III-V on insulator by tunnel epitaxy for silicon photonics

通过硅光子隧道外延在绝缘体上实现 III-V 族

• 批准号: 2268016
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2268016
• 关键词: III; insulator; tunnel; epitaxy; silicon

As the world becomes increasingly digitalised, global internet traffic has tripled since 2015, and is expected to further double by 2022. The transmission and data capacity of state-of-the-art telecommunications infrastructure must expand rapidly to sustain high levels of performance. At present, silicon photonics is under extensive investigation to resolve the bottleneck in data communications. However, despite the wonderful electronic and waveguide properties, silicon cannot interact with light efficiently. In contrast to group-IV semiconductors, most of III-V compound semiconductors have direct bandgaps with excellent photon absorption and emission efficiency. Growing III-V materials on silicon therefore offers a simple, low-cost and high-throughput path towards all optical components integrated on the same platform. This project attempts to develop a material platform by metal-organic chemical vapor deposition (MOCVD) to support the intimate integration of III-V optoelectronic devices with silicon and insulator structures. Advanced geometrically defined techniques such as tunnel epitaxy will be investigated to overcome the materials mismatch without requesting complex buffer designs. Through collaboration with academic and industrial partners (University of Southampton, Rockley Photonics), the student will explore material and device interactive design and optimisation beyond conventional heteroepitaxy era.

随着世界变得越来越数字化，全球互联网流量自2015年以来增长了两倍，预计到2022年将进一步翻一番。最先进的电信基础设施的传输和数据容量必须迅速扩展，以维持高水平的性能。目前，为了解决数据通信中的瓶颈问题，硅光子学正在进行广泛的研究。然而，尽管硅具有极好的电子和波导性，但它不能与光有效地相互作用。与IV族半导体相比，大多数III-V族化合物半导体具有直接带隙，具有优异的光子吸收和发射效率。因此，在硅上生长III-V材料为在同一平台上集成所有光学元件提供了一条简单、低成本和高通量的途径。该项目试图通过金属-有机化学气相沉积(MOCVD)开发一个材料平台，以支持III-V光电器件与硅和绝缘体结构的紧密集成。先进的几何定义技术，如隧道外延，将被研究以克服材料不匹配，而不需要复杂的缓冲器设计。通过与学术和工业合作伙伴(南安普顿大学、罗克利光子学公司)的合作，学生将探索超越传统异质外延时代的材料和设备交互设计和优化。