Quantum Properties of Semicondutor Nanostructures

半导体纳米结构的量子特性

• 批准号: 2401959
• 金额: --
• 依托单位: University College London
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2401959
• 关键词: Quantum; Properties; Semicondutor; Nanostructures

The project is based around experimental investigations of electron transport in specifically designed Semiconductor Nanostructures, it will be necessary for the successful candidate to develop a good understanding of Quantum Mechanics as applied in the solid state. The appropriate samples will be designed and fabricated by the Student followed by measurements at low temperatures. New aspects of the physics of the devices will include electrons behaving as if possessing a fractional charge, how electron spins become polarised due to strong confinement when behaviour is one-dimensional and the manipulation of electron wavefunctions by both confining electric fields and the interaction of the spins with the lattice field. The new physical behaviour which will be obtained is not just of importance for basic physics but also points the way to new schemes of Topological Quantum Computation, the principles of which will be explored in the project.

该项目是基于电子传输在专门设计的半导体纳米结构的实验研究，这将是必要的成功的候选人发展量子力学的良好理解，应用在固态。学生将设计和制造适当的样品，然后在低温下进行测量。新的方面的物理设备将包括电子的行为，如果拥有一个分数电荷，如何电子自旋成为极化由于强约束时，行为是一维和操纵电子波函数的约束电场和相互作用的自旋与晶格场。将获得的新物理行为不仅对基础物理学具有重要意义，而且还为拓扑量子计算的新方案指明了方向，该方案的原理将在该项目中进行探索。