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Semiconductor Quantum Photonics: Control of Spin, Exciton and Photon Interactions by Nano-Photonic Design

Semiconductor Quantum Photonics: Control of Spin, Exciton and Photon Interactions by Nano-Photonic Design
半导体量子光子学:通过纳米光子设计控制自旋、激子和光子相互作用
批准号:
EP/N031776/1
负责人:
Maurice Skolnick
金额:
$718.48万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2016
资助国家:
英国
项目状态:
已结题
起止时间:
2016 至 --

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中文摘要
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英文摘要
We seek to exploit the highly advantageous properties of III-V semiconductors to achieve agenda setting advances in the quantum science and technology of solid state materials. We work in the regime of next generation quantum effects such as superposition and entanglement, where III-V systems have many favourable attributes, including strong interaction with light, picosecond control times, and microsecond coherence times before the electron wavefunction is disturbed by the environment. We employ the principles of nano-photonic design to access new regimes of physics and potential long term applications. Many of these opportunities have only opened up in the last few years, due to conceptual and fabrication advances. The conceptual advances include the realisation that quantum emitters emit only in one direction if precisely positioned in an optical field, that wavepackets which propagate without scattering may be achieved by specific design of lattices, and that non-linearities are achievable at the level of one photon and that quantum blockade can be realised where one particle blocks the passage of a second. The time is now right to exploit these conceptual advances. We combine this with fabrication advances which allow for example reconfigurable devices to be realised, with on-chip control of electronic and photonic properties. We take advantage of the highly developed III-V fabrication technology, which underpins most present day solid-state light emitters, to achieve a variety of chip-based quantum physics and device demonstrations. Our headline goals include reconfigurable devices at the single photon level, a single photon logic gate based on the fully confined states in quantum dots positioned precisely in nano-photonic structures, and coupling of states by designed optical fields, taking advantage of the reconfigurable capability, to enhance or suppress optical processes. Quantum dots also have favourable spin (magnetic moments associated with electrons) properties. We plan to achieve spins connected together by photons in an on-chip geometry, a route towards a quantum network, and long term quantum computer applications. As well as quantum dots, III-V quantum wells interact strongly with light to form new particles termed polaritons. We propose to open the new field of topological polaritonics, where the nano-photonic design of lattices leads to states which are protected from scattering and where artificial magnetic fields are generated. This opens the way to new coupled states of matter which mimic the quantised Hall effects, but in a system with fundamentally different wavefunctions from electrons.Finally our programme also depends on excellent crystal growth. We target one of the main issues limiting long term scale up of quantum dot technologies, namely site control. We will employ two approaches, which involve a combination of patterning, cleaning and crystal growth to define precisely the quantum dot location, both based around the formation of pits to seed growth in predetermined locations. Success here will be a major step in bringing semiconductor quantum optics into line with the position enjoyed by the majority of established semiconductor technologies where scalable lithographic processes have been a defining feature of their impact.
期刊论文(10)
专著(0)
科研奖励(0)
会议论文
DOI: 10.1103/physrevb.95.165109
发表时间: 2017-04-06
期刊: PHYSICAL REVIEW B
影响因子: 3.7
作者: [Arkinstall, J., Teimourpour, M. H., Schomerus, H.]
通讯作者: Schomerus, H.
DOI: 10.1038/s41377-020-00351-2
发表时间: 2020-08-19
期刊: LIGHT-SCIENCE & APPLICATIONS
影响因子: 19.4
作者: [Bellec, Matthieu, Poli, Charles, Schomerus, Henning]
通讯作者: Schomerus, Henning
Emergence of highly linearly polarized interlayer exciton emission in MoSe$_2$/WSe$_2$ heterobilayers with transfer-induced layer corrugation
具有转移诱导层波纹的 MoSe$_2$/WSe$_2$ 异质双层中出现高度线性偏振的层间激子发射
DOI: 10.48550/arxiv.2004.05624
发表时间: 2020
期刊:
影响因子: --
作者: [Alexeev E]
通讯作者: Alexeev E
DOI: 10.1103/physrevlett.121.260501
发表时间: 2018-04
期刊: Physical review letters
影响因子: 8.6
作者: [S. Barkhofen;L. Lorz;Thomas Nitsche;C. Silberhorn;H. Schomerus]
通讯作者: S. Barkhofen;L. Lorz;Thomas Nitsche;C. Silberhorn;H. Schomerus
7
    Quantum Technology Capital: Epitaxy Cluster Tool to Enable Next-Generation Quantum Dots for Quantum Technology Applications
    • 批准号:
      EP/N01488X/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $279.16万
    • 财政年份:
      2016
    • 负责人:
      Maurice Skolnick
    • 依托单位:
    Semiconductor Integrated Quantum Optical Circuits
    • 批准号:
      EP/J007544/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $642.29万
    • 财政年份:
      2012
    • 负责人:
      Maurice Skolnick
    • 依托单位:
    Optical Control of Quantum States in Semiconductor Nanostructures
    • 批准号:
      EP/G001642/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $371.28万
    • 财政年份:
      2008
    • 负责人:
      Maurice Skolnick
    • 依托单位:
    Senior Visiting Fellowship: Photonic Crystal Research
    • 批准号:
      EP/D076145/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $3.06万
    • 财政年份:
      2006
    • 负责人:
      Maurice Skolnick
    • 依托单位:
    国内基金
    海外基金
    Research on Quantum Field Theory without a Lagrangian Description
    • 批准号:
      24ZR1403900
    • 项目类别:
      省市级项目
    • 资助金额:
      --
    • 批准年份:
      2024
    • 负责人:
      SATOSHI NAWATA
    • 依托单位:
    Simulation and certification of the ground state of many-body systems on quantum simulators
    • 批准号:
      --
    • 项目类别:
      --
    • 资助金额:
      40万元
    • 批准年份:
      2020
    • 负责人:
      Abolfazl Bayat
    • 依托单位:
    Mapping Quantum Chromodynamics by Nuclear Collisions at High and Moderate Energies
    • 批准号:
      11875153
    • 项目类别:
      面上项目
    • 资助金额:
      60.0万元
    • 批准年份:
      2018
    • 负责人:
      MARCO RUGGIERI
    • 依托单位: