Near Room Temperature Growth of Dilute Magnetic Semiconductor Oxides: Visiting Fellowship for Dr. Ying Lin Liu

稀磁半导体氧化物的近室温生长：刘英林博士的访问学者

• 批准号: EP/D039894/1
• 负责人: Judith Driscoll
• 金额: $ 7.47万
• 依托单位: University of Cambridge
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2006
• 资助国家: 英国
• 起止时间: 2006 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FD039894%2F1
• 关键词: Near; Room; Temperature; Growth; Dilute

Dilute magnetic semiconductors (DMS) represent a fascinating new class of magnetic materials. They are made by adding small amounts of magnetic materials to semiconductors. Sometimes, it seems that the magnetism arises without such magnetic additions and is related to defects (e.g. when the crystals have missing atoms) in the semiconductors. New Physics is required to explain the DMS mechanism. In this proposal, we are interested in oxides which have potential for applications at room temperature (e.g. to be used in new components in computers). We will study near-room temperature electrochemical growth of films which we find consistently produce the DMS effect. Indeed, electrochemistry is a new way to grow such DMS oxides and it is hoped that by studying the materials made by this method we will understand more about the DMS mechanism.

稀磁半导体（DMS）是一种新型的磁性材料。它们是通过在半导体中添加少量磁性材料制成的。有时，似乎磁性的产生没有这样的磁性添加，并且与半导体中的缺陷有关（例如，当晶体缺少原子时）。需要新物理学来解释DMS机制。在这个提案中，我们感兴趣的是在室温下有应用潜力的氧化物（例如，用于计算机的新组件）。我们将研究近室温电化学生长的薄膜，我们发现一致产生DMS效应。事实上，电化学是一种生长这种DMS氧化物的新方法，希望通过研究这种方法制成的材料，我们将更多地了解DMS机制。