the nitrides is that whilst the former give red or infra-red light, the latter are currently most useful at the other end of the colour spectrum: in the green, blue and ultra-violet. (However, the nitrides do have potential for emission of almost any colour of light depending on the exact composition of the material used.) A team of researchers at Oxford and Cambridge Universities have recently invented a new way to grow nitride quantum dots which may help to overcome some of the disadvantages of the nitrides. By changing the orientation of the substrate crystal on which the quantum dots are grown, we have shown that the rate of photon emission could be increased by a factor of ten or more. Furthermore, initial studies suggest that these more efficient quantum dots also retain sufficiently good temperature stability that devices could be designed which can operate with on-chip cooling, which would be a practical solution for real applications. In this project, we aim to explore the properties of quantum dots grown in this new orientation, and develop the crystal growth techniques which allow them to be incorporated into practical devices, which we will then test. We hope to develop a practical quantum technology based on the discoveries we have made about these exciting nitride materials.
期刊论文(10)
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DOI:
10.3390/ma11091487
发表时间:
2018-08-21
期刊:
Materials (Basel, Switzerland)
影响因子:
--
作者:
[Griffin P, Zhu T, Oliver R]
通讯作者:
Oliver R
DOI:
10.1063/1.4954236
发表时间:
2016-06-20
期刊:
APPLIED PHYSICS LETTERS
影响因子:
4
作者:
[Davies, M. J., Dawson, P., Oliver, R. A.]
通讯作者:
Oliver, R. A.
DOI:
10.1063/1.5088205
发表时间:
2019-03-18
期刊:
APPLIED PHYSICS LETTERS
影响因子:
4
作者:
[Gao, Kang, Springbett, Helen, Holmes, Mark J.]
通讯作者:
Holmes, Mark J.
Properties of GaN nanowires with Sc x Ga 1 -x N insertion
Sc x Ga 1 -x N 插入的 GaN 纳米线的特性
DOI:
10.1002/pssb.201600740
发表时间:
2017
期刊:
physica status solidi (b)
影响因子:
--
作者:
[Bao A]
通讯作者:
Bao A
Structural characterization of porous GaN distributed Bragg reflectors using x-ray diffraction
使用 X 射线衍射表征多孔 GaN 分布式布拉格反射器的结构
DOI:
10.1063/1.5134143
发表时间:
2019
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[Griffin P]
通讯作者:
Griffin P
共 6 条
Segregation of alloy and dopant atoms at defects in nitride materials
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批准号:EP/Y004213/1
-
项目类别:Research Grant
-
资助金额:$60.42万
-
财政年份:2024
-
负责人:Rachel Oliver
-
依托单位:
Quantum GaN-O-Photonics
-
批准号:EP/X040348/1
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项目类别:Research Grant
-
资助金额:$57.18万
-
财政年份:2023
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-
依托单位:
NP2: Hybrid Nanoparticle-Nanoporous nitride materials as a novel precision manufacture route to optoelectronic devices
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资助金额:$25.76万
-
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-
依托单位:
Fast Switching Zincblende GaN LEDs
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EPSRC-FNR Collaborative Proposal: Radiative Efficiency in Advanced Sulfide Chalcopyrites for Solar Cells (REACh)
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Simulation software for modelling nitride-based quantum light sources
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-
项目类别:Research Grant
-
资助金额:$11.31万
-
财政年份:2018
-
负责人:Rachel Oliver
-
依托单位:
Time-resolved cathodoluminescence scanning electron microscope
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项目类别:Research Grant
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资助金额:$357.81万
-
财政年份:2018
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负责人:Rachel Oliver
-
依托单位:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
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批准号:EP/N017927/1
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项目类别:Research Grant
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资助金额:$55.42万
-
财政年份:2016
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负责人:Rachel Oliver
-
依托单位:
Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal)
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资助金额:$124.78万
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财政年份:2015
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负责人:Rachel Oliver
-
依托单位:
Study of semi-polar and non-polar nitride based structures for opto-electronic device applications
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批准号:EP/J003603/1
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项目类别:Research Grant
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资助金额:$71.45万
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财政年份:2012
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负责人:Rachel Oliver
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依托单位:
Materials World Network to Optimize the Growth of InGaN Quantum Dots within High Quality Optical Micro-Cavities
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批准号:EP/H047816/1
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项目类别:Research Grant
-
资助金额:$74.85万
-
财政年份:2011
-
负责人:Rachel Oliver
-
依托单位:
国内基金
海外基金
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