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Solution based CVD Approach to Metal Sulfide Thin Films

Solution based CVD Approach to Metal Sulfide Thin Films
基于溶液的金属硫化物薄膜 CVD 方法
批准号:
1927626
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2017
资助国家:
英国
项目状态:
已结题
起止时间:
2017 至 --

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中文摘要
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英文摘要
In this project we will develop sustainable routes to thin film metal sulfide materials from novel precursors with equivalent or better figures of merit to existing materials. The films will be developed using a solution based chemical vapour deposition process known as aerosol assisted chemical vapour deposition (AACVD). In AACVD, precursors are transported in the aerosol and the key requirement is for the precursor to be soluble, overcoming the volatility issues with traditional CVD processes. This expands the range of precursors that can be used and the deposition of ternary/quaternary materials can be achieved by using a precursor mix in the aerosol. The rapid processing and simplicity of the AACVD equipment means that modifications to the process at an industrial scale are achievable at low cost, and the process could function in continuous production. This would produce highly functional thin films with no need for further batch post-deposition treatment.
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会议论文
DOI: 10.1021/jacs.0c10099
发表时间: 2020-11
期刊: Journal of the American Chemical Society
影响因子: 15
作者: [Kristian L Mears;Cary R. Stennett;Elina K Taskinen;C. Knapp;C. Carmalt;H. Tuononen;P. Power]
通讯作者: Kristian L Mears;Cary R. Stennett;Elina K Taskinen;C. Knapp;C. Carmalt;H. Tuononen;P. Power
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  • 项目类别:
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  • 资助金额:
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    2024
  • 负责人:
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  • 批准号:
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  • 项目类别:
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  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    HAOFEI ZHANG
  • 依托单位:
含Re、Ru先进镍基单晶高温合金中TCP相成核—生长机理的原位动态研究
  • 批准号:
    52301178
  • 项目类别:
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  • 资助金额:
    30.00万元
  • 批准年份:
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  • 负责人:
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