2D Materials on Compound Semiconductors

原子级薄的固有2D半导体为超低功耗应用提供了具有出色光响应的纳米级器件。使用剥离的微片，器件和简单的集成电路已被报道，支持在纳米光电子学的潜在应用。探索新的器件功能沿着材料规模的扩大是下一个挑战;直到最近，研究人员才开始解决这些材料集成到化合物半导体（CS）平台中的问题。全世界只有不到20个实验室配备了使用分子束外延（MBE）或原子层沉积（ALD）“生长”单层2D材料的设备。有能力解决混合2D/CS异质结构的人要少得多，这为学术探索和工业开发提供了机会。因此，新成立的卡迪夫分子束外延设施，设备齐全的Ser-Cymru实验室由牛津ALD支持，为这个CASE Studentship.Project目标和方法提供了一个国际独特的设置：这个学生将开发，分析和模拟一个选择的二维材料（MoS 2，WS 2和WSe 2）集成到GaN平台的光电应用。她/他将学习/开发新的方法，包括使用ALD（牛津），简单的剥离/转移方法（卡迪夫）的二维沉积沿着与混合异质结构组成的二维/（InAl）GaN合金（MBE）注意到，二硫化钼是晶格匹配的In0.15Ga0.85N。这些新异质结构的分析包括研究到晶片级的x射线衍射、光致发光、时间分辨光致发光沿着与拉曼，并得到能带结构模拟的支持。学生还将探索PHYSX-CMP和ENGIN材料网络中的机会，以获得免费的表征方法和合作。科学卓越性和成果：通过ALD在III-V系统上生产高度结晶的2D层的挑战预计将导致科学突破，包括在中等工艺温度下的单层2D晶体，然后控制2D/III-N合金，界面和异质结构中的基础物理。预期成果包括适合于未来规模扩大的示范和分析，导致继续卡迪夫-牛津合作，如EPSRC“冒险制造”提案（投标中）。

Atomically-thin, inherently 2D semiconductors offer nano-scale devices with excellent response to light for ultra-low-power applications. Using exfoliated microflakes, devices and simple integrated circuits have been reported, underpinning potential applications in nano-optoelectronics. Exploring new device functionality along with materials scale-up are the next challenges; only recently have researchers started to address the integration of these materials into the compound semiconductor (CS) platform. Fewer than twenty labs world-wide are equipped to "grow" single-monolayer 2D materials using molecular beam epitaxy (MBE) or atomic layer deposition (ALD). Significantly fewer have the ability to address the hybrid 2D/CS heterostructure which provides an opportunity for academic exploration and industrial exploitation. Thus, the newly-established Cardiff MBE facility, the well-equipped Ser-Cymru Laboratory supported by Oxford ALD provide an internationally unique setting for this CASE Studentship.Project aims and methods: This student will develop, analyse and simulate a select family of 2D materials (MoS2, WS2 and WSe2) integrated into the GaN platform for optoelectronic applications. She/he will learn/develop new methods to include 2D deposition using both ALD (Oxford), simple exfoliation/transfer methods (Cardiff) along with hybrid heterostructures comprised of 2D/(InAl)GaN alloys (MBE) noting that MoS2 is lattice-matched to In0.15Ga0.85N. Analysis of these new heterostructures includes research-to-wafer-scale xray diffraction, photoluminescence, time-resolved-photoluminescence along with Raman, and supported by band structure simulation. The student will also explore opportunities within PHYSX-CMP and ENGIN Materials Network for complimentary characterization methods and collaborations. Scientific excellence and outcomes: The challenge of producing highly-crystalline 2D layers via ALD on III-V systems is expected to result in scientific breakthroughs including single-monolayer 2D crystals at moderate process temperatures followed by control of the underlying physics in 2D/III-N alloys, interfaces and heterostructures. Anticipated outcomes include the demonstration and analysis appropriate for future scale-up leading to continued Cardiff-Oxford collaborations such as the EPSRC "Adventurous Manufacturing" Proposal (bid-in-progress).