Optimization of ohmic contact for GaN MMIC Power Amplifier on silicon for Millimetre-wave Applications using Au Free process

使用无金工艺优化用于毫米波应用的硅上 GaN MMIC 功率放大器的欧姆接触

• 批准号: 2265856
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2265856
• 关键词: Optimization; ohmic; contact; GaN; MMIC

The aim of the proposed project is to develop a gold (Au)free based 250nm T-gate GaN on Si transistor and a power bar demonstrator operating at Ka-Band for 5G applications. The research will mainly be focused on the development of a low-loss HEMT ohmic contact using different plasma process techniques and lithography strategies, and a demonstrator power amplifier design, realised and characterised using on-chip matching techniques. The proposed research topic is of great importance to Si-based foundries and plasma processing tool manufactures, motivated by the need to accommodate a growing microwave & millimetre-wave market. Current RF GaN technology is typically Au based, meaning that Si-based foundries are unable to accommodate process due to the risk of Au contamination / diffusion into Si-based substrates, that alter key properties with catastrophic consequences. This project will be delivered using industry standard design tools, state-of-the-art fabrication tools and techniques and unique industry-based characterisation capabilities.

拟议项目的目的是开发一种基于无金（Au）的250 nm T栅GaN on Si晶体管和一种在Ka波段运行的用于5G应用的功率棒演示器。研究将主要集中在使用不同的等离子体工艺技术和光刻策略开发低损耗HEMT欧姆接触，以及使用片上匹配技术实现和表征的演示功率放大器设计。拟议的研究课题是非常重要的硅基铸造厂和等离子体加工工具制造商，需要适应不断增长的微波和毫米波市场的动机。目前的RF GaN技术通常是基于Au的，这意味着Si基铸造厂由于Au污染/扩散到Si基衬底中的风险而无法适应工艺，这会改变关键特性并带来灾难性后果。该项目将使用行业标准设计工具、最先进的制造工具和技术以及独特的行业特性分析能力交付。