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Beyond the Gate: A Multidisciplinary Approach for Reconstructing the Lived Experience of Medieval Leprosy Sufferers

Beyond the Gate: A Multidisciplinary Approach for Reconstructing the Lived Experience of Medieval Leprosy Sufferers
超越大门:重建中世纪麻风病患者生活经历的多学科方法
批准号:
2274386
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金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2019
资助国家:
英国
项目状态:
已结题
起止时间:
2019 至 --

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英文摘要
Were leprosy sufferers truly shunned to the edge of society or were leprosaria a site of charitable, humane care? At present, our knowledge surrounding the experience of having the disease in the medieval period is heavily reliant on historical sources, which are quite generalised and overly negative. In some countries, historical records have shown leprosaria to uphold selection criteria based on status and sex, with voluntary admission. Since detailed records about leprosaria patients are limited for medieval England, other effective means to assess variation in life experience during this period are needed. This study will take a multidisciplinary approach to analyse the differences in biological markers between individuals from various leprosaria and parish cemeteries from Anglo-Saxon to medieval times. Osteoarchaeological analyses can provide estimations of age-at-death, sex, stature and pathology, whereas isotopic data can hint towards varying dietary and status patterns. Additionally, aDNA can confirm leprosy infection independent of skeletal expression. The obtained data will allow for a population-level approach, as well as reconstruction of individual life histories through their osteobiography. This combination of evidence can be used to provide insight into the social treatment and life experiences of those infected, and can scrutinize our modern beliefs concerning social stigmatization of lepers in medieval times.
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面向无人机应用的增强型p-gate AlGaN/GaN HEMT高功率微波辐射效应及 机理研究
二次外延势垒层的新型p-gate GaN HEMT器件栅极可靠性研究
直接带隙In2Se3、GaTe纳米片/MoS2复合薄膜的制备及饱和吸收性能的研究
  • 批准号:
    2020A151501861
  • 项目类别:
    省市级项目
  • 资助金额:
    10.0万元
  • 批准年份:
    2020
  • 负责人:
    龙慧
  • 依托单位:
二次外延AlGaN势垒层的增强型p-gate GaN HEMT新结构研究