Novel X-ray/gamma-ray Detectors - Capital Equipment

新型 X 射线/伽马射线探测器 - 资本设备

• 批准号: ST/T003391/1
• 负责人: Anna Barnett
• 金额: $ 33.29万
• 依托单位: University of Sussex
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=ST%2FT003391%2F1
• 关键词: Novel; ray; gamma; Detectors; Capital

Whilst many X-ray and gamma-ray detector technologies exist (including Si, GaAs, SiC, and CdZnTe), InGaP devices are a highly attractive alternative which occupy a sweet spot in performance. They are capable of all three desirable properties: good energy resolution, high linear absorption coefficients, and high temperature operation. As such, they are a valuable commercial proposition, with many uses in multiple fields, including: nuclear power, scientific research, mining, healthcare, security and defence, and material sterilisation. InGaP radiation detectors are being developed at University of Sussex, where they are also being prepared for commercialisation. This IPS Capital application would provide funds to purchase three items of much needed equipment which will make the technical and commercial development of the detectors more rapid: 1) a semiconductor probe station - this is a piece of equipment that allows temporary electrical connections to be made to bare die semiconductor devices before they are packaged.2) a parameter analyser - this is a piece of test and measurement equipment that enables the characteristics of the detectors to be measured.3) a wire-bonder - this is a tool which allows permanent electrical connections to be made between devices on a semiconductor die and the semiconductor packaging.University of Sussex will contribute £50k in cash towards the requested equipment and also commit 20% of Barnett's time for 5 years (£207.6k including overheads and estates costs) to the development and commercialisation of the novel detectors, and to ensure that the equipment requested is properly used, managed, and maintained during and beyond the grant's lifetime.

虽然存在许多X射线和伽马射线探测器技术（包括Si、GaAs、SiC和CdZnTe），但InGaP器件是一种极具吸引力的替代品，在性能上占据了最佳位置。它们具有所有三个理想的特性：良好的能量分辨率，高线性吸收系数和高温操作。因此，它们是一个有价值的商业主张，在多个领域有许多用途，包括：核电，科学研究，采矿，医疗保健，安全和国防以及材料消毒。苏塞克斯大学正在开发InGaP辐射探测器，并准备将其商业化。IPS资本申请将提供资金购买三项急需的设备，这将使探测器的技术和商业发展更加迅速：1）半导体探针台-这是一种允许在封装裸芯片半导体器件之前对其进行临时电连接的设备。2）参数分析仪-这是一种测试和测量设备，能够测量探测器的特性。3）引线键合器，这是一种允许在半导体芯片上的器件和半导体封装之间进行永久电连接的工具。苏塞克斯大学将为该项目提供5万英镑的现金。要求的设备，并承诺巴内特的时间为5年（207.6万英镑，包括管理费用和房地产成本）的20%，以开发和商业化的新型探测器，并确保所要求的设备得到适当的使用，管理和维护期间和之后的赠款的生命周期。