Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD) February 16-19, 2015, The Wild Dunes, Isle of Palms, South Carolina (near Charleston)

化合物半导体材料研讨会

• 批准号: 1521357
• 负责人: Alexandre Freundlich
• 金额: $ 1万
• 依托单位: University of Houston
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-04-01 至 2015-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1521357&HistoricalAwards=false
• 关键词: Workshop; Compound; Semiconductor; Materials; &amp

The 2015 Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD) will address research areas in III-V compound semiconductor field. SiC and GaN device concepts for high power switches and demonstration of high power switching capability with superior properties, as well as new processing and materials possibilities will be major areas on which the Workshop will focus. It is one of the few workshop format meetings where the latest results can be debated and discussed in a relatively open format. WOCSEMMAD has played a key role in identifying new directions for research. The workshop will be held February 16-19, 2015 at Wild Dunes, Isle of Palms, South Carolina and the project will support student participation. WOCSEMMAD's broader impact will be on the design and development of novel new devices and materials. Along with these new materials and devices, new industries and jobs will be created with lasting impact on science and economy.

2015年化合物半导体材料器件研讨会（WOCSEMMAD）将讨论III-V族化合物半导体领域的研究领域。用于高功率开关的SiC和GaN器件概念和具有上级性能的高功率开关能力的演示，以及新工艺和材料的可能性将是研讨会的重点领域。这是为数不多的讲习班形式的会议之一，可以以相对开放的形式辩论和讨论最新成果。WOCSEMMAD在确定新的研究方向方面发挥了关键作用。该研讨会将于2015年2月16日至19日在野生沙丘，棕榈岛，南卡罗来纳州和该项目将支持学生参与。WOCSEMMAD的更广泛的影响将是设计和开发新颖的新设备和材料。沿着这些新材料和新器件，将创造新的产业和就业机会，对科学和经济产生持久的影响。