High bandwidth CMOS based flow sensors. Engineering: Sensors and Instrumentation.

研究方向：工程：传感器与仪器仪表。传统的流量传感器基于热或机械MEMS器件，并且响应时间较低（几Hz）。这使得它们无法对流体流动的快速变化做出反应，例如由层流到湍流过渡或局部涡的开始引起的变化。该研究项目基于超薄膜SOI CMOS技术，开发具有更高带宽（bbb10khz）的新一代流量传感器。这个概念已经申请了专利，剑桥大学的研究人员正在申请更多的专利。新一代流量传感器将在单个ASIC芯片上集成驱动和转导电子设备。新的信号处理算法将需要和嵌入快速，本地处理。硅芯片将在SOI CMOS平台上制造，并在这里或剑桥惠特尔实验室使用风洞进行测试。

Research Areas: Engineering: Sensors and Instrumentation.Conventional flow sensors are based on either thermal or mechanical MEMS devices and suffer from low response times (few Hz). This makes them unable to respond to rapid changes in fluid flow such as caused by the onset of laminar to turbulent transition or local vortexes. The research project is based around using ultra-thin film SOI CMOS technology to develop a new generation of flow sensors with much higher bandwidths (> 10kHz). The concept has been patented and further patents are being sought with researchers at Cambridge University. A new generation of flow sensors will be developed with integrated drive and transduction electronics on a single ASIC chip. New signal processing algorithms will be needed and embedded for fast, local processing. The silicon chips will be fabricated on an SOI CMOS platform and tested using wind tunnels here or at Cambridge Whittle Laboratory.