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Precision Manufacturing of Flexible CMOS

柔性CMOS精密制造

基本信息

批准号：
EP/P027032/1
负责人：
Judith Driscoll
金额：
$ 47.53万
依托单位：
University of Cambridge
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2017
资助国家：
英国
起止时间：
2017 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FP027032%2F1
关键词：
Precision Manufacturing Flexible CMOS

项目摘要

High quality, low temperature-grown thin film metal oxides are urgently needed for a wide range of emerging electronic applications relating to the Internet of Things. Numerous energy harvesting, generation and storage devices also rely on obtaining such films. The market is huge (>$100Bn) for such devices. However, manufacturing techniques cannot deliver the required high quality oxides simultaneously with the necessary low-temperature processing. The main focus of this proposal is to develop a manufacturing tool to rapidly synthesise, at low temperatures, high quality p-type oxides for flexible CMOS devices. Such devices are currently unavailable. The work will also have broad ramifications for the manufacturing of a wide range of oxide thin film applications beyond CMOS. The work is novel both in terms of the manufacturing tool (atmospheric vapour pressure spatial atomic layer deposition, AP-SALD) and the processing methodology (inducing surface quasi-liquids to strongly improve film crystallinity and carrier mobility). The tool and the process are together essential for enabling a step-change in the production of commercial flexible devices incorporating oxides. We will work closely with PragmatIC, a fast growing start-up in the area, who have committed both cash and in-kind support to the project as well as with Applied Materials, a large equipment manufacturer, the world leaders in industrial ALD, who are in an excellent position and also have interest in commercialising the AP-SALD manufacturing tool.

与物联网相关的各种新兴电子应用迫切需要高质量、低温生长的薄膜金属氧化物。许多能源采集、发电和存储设备也依赖于获得这样的薄膜。这类设备的市场规模巨大(约合1000亿美元)。然而，制造技术不能同时提供所需的高质量氧化物和必要的低温处理。这项提议的主要重点是开发一种制造工具，以在低温下快速合成用于柔性CMOS器件的高质量p型氧化物。这样的设备目前还不可用。这项工作还将对制造广泛的氧化物薄膜应用产生广泛的影响，而不仅仅是cmos。这项工作在制造工具(大气蒸气压力空间原子层沉积，AP-SALD)和加工方法(诱导表面准液体以显著提高薄膜结晶度和载流子迁移率)方面都是新颖的。该工具和工艺对于实现含有氧化物的商用柔性设备的生产的阶段性变化至关重要。我们将与该地区一家快速增长的初创企业务实公司以及大型设备制造商应用材料公司以及工业ALD领域的世界领先者应用材料公司密切合作，后者处于有利地位，也有兴趣将AP-Sald制造工具商业化。

项目成果

期刊论文数量（10）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing

DOI：
10.1016/j.apmt.2023.102033
发表时间：
2024-02
期刊：
Applied Materials Today
影响因子：
8.3
作者：
A. Frechilla;M. Napari;N. Strkalj;Eduardo Barriuso;Kham Niang;Markus Hellenbrand;Pavel Strichovanec;F. Simanjuntak;Guillermo Antorrena;Andrew Flewitt;C. Magén;Germán F. de la Fuente;J. MacManus‐Driscoll;L. Angurel;José A. Pardo
通讯作者：
A. Frechilla;M. Napari;N. Strkalj;Eduardo Barriuso;Kham Niang;Markus Hellenbrand;Pavel Strichovanec;F. Simanjuntak;Guillermo Antorrena;Andrew Flewitt;C. Magén;Germán F. de la Fuente;J. MacManus‐Driscoll;L. Angurel;José A. Pardo

Oxide transistors: unconventional architectures and their applications

DOI：
10.1117/12.2585755
发表时间：
2021-03
期刊：
影响因子：
0
作者：
E. Bestelink;K. Niang;Indrachapa Rajapakshe Mudiyanselage;Georgios Bairaktaris;David M. Frohlich;R. Sporea
通讯作者：
E. Bestelink;K. Niang;Indrachapa Rajapakshe Mudiyanselage;Georgios Bairaktaris;David M. Frohlich;R. Sporea

Atomic layer deposition of functional multicomponent oxides