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Development of Techniques and Algorithms for IGBT Digital Active Gate Drives

IGBT 数字有源栅极驱动技术和算法的开发

基本信息

批准号：
1798093
负责人：
金额：
--
依托单位：
University of Oxford
依托单位国家：
英国
项目类别：
Studentship
财政年份：
2016
资助国家：
英国
起止时间：
2016 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=studentship-1798093
关键词：
Development Techniques Algorithms IGBT Digital

项目摘要

This project falls within the EPSRC Energy research area, and is concerned with the development of active gate drive techniques for insulated-gate bipolar-transistors (IGBTs). Active gate drives are used to tailor the switching characteristics of power semiconductor devices. Precise control over the switching is desirable as it can be used to minimise switching losses, reduce both conducted and radiated electromagnetic interference (EMI), and enforce limits to the stresses applied to the semiconductor device.Analogue techniques underpin the active gate drives in use today. Control of energy losses, EMI, and voltage transients is more feasible if the generation of a control response is conducted in the digital domain. Indeed, a digital closed-loop control system has the potential for implementing sophisticated and flexible control and protection measures under varying operating conditions.The aim of this project is to develop a working proof-of-concept digital active gate drive for IGBTs, and to use this as a platform on which digital control techniques and optimisation routines can be explored and tested. Potential benefits of this work include the reduction of energy dissipation in power electronic converters using IGBTs, lowered heat dissipation requirements resulting in smaller, less costly converters, and a reduction in the voltage stresses applied to devices.

该项目福尔斯属于EPSRC能源研究领域，并与绝缘栅双极晶体管（IGBT）的有源栅极驱动技术的发展有关。有源栅极驱动器用于定制功率半导体器件的开关特性。对开关的精确控制是期望的，因为它可以用于最小化开关损耗，减少传导和辐射电磁干扰（EMI），并强制限制施加到半导体器件的应力。如果在数字域中进行控制响应的生成，则能量损耗、EMI和电压瞬变的控制更加可行。事实上，数字闭环控制系统具有在各种工作条件下实施复杂灵活的控制和保护措施的潜力。本项目的目的是开发一种用于IGBT的工作概念验证数字有源栅极驱动器，并将其用作数字控制技术和优化例程的平台。这项工作的潜在好处包括使用IGBT的电力电子转换器中的能量耗散的减少，降低散热要求，导致更小，成本更低的转换器，并减少施加到设备的电压应力。

项目成果

期刊论文数量（2）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Investigation of IGBT switching energy loss and peak overvoltage using digital active gate drives

DOI：
10.1109/compel.2017.8013407
发表时间：
2017-07
期刊：
2017 IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL)
影响因子：
0
作者：
Gwilym T. Jones;Daniel J. Rogers
通讯作者：
Gwilym T. Jones;Daniel J. Rogers

Active Gate Drive to Increase the Power Capacity of Hard-Switched IGBTs