Optimization of ohmic contact for GaN MMIC Power Amplifier on silicon for Millimetre-wave Applications using Au Free process

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The aim of the proposed project is to develop a gold (Au)free based 250nm T-gate GaN on Si transistor and a power bar demonstrator operating at Ka-Band for 5G applications. The research will mainly be focused on the development of a low-loss HEMT ohmic contact using different plasma process techniques and lithography strategies, and a demonstrator power amplifier design, realised and characterised using on-chip matching techniques. The proposed research topic is of great importance to Si-based foundries and plasma processing tool manufactures, motivated by the need to accommodate a growing microwave & millimetre-wave market. Current RF GaN technology is typically Au based, meaning that Si-based foundries are unable to accommodate process due to the risk of Au contamination / diffusion into Si-based substrates, that alter key properties with catastrophic consequences. This project will be delivered using industry standard design tools, state-of-the-art fabrication tools and techniques and unique industry-based characterisation capabilities.