Quantitative non-destructive nanoscale characterisation of advanced materials

先进材料的定量无损纳米级表征

• 批准号: EP/P015719/1
• 负责人: Ben Hourahine
• 金额: $ 107.91万
• 依托单位: University of Strathclyde
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FP015719%2F1
• 关键词: Quantitative; non; destructive; nanoscale; characterisation

To satisfy the performance requirements for near term developments in electronic and optoelectronic devices will require pioneering materials growth, device fabrication and advances in characterisation techniques. The imminent arrival of devices a few atoms thick that are based on lighter materials such as graphene or boron nitride and also advanced silicon and diamond nano-structures. These devices pose new challenges to the currently available techniques for producing and understanding the resulting devices and how they fail. Optimising the performance of such devices will require a detailed understanding of extended structural defects and their influence on the properties of technologically relevant materials. These defects include threading dislocations and grain boundaries, and are often electrically active and so are strongly detrimental to the efficiency and lifetimes of nano-scale devices (a single badly-behaved defect can cause catastrophic device failure). These defects are especially problematic for devices such as silicon solar cells, advanced ultraviolet light emitting diodes, and advanced silicon carbide and gallium nitride based high power devices (used for efficient switching of large electrical currents or for high power microwave telecoms). For graphene and similar modern 2D materials, grain boundaries have significant impact on their properties as they easily span the whole size of devices.Resolving all of these problems requires new characterisation techniques for imaging of extended defects which are simultaneously rapid to use, are non-destructive and are structurally definitive on the nanoscale. Electron channelling contrast imaging (ECCI) is an effective structural characterisation tool which allows rapid non-destructive visualisation of extended crystal defects in the scanning electron microscope. However ECCI is usually applied as a qualitative method of investigating nano-scale materials, has limitations on the smallest size features that it can resolve, and suffers from difficulties in interpreting the resulting images. This limits this technique's ability to work out the nature of defects in these advanced materials.We will make use of new developments in energy resolving electron detectors, new advances in the modelling of electron beams with solids and the knowledge and experience of our research team and partners, to obtain a 6 fold improvement in the spatial resolution of the ECCI technique. This new energy-filtered way of making ECCI measurements will radically improve the quality of the information that can be obtained with this technique. We will couple our new capabilities to accurately measure and interpret images of defects to other advanced characterisation techniques. This will enable ECCI to be adopted as the technique of choice for non-destructive quantitative structural characterisation of defects in a wide range of important materials and provide a new technique to analyse the role of extended defects in electronic device failure.

为了满足电子和光电器件近期发展的性能要求，将需要开拓性的材料生长、器件制造和表征技术的进步。几个原子厚的设备即将到来，这些设备基于更轻的材料，如石墨烯或氮化硼，以及先进的硅和金刚石纳米结构。这些器件对目前可用的用于生产和理解所得器件以及它们如何失效的技术提出了新的挑战。优化此类器件的性能将需要详细了解扩展的结构缺陷及其对技术相关材料性能的影响。这些缺陷包括螺纹位错和晶界，并且通常是电活性的，因此对纳米级器件的效率和寿命非常有害（单个表现不良的缺陷可能导致灾难性的器件故障）。这些缺陷对于诸如硅太阳能电池、先进的紫外发光二极管和先进的基于碳化硅和氮化镓的高功率器件（用于大电流的有效开关或用于高功率微波电信）的器件尤其成问题。对于石墨烯和类似的现代2D材料，晶界对它们的性能有着显著的影响，因为它们很容易跨越整个器件的尺寸。解决所有这些问题需要新的表征技术，用于扩展缺陷的成像，同时快速使用，非破坏性，并在纳米尺度上具有结构决定性。电子通道对比成像（ECCI）是一种有效的结构表征工具，它允许在扫描电子显微镜中快速非破坏性地观察扩展的晶体缺陷。然而，ECCI通常被应用为研究纳米尺度材料的定性方法，在它可以解决的最小尺寸特征上具有限制，并且在解释所得图像时存在困难。我们将利用能量分辨电子探测器的新发展、固体电子束建模的新进展以及我们研究团队和合作伙伴的知识和经验，将ECCI技术的空间分辨率提高6倍。这种进行ECCI测量的新的能量过滤方式将从根本上提高使用这种技术可以获得的信息的质量。我们将结合我们的新能力，以准确地测量和解释图像的缺陷，以其他先进的表征技术。这将使ECCI被采纳为非破坏性的定量结构表征的缺陷，在广泛的重要材料的技术选择，并提供了一种新的技术来分析电子器件故障中的扩展缺陷的作用。

项目成果

Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (112¯0) GaN

生长模板微图案对非极性(112×0)GaN缺陷减少和光学性能的影响

• DOI: 10.1088/1361-6463/abbc37
• 发表时间: 2020
• 期刊: Applied Physics
• 作者: Bruckbauer J

Topology-controlled Potts coarsening.

拓扑控制的 Potts 粗化。

• DOI: 10.1103/physreve.99.062142
• 发表时间: 2019
• 期刊: Physical review. E
• 作者: Denholm J

Universal behavior in finite 2D kinetic ferromagnets

有限二维动能铁磁体的普遍行为

• DOI: 10.48550/arxiv.1809.09523
• 发表时间: 2018
• 作者: Denholm J

Statistics of photon-subtracted and photon-added states

• DOI: 10.1103/physreva.98.013809
• 发表时间: 2018-07-05
• 期刊: PHYSICAL REVIEW A
• 影响因子: 2.9
• 作者: Barnett, Stephen M.;Ferenczi, Gergely;Speirits, Fiona C.
• 通讯作者: Speirits, Fiona C.

Luminescence behavior of semipolar (101¯1) InGaN/GaN "bow-tie" structures on patterned Si substrates

图案化 Si 衬底上半极性 (101×1) InGaN/GaN“领结”结构的发光行为

• DOI: 10.1063/1.5129049
• 发表时间: 2020
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Bruckbauer J