Pilot Manufacturing with Ultrafast Laser Plasma Implantation (ULPI)

使用超快激光等离子体注入 (ULPI) 进行试生产

• 批准号: EP/M022854/1
• 负责人: Gin Jose
• 金额: $ 153.33万
• 依托单位: University of Leeds
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2015
• 资助国家: 英国
• 起止时间: 2015 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FM022854%2F1
• 关键词: Pilot; Manufacturing; Ultrafast; Laser; Plasma

The Ultrafast Laser Plasma Implantation (ULPI) equipment will provide a pilot level research and manufacturing capability for advanced functional materials and surfaces, between the atomic and microscopic scales, . For this Leeds patented technique, we use lasers with a pulse duration in the femtosecond range which is capable of producing high density and high kinetic energy plasma for implantation into a substrate, as opposed to methods to produce surface coatings. The demonstration of concepts, IP and specifications for the pilot ULPI equipment have been developed through ongoing research at Leeds, using equipment originally designed for coatings via femtosecond pulsed laser deposition (fs-PLD), which was RCUK funded (EP/D048672/1). The strategic equipment proposal is aimed at creating a world first small-scale manufacturing capability for ULPI, surpassing many conventional surface modification techniques such as ion-exchange. Furthermore, ULPI can open new doors in the manufacture of advanced materials, where previously no options were available, for example with integrated photonic circuits on glass with active and passive functionalities. ULPI enables implantation of fs-laser generated plasma species into a variety of glass, semiconductor, metal and ceramic surfaces from custom ion/plasma source materials. These layers can be formed between 10's of nanometres to several micrometres in depth with well-defined sharp interfaces with substrates. This equipment will enable multi-functional hetero-epitaxial materials engineering, which will support not only integrated photonics, but also optoelectronics and electronic circuit fabrication. We are partnering with the Universities of Cambridge, York, Sheffield, Sheffield III-V centre, DSTL and 10 industries to achieve these aims. At present there is no photonic equivalent to CMOS circuit fabrication for enabling complex multi-functional devices and circuits on a chip, which is the field of photonic integration's main limitation. Our background research in ULPI of inorganic glasses into Silicon/Silica substrates has created a new opportunity for research on ULPI based materials and device fabrication by incorporating multi-target fs-laser ablation induced plasma, which eliminates the need for individual processing chambers and offers a new route to novel manufacturing procedures for the fabrication of PICs combined with standard electronic components which is the main aim of the linked research project SeaMatics (EP/M015165/1).A further aim of the pilot-ULPI facility is to scale up the fabrication for multi-functional materials with appropriate process monitoring and diagnostic tools to ensure excellent control over photonic, optoelectronic and electronic functions in-situ. While this equipment is for more advanced research into low TRL manufacturing projects, it is also valuable for the final stage TRLs of other more mature technologies which are on the verge of commercialisation.

超快激光等离子体注入（ULPI）设备将为原子和微观尺度之间的先进功能材料和表面提供试验级研究和制造能力。对于这种利兹专利技术，我们使用脉冲持续时间在飞秒范围内的激光器，其能够产生高密度和高动能等离子体，用于注入到基底中，而不是产生表面涂层的方法。通过在利兹进行的研究，已经开发了ULPI试验设备的概念、IP和规格的演示，使用最初设计用于通过飞秒脉冲激光沉积（fs-PLD）进行涂层的设备，该设备由RCUK资助（EP/D 048672/1）。该战略设备提案旨在为ULPI创造世界上第一个小规模制造能力，超越许多传统的表面改性技术，如离子交换。此外，ULPI可以在先进材料的制造中打开新的大门，而以前没有选择，例如具有有源和无源功能的玻璃上的集成光子电路。ULPI能够将飞秒激光产生的等离子体物质从定制离子/等离子体源材料注入到各种玻璃、半导体、金属和陶瓷表面。这些层可以形成在数十纳米到几微米的深度之间，具有与基底的明确的尖锐界面。该设备将实现多功能异质外延材料工程，不仅支持集成光子学，还支持光电子学和电子电路制造。我们正在与剑桥大学、约克大学、谢菲尔德大学、谢菲尔德III-V中心、DSTL和10个行业合作，以实现这些目标。目前，还没有一种与CMOS电路等效的光子学方法，可以在一个芯片上实现复杂的多功能器件和电路，这是光子集成领域的主要限制。我们在无机玻璃到硅/二氧化硅衬底中的ULPI的背景研究为ULPI基材料和器件制造的研究创造了新的机会，这消除了对单独处理室的需要，并提供了一种新的途径，用于制造与标准电子元件相结合的PIC的新的制造过程，这是链接的主要目的。ULPI试验设施的另一个目的是利用适当的工艺监测和诊断工具来扩大多功能材料的制造，以确保对原位光子、光电和电子功能的良好控制。虽然该设备用于对低TRL制造项目进行更先进的研究，但对于其他即将商业化的更成熟技术的最后阶段TRL也很有价值。

项目成果

Femtosecond laser plasma assisted rare-earth doping in silica for integrated optics

飞秒激光等离子体辅助硅中稀土掺杂用于集成光学

• 发表时间: 2015
• 作者: Chandrappan Jayakrishnan

Doping silica beyond limits with laser plasma for active photonic materials

• DOI: 10.1364/ome.5.002849
• 发表时间: 2015-12-01
• 期刊: OPTICAL MATERIALS EXPRESS
• 影响因子: 2.8
• 作者: Chandrappan, Jayakrishnan;Murray, Matthew;Jose, Gin
• 通讯作者: Jose, Gin

Erbium-doped glass nanoparticle embedded polymer thin films using femtosecond pulsed laser deposition

• DOI: 10.1364/ome.8.001997
• 发表时间: 2018-07
• 期刊: Optical Materials Express
• 影响因子: 2.8
• 作者: E. K. Barimah;M. Ziarko;N. Bamiedakis;I. White;R. Penty;G. Jose

Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures

• DOI: 10.1007/s00339-018-2286-x
• 发表时间: 2019-01-01
• 期刊: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
• 影响因子: 2.7
• 作者: Albarkaty, K. S.;Kumi-Barimah, E.;Chandrappan, J.
• 通讯作者: Chandrappan, J.

Target dependent femtosecond laser plasma implantation dynamics in enabling silica for high density erbium doping.

• DOI: 10.1038/srep14037
• 发表时间: 2015-09-15
• 期刊: Scientific reports
• 影响因子: 4.6
• 作者: Chandrappan J;Murray M;Kakkar T;Petrik P;Agocs E;Zolnai Z;Steenson DP;Jha A;Jose G
• 通讯作者: Jose G