Optimisation of 2D Transition Metal Dichalcogenide Materials for Printed Electronics

用于印刷电子产品的二维过渡金属二硫属化物材料的优化

• 批准号: 1811873
• 金额: --
• 依托单位: University of Manchester
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2016
• 资助国家: 英国
• 起止时间: 2016 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-1811873
• 关键词: Optimisation; 2D; Transition; Metal; Dichalcogenide

A current lack of field effect in printed electronic devices made from a film of electrochemically exfoliated 2D transition metal dichalcogenides (TMDs) has been observed. Exactly why we are seeing this lack of field effect is unknown, but a small field effect is seen when the device is built around a single flake, meaning that the effect is most likely due to the flake/flake contacts within the film. There are many possible issues regarding the flake/flake contacts, from the number density of flakes per unit area being too low and resulting in an open circuit, to surface passivation of the flakes by solvent or gas reducing the quality of the contact. During my thesis I will attempt to determine experimentally the cause of the lack of field effect, and using my new understanding, attempt to produce an ink which can be used to easily print a FET channel with good device performance.

在由电化学剥离的2D过渡金属二卤化物(TMDs)薄膜制成的印刷电子器件中，观察到了电流缺场效应。我们究竟为什么会看到这种缺场效应尚不清楚，但当设备围绕着单个薄片构建时，会看到一个小场效应，这意味着这种效果很可能是由于薄膜中的薄片/薄片接触造成的。薄片/薄片触点有许多可能的问题，从单位面积的薄片数量密度太低而导致断路，到通过溶剂或气体对薄片进行表面钝化降低了触点的质量。在我的论文中，我将尝试从实验上确定缺少场效应的原因，并使用我的新理解，尝试生产一种能够容易地打印出具有良好器件性能的FET通道的油墨。