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Novel X-ray/gamma-ray Detectors - Capital Equipment

Novel X-ray/gamma-ray Detectors - Capital Equipment
新型 X 射线/伽马射线探测器 - 资本设备
批准号:
ST/T003391/1
负责人:
Anna Barnett
金额:
$33.29万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2019
资助国家:
英国
项目状态:
已结题
起止时间:
2019 至 --

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中文摘要
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英文摘要
Whilst many X-ray and gamma-ray detector technologies exist (including Si, GaAs, SiC, and CdZnTe), InGaP devices are a highly attractive alternative which occupy a sweet spot in performance. They are capable of all three desirable properties: good energy resolution, high linear absorption coefficients, and high temperature operation. As such, they are a valuable commercial proposition, with many uses in multiple fields, including: nuclear power, scientific research, mining, healthcare, security and defence, and material sterilisation. InGaP radiation detectors are being developed at University of Sussex, where they are also being prepared for commercialisation. This IPS Capital application would provide funds to purchase three items of much needed equipment which will make the technical and commercial development of the detectors more rapid: 1) a semiconductor probe station - this is a piece of equipment that allows temporary electrical connections to be made to bare die semiconductor devices before they are packaged.2) a parameter analyser - this is a piece of test and measurement equipment that enables the characteristics of the detectors to be measured.3) a wire-bonder - this is a tool which allows permanent electrical connections to be made between devices on a semiconductor die and the semiconductor packaging.University of Sussex will contribute £50k in cash towards the requested equipment and also commit 20% of Barnett's time for 5 years (£207.6k including overheads and estates costs) to the development and commercialisation of the novel detectors, and to ensure that the equipment requested is properly used, managed, and maintained during and beyond the grant's lifetime.
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